UFL120FA60P_10 [VISHAY]

Insulated Ultrafast Rectifier Module, 120 A; 绝缘超快整流器模块, 120一
UFL120FA60P_10
型号: UFL120FA60P_10
厂家: VISHAY    VISHAY
描述:

Insulated Ultrafast Rectifier Module, 120 A
绝缘超快整流器模块, 120一

文件: 总7页 (文件大小:134K)
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UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast Rectifier Module, 120 A  
FEATURES  
• Two fully independent diodes  
• Ceramic fully insulated package  
(VISOL = 2500 VAC  
)
• Ultrafast reverse recovery  
• Ultrasoft reverse recovery current shape  
• Low forward voltage  
SOT-227  
• Optimized for power conversion: welding and industrial  
SMPS applications  
• Industry standard outline  
• Plug-in compatible with other SOT-227 packages  
• Easy to assemble  
• Direct mounting to heatsink  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The UFL120FA60P insulated modules integrate two state of  
the art Vishay Semiconductors ultrafast recovery rectifiers in  
the compact, industry standard SOT-227 package. The  
planar structure of the diodes, and the platinum doping life  
time control, provide an ultrasoft recovery current shape,  
together with the best overall performance, ruggedness,  
and reliability characteristics.  
VR  
600 V  
120 A  
96 ns  
IF(AV) per module at TC = 80 °C  
trr  
These devices are thus intended for high frequency  
applications in which the switching energy is designed not  
to be a predominant portion of the total energy, such as in  
the output rectification stage of welding machines, SMPS,  
and dc-to-dc converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
TC = 85 °C  
69  
A
IFSM  
TC = 25 °C  
750  
PD  
TC = 85 °C  
180  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 min  
2500  
- 55 to 175  
Operating junction and storage temperatures  
°C  
Document Number: 94568  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast  
Rectifier Module, 120 A  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
-
UNITS  
Cathode to anode breakdown voltage  
VBR  
IR = 100 μA  
IF = 60 A  
600  
-
-
-
-
-
-
-
1.29  
1.49  
1.13  
1.37  
0.1  
1.60  
1.88  
1.35  
1.68  
100  
1.0  
IF = 120 A  
IF = 60 A  
V
Forward voltage  
VFM  
TJ = 125 °C  
IF = 120 A  
VR = VR rated  
μA  
mA  
pF  
Reverse leakage current  
Junction capacitance  
IRM  
CT  
TJ = 175 °C, VR = VR rated  
VR = 600 V  
0.2  
80  
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
96  
MAX.  
141  
246  
13  
UNITS  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
-
-
-
-
-
-
Reverse recovery time  
trr  
ns  
190  
7
IF = 50 A  
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
VR = 200 V  
A
17  
25  
340  
1581  
917  
3075  
Reverse recovery charge  
Qrr  
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Junction to case,  
single leg conducting  
-
-
1.0  
RthJC  
Junction to case,  
both leg conducting  
°C/W  
-
-
0.5  
Case to heatsink  
Weight  
RthCS  
Flat, greased surface  
-
-
-
0.05  
30  
-
-
-
g
Mounting torque  
1.3  
N · m  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94568  
Revision: 22-Jul-10  
UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast  
Rectifier Module, 120 A  
1000  
100  
10  
1000  
100  
10  
175°C  
125°C  
1
0.1  
25°C  
0.01  
0.001  
100  
200  
300  
400  
500  
600  
Tj = 175°C  
Reverse Voltage-VR (V)  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
1000  
Tj = 125°C  
100  
10  
Tj = 25°C  
1
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
10  
100  
1000  
Forward Voltage Drop-VF (V)  
Reverse Voltage-VR (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
(Per Diode)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
D = 0.75  
1
0.1  
D = 0.5  
D = 0.33  
D = 0.25  
D = 0.2  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-03  
1E-02  
1E-01  
1E+00  
t 1, Rectangular Pulse Duration (Seconds)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)  
Document Number: 94568  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast  
Rectifier Module, 120 A  
250  
200  
150  
100  
50  
Vr = 200V  
200  
150  
100  
If = 50A, 125°C  
DC  
50  
0
Square wave (D=0.50)  
80% rated Vr applied  
If = 50A, 25°C  
see note 1  
0
20  
40  
60  
80  
100 120  
Average Forward Current - IF(AV) (A)  
100  
1000  
dIF /dt (A/μs)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current (Per Leg)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
3000  
Vr = 200V  
120  
100  
2500  
If = 50A, 125°C  
2000  
1500  
1000  
500  
0
DC  
80  
RMS Limit  
60  
D = 0.2  
D = 0.25  
D = 0.33  
D = 0.5  
40  
20  
0
D = 0.75  
If = 50A, 25°C  
0
30  
60  
90  
Average Forward Current - IF(AV) (A)  
100  
1000  
dIF/dt (A/μs)  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Fig. 6 - Forward Power Loss Characteristics (Per Leg)  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94568  
Revision: 22-Jul-10  
UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast  
Rectifier Module, 120 A  
35  
Vr = 200V  
30  
25  
20  
15  
10  
5
If = 50A, 125°C  
If = 50A, 25°C  
0
100  
1000  
dIF/dt (A/μs)  
Fig. 9 - Typical Stored Current vs. dIF/dt  
VR = 200 V  
0.01 Ω  
L = 70 μH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit  
Document Number: 94568  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
UFL120FA60P  
Vishay Semiconductors  
Insulated Ultrafast  
Rectifier Module, 120 A  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 11 - Reverse Recovery Waveform and Definitions  
ORDERING INFORMATION TABLE  
Device code  
UF  
L
120  
F
A
60  
P
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Ultrafast rectifier  
Ultrafast Pt low VF  
Current rating (120 = 120 A)  
Circuit configuration (2 separate diodes, parallel pin-out)  
Package indicator (SOT-227 standard isolated base)  
Voltage rating (60 = 600 V)  
P = Lead (Pb)-free  
CIRCUIT CONFIGURATION  
1
4
2
3
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95036  
www.vishay.com/doc?95037  
Packaging information  
www.vishay.com  
6
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94568  
Revision: 22-Jul-10  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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