U2D-M3 [VISHAY]
Surface Mount Ultrafast Plastic Rectifier;
| 型号： | U2D-M3 |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Ultrafast Plastic Rectifier |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2B-M3, U2C-M3, U2D-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters or
polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
IFSM
100 V, 150 V, 200 V
50 A
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
trr
20 ns
Base P/N-M3 - RoHS-compliant, commercial grade
VF at IF = 2.0 A
TJ max.
0.76 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
150 °C
Package
Diode variations
DO-214AA (SMB)
Single die
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U2B
U2B
100
U2C
U2C
150
2.0
U2D
U2D
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 23-Oct-13
Document Number: 89929
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
U2B-M3, U2C-M3, U2D-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.86
0.76
-
MAX.
0.90
0.83
10
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 2 A
VF
V
TA = 100 °C
TA = 25 °C
TA = 100 °C
(2)
Reverse current
Rated VR
IR
μA
ns
180
350
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
TA = 25 °C
-
20
l
Reverse recovery time
trr
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
27
35
9
-
-
-
-
-
IF = 2.0 A, dI/dt = 50 A/μs,
R = 30 V, lrr = 0.1 IRM
V
IF = 2.0 A, dI/dt = 50 A/μs,
R = 30 V, lrr = 0.1 IRM
Storage charge
Qrr
CJ
nC
pF
V
19
16
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U2B
U2C
U2D
UNIT
(1)
RJA
105
18
Typical thermal resistance
°C/W
(1)
RJM
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
U2D-M3/52T
0.099
0.099
52T
5BT
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
U2D-M3/5BT
3200
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
2.0
1.0
0
2.0
1.6
1.2
0.8
0.4
0
D = 0.8
Resistive or Inductive Load
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = tp/T
tp
2.0
80
90
100
110
120
130
140
150
0
0.4
0.8
1.2
1.6
2.4
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Oct-13
Document Number: 89929
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
U2B-M3, U2C-M3, U2D-M3
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
1
10
TA = 100 °C
TA = 125 °C
0.1
TA = 25 °C
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
10
Junction to Ambient
TA = 150 °C
TA = 125 °C
1000
100
10
TA = 100 °C
TA = 25 °C
1
0.1
1
10
20
30
40
50
60
70
80
90 100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 23-Oct-13
Document Number: 89929
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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