UG8DT-DT [VISHAY]

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UG8DT-DT
型号: UG8DT-DT
厂家: VISHAY    VISHAY
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UG8AT THRU UG8DT  
ULTRAFAST EFFICIENT PLASTIC RECTIFIER  
Reverse Voltage - 50 to 200 Volts  
Forward Current - 8.0 Amperes  
FEATURES  
TO-220AC  
Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
Ideally suited for use in very high frequency  
switching power supplies, inverters and as a free  
wheeling diode  
0.185 (4.70)  
0.415 (10.54) MAX.  
0.175 (4.44)  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
0.055 (1.39)  
0.045 (1.14)  
DIA.  
0.113 (2.87)  
0.103 (2.62)  
0.145 (3.68)  
0.135 (3.43)  
Ultrafast reverse  
recovery time for high efficiency  
0.560 (14.22)  
0.530 (13.46)  
Soft recovery characteristics  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
Excellent high temperature switching  
Glass passivated chip junction  
High temperature soldering guaranteed:  
250°C, 0.16” (4.06) from case for 10 seconds  
0.625 (15.87)  
1.148 (29.16)  
1.118 (28.40)  
PIN  
1
2
0.110 (2.79)  
0.100 (2.54)  
0.160 (4.06)  
0.140 (3.56)  
0.560 (14.22)  
0.530 (13.46)  
MECHANICAL DATA  
Case: JEDEC TO-220AC molded plastic body over  
passivated chip  
0.105 (2.67)  
0.095 (2.41)  
0.037 (0.94)  
0.027 (0.68)  
0.022 (0.56)  
0.014 (0.36)  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: As marked  
PIN 1  
PIN 2  
0.205 (5.20)  
0.195 (4.95)  
CASE  
Mounting Position: Any  
Mounting Torque: 5in. - lbs. max.  
Weight: 0.064 ounce, 1.81 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRMS  
VDC  
UG8AT  
50  
UG8BT  
100  
70  
UG8CT  
150  
UG8DT  
200  
UNITS  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
35  
105  
140  
Maximum DC blocking voltage  
50  
100  
150  
200  
Maximum average forward rectified current  
at TC=100°C  
I(AV)  
8.0  
Amps  
Peak forward surge current  
8.3 ms single half sine-wave superimposed  
on rated load (JEDEC Method) at TC=100°C  
IFSM  
150.0  
Amps  
Maximum instantaneous forward voltage at 8.0  
20A  
1.00  
1.20  
0.95  
VF  
Volts  
5.0A, TJ=150°C  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
10.0  
IR  
trr  
trr  
µA  
ns  
ns  
TA=100°C  
300.0  
Maximum reverse recovery time (NOTE 1)  
20.0  
Maximum reverse recovery time  
(NOTE 2)  
TJ=25°C  
TJ=100°C  
30.0  
50.0  
Maximum recovered stored charge  
(NOTE 2)  
TJ=25°C  
TJ=100°C  
20.0  
45.0  
Qrr  
nC  
Typical junction capacitance (NOTE 3)  
Typical thermal resistance (NOTE 4)  
CJ  
45.0  
4.0  
pF  
°C/W  
°C  
RΘJC  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to+150  
NOTES:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(2) trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr  
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts  
(4) Thermal resistance from junction to case  
10/23/98  
RATINGS AND CHARACTERISTIC CURVES UG8AT THRU UG8DT  
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
FIG. 1 - FORWARD CURRENT DERATING  
CURVE  
12  
10  
1,000  
100  
10  
RESISTIVE OR INDUCTIVE LOAD  
T =100°C  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
C
8.0  
6.0  
4.0  
2.0  
0
0
25  
50  
75  
100 125 150 175  
CASE TEMPERATURE, °C  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG. 4 - TYPICAL REVERSE  
CHARACTERISTICS  
100  
10  
1
1,000  
100  
10  
T =125°C  
J
T =25°C  
J
PULSE WIDTH=300µs  
1% DUTY CYCLE  
T =100°C  
J
1
T =25°C  
J
0.1  
0.1  
0.01  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
PERCENT OF RATED PEAK REVERSE  
VOLTAGE, %  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
FIG. 5 - REVERSE SWITCHING  
CHARACTERISTICS  
FIG. 6 - TYPICAL JUNCTION CAPACITANCE  
60  
50  
40  
30  
20  
10  
0
100  
10  
I =4.0A  
V =30V  
R
F
di/dt= 150A/µs  
di/dt=100A/µs  
T =25°C  
J
f=1.0 MH  
Vsig=50mVp-p  
Z
di/dt=20A/µs  
di/dt=50A/µs  
di/dt=100A/µs  
di/dt=50A/µs  
di/dt=150A/µs  
1
di/dt=20A/µs  
t
Q
rr  
rr  
0.1  
0.01  
0.1  
1
10  
100  
0
25  
50  
75  
100 125 150 175  
REVERSE VOLTAGE, VOLTS  
JUNCTION TEMPERATURE, °C  

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