UFB120FA20P_10 [VISHAY]
Insulated Ultrafast Rectifier Module, 120 A; 绝缘超快整流器模块， 120一
| 型号： | UFB120FA20P_10 |
| 厂家： | 
VISHAY |
| 描述： | Insulated Ultrafast Rectifier Module, 120 A |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(VISOL = 2500 VAC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
The UFB120FA20P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
VR
200 V
120 A
28 ns
IF(AV) at TC = 90 °C
trr
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
200
UNITS
Cathode to anode voltage
V
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
IF
TC = 90 °C
60
A
IFSM
TC = 25 °C
850
PD
TC = 90 °C
110
W
V
VISOL
TJ, TStg
Any terminal to case, t = 1 min
2500
- 55 to 150
Operating junction and storage temperatures
°C
Document Number: 94522
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Cathode to anode breakdown voltage
VBR
IR = 100 μA
IF = 60 A
200
-
-
-
-
-
0.96
0.79
-
1.13
0.90
100
1.0
-
V
Forward voltage
VFM
IF = 60 A, TJ = 150 °C
VR = VR rated
μA
mA
pF
Reverse leakage current
Junction capacitance
IRM
CT
TJ = 150 °C, VR = VR rated
VR = 200 V
-
105
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
28
-
Reverse recovery time
trr
32
ns
TJ = 125 °C
64
-
IF = 50 A
TJ = 25 °C
4.0
8.2
64
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
VR = 100 V
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
Reverse recovery charge
Qrr
nC
263
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Junction to case,
single diode conducting
-
0.8
1.1
RthJC
Junction to case,
both diodes conducting
K/W
-
0.4
0.55
Case to heatsink
Weight
RthCS
Flat, greased surface
-
-
-
0.05
30
-
-
-
g
Mounting torque
1.3
Nm
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94522
Revision: 21-Jul-10
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
100
10
1000
100
10
Tj = 150˚C
125˚C
1
0.1
25˚C
0.01
0.001
0
50
100
150
200
ReverseVoltage-VR(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
1000
Tj = 25˚C
1
100
0.2
0.6
1
1.4
1.8
1
10
100
1000
ForwardVoltageDrop-VFM (V)
ReverseVoltage-VR(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Single Pulse
1
(Thermal Impedance)
P
DM
t
1
t
0.1
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.001
0.01
0.1
1
10
t1,Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC (Per Diode)
Document Number: 94522
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
80
If = 50A
150
140
130
Vrr = 200V
70
60
50
40
30
20
10
0
Tj = 125˚C
DC
120
Tj = 25˚C
110
Square wave (D = 0.50)
80% Rated Vr applied
100
90
see note (1)
80
0
10 20 30 40 50 60 70
Average Forward Current - IF(AV)(A)
100
1000
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Diode)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
800
If = 50A
Vrr = 200V
60
700
600
500
400
300
200
100
0
RMS Limit
50
40
Tj = 125˚C
DC
30
20
10
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Tj = 25˚C
0
10 20 30 40 50 60 70
Average Forward Current - IF(AV)(A)
100
1000
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss (Per Diode)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94522
Revision: 21-Jul-10
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94522
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ORDERING INFORMATION TABLE
Device code
UF
B
120
F
A
20
P
1
2
3
4
5
6
7
1
-
-
-
-
-
-
-
Ultrafast rectifier
2
3
4
5
6
7
Ultrafast Pt diffused
Current rating (120 = 120 A)
Circuit configuration (2 separate diodes, parallel pin-out)
Package indicator (SOT-227 standard isolated base)
Voltage rating (20 = 200 V)
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1
4
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94522
Revision: 21-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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