UFH60GA60P [VISHAY]
Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A; 串联绝缘SOT- 227电源模块超高速整流器， 60 A
| 型号： | UFH60GA60P |
| 厂家： | 
VISHAY |
| 描述： | Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(VISOL = 2500 VAC
)
• Hyperfast reverse recovery
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
SOT-227
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFH60GA60P insulated modules integrate two state of
the art Vishay hyperfast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control,
provide an ultrasoft recovery current shape, together with
the best overall performance, ruggedness, and reliability
characteristics.
PRODUCT SUMMARY
VR
600 V
60 A
I
F(AV) per module at TC = 126 °C
trr
39 ns
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be a predominant portion of the total energy, such as in
the output rectification stage of welding machines, SMPS,
and dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
600
UNITS
Cathode to anode voltage
V
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
IF
TC = 85 °C
56
A
IFSM
TC = 25 °C
200
PD
TC = 85 °C
230
W
V
VISOL
TJ, TStg
Any terminal to case, t = 1 min
2500
- 55 to 175
Operating junction and storage temperatures
°C
Document Number: 94663
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Cathode to anode breakdown voltage
VBR
IR = 100 μA
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
600
-
-
-
-
-
-
-
2.08
2.36
1.79
2.1
3.8
4.78
1.92
2.42
75
V
Forward voltage
VFM
TJ = 125 °C
VR = VR rated
0.03
0.1
μA
mA
pF
Reverse leakage current
Junction capacitance
IRM
CT
TJ = 175 °C, VR = VR rated
VR = 600 V
1.0
-
33
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
39
66
3
MAX.
80
UNITS
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
-
-
-
-
Reverse recovery time
trr
ns
110
7
IF = 30 A
Peak recovery current
IRRM
dIF/dt = 200 A/μs
VR = 200 V
A
7
11
58
235
280
605
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Junction to case,
single leg conducting
-
-
0.78
RthJC
Junction to case,
both leg conducting
°C/W
-
-
0.39
Case to heatsink per module
Weight
RthCS
Flat, greased surface
-
-
-
0.05
30
-
-
-
g
Mounting torque
1.3
N · m
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94663
Revision: 22-Jul-10
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
1000
100
10
1000
TJ = 175 °C
100
10
TJ = 125 °C
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.01
TJ = 25 °C
1
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
94663_01
94663_02
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
10
100
1000
94663_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
0.1
1
10
94663_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94663
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
180
160
140
90
80
70
60
50
40
IF = 30 A
VR = 200 V
TJ = 125 °C
120
DC
100
80
60
TJ = 25 °C
30
20
10
0
Square wave (D = 0.50)
Rated VR applied
40
20
0
See note (1)
0
20
40
60
80
100
100
1000
94663_05
IF(AV) - Average Forward Current (A)
94663_07
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
90
500
450
400
350
300
250
200
150
100
50
IF = 30 A
VR = 200 V
80
70
60
50
40
30
20
10
0
TJ = 125 °C
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
TJ = 25 °C
DC
20
0
0
10
30
40
50
100
1000
94663_06
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
94663_08
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
20
IF = 30 A
VR = 200 V
TJ = 125 °C
15
10
5
TJ = 25 °C
0
100
1000
94663_09
dIF/dt (A/µs)
Fig. 9 - Typical Stored Current vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94663
Revision: 22-Jul-10
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Document Number: 94663
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
ORDERING INFORMATION TABLE
Device code
UF
H
60
G
A
60
P
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Ultrafast rectifier
Hyperfast rectifier
Current rating (60 = 60 A)
Circuit configuration (2 separate diodes, tandem configuration)
Package indicator (SOT-227 standard isolated base)
Voltage rating (60 = 600 V)
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1
2
4
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94663
Revision: 22-Jul-10
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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