UGB0CCT [VISHAY]

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode;
UGB0CCT
型号: UGB0CCT
厂家: VISHAY    VISHAY
描述:

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode

超快软恢复二极管 快速软恢复二极管
文件: 总4页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series  
Vishay Semiconductors  
formerly General Semiconductor  
Dual Ultrafast Soft Recovery Rectifiers  
Reverse Voltage 100 to 200 V  
Forward Current 10 A  
Reverse Recovery Time 20ns  
ITO-220AB (BYQ28EF, UGF10 Series)  
0.188 (4.77)  
0.405 (10.27)  
0.172 (4.36)  
0.383 (9.72)  
0.110 (2.80)  
0.100 (2.54)  
0.131 (3.39)  
0.122 (3.08)  
0.140 (3.56)  
0.130 (3.30)  
DIA.  
DIA.  
TO-220AB (BYQ28E, UG10 Series)  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.676 (17.2)  
0.646 (16.4)  
0.600 (15.5)  
0.580 (14.5)  
0.154 (3.91)  
0.350 (8.89)  
0.330 (8.38)  
0.370 (9.40)  
0.148 (3.74)  
0.055 (1.39)  
0.045 (1.14)  
0.360 (9.14)  
PIN  
2
0.113 (2.87)  
0.103 (2.62)  
3
1
0.145 (3.68)  
0.135 (3.43)  
0.191 (4.85)  
0.171 (4.35)  
0.603 (15.32)  
0.573 (14.55)  
0.110 (2.80)  
0.100 (2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.410 (10.41)  
0.390 (9.91)  
0.060 (1.52)  
PIN 1  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN 2  
PIN  
2
1
3
1.148 (29.16)  
1.118 (28.40)  
PIN 3  
0.160 (4.06)  
0.140 (3.56)  
0.037 (0.94)  
0.027 (0.69)  
0.110 (2.79)  
0.100 (2.54)  
0.022 (0.55)  
0.014 (0.36)  
0.105 (2.67)  
0.095 (2.41)  
0.560 (14.22)  
PIN 1  
PIN 3  
0.205 (5.20)  
0.195 (4.95)  
PIN 2  
CASE  
0.530 (13.46)  
Dimensions in inches  
and (millimeters)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.90)  
0.028 (0.70)  
TO-263AB (BYQ28EB, UGB10 Series)  
0.022 (0.56)  
0.014 (0.36)  
0.104 (2.65)  
0.096 (2.45)  
0.411 (10.45)  
0.380 (9.65)  
0.190 (4.83)  
0.160 (4.06)  
0.205 (5.20)  
0.195 (4.95)  
0.055 (1.40)  
0.045 (1.14)  
0.245 (6.22)  
MIN  
0.42  
(10.66)  
K
Mounting Pad  
Layout  
TO-263AB  
0.055 (1.40)  
0.047 (1.19)  
0.33  
(8.38)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.591 (15.00)  
K
1
2
0.63  
(17.02)  
0-0.01 (0-0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.037 (0.940)  
0.027 (0.686)  
0.021 (0.53)  
0.014 (0.36)  
PIN 1  
PIN 2  
K - HEATSINK  
0.08  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
(2.032)  
0.12  
(3.05)  
0.205 (5.20)  
0.195 (4.95)  
0.24  
(6.096)  
Features  
Mechanical Data  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High reverse energy capability  
• Excellent high temperature switching  
• High temperature soldering guaranteed: 250°C/10  
seconds at terminals  
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB  
molded plastic body  
Terminals: Plated leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 oz., 2.24 g  
• Glass passivated chip junction  
• Soft recovery characteristics  
Document Number 88549  
27-Jun-03  
www.vishay.com  
1
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series  
Vishay Semiconductors  
formerly General Semiconductor  
Maximum Ratings (TC = 25°C unless otherwise noted)  
Parameter  
UG10BCT  
UG10CCT  
UG10DCT  
Symbol  
VRRM  
VRWM  
VDC  
BYQ28E-100 BYQ28E-150 BYQ28E-200  
Unit  
V
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
100  
100  
100  
150  
150  
150  
200  
200  
200  
V
Maximum DC blocking voltage  
V
Maximum average forward rectified current Total device  
10  
5
IF(AV)  
IFSM  
IRSM  
A
A
A
at TC = 100°C  
Per leg  
Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) per leg  
55  
Non-repetitive peak reverse current per leg  
at tp= 100µs  
0.2  
Electrostatic discharge capacitor voltage,  
Human body model: C = 250pF, R = 1.5kΩ  
VC  
8
KV  
Operating junction and storage temperature range  
TJ, TSTG  
40 to +150  
°C  
RMS Isolation voltage (BYQ28EF, UGF types)  
from terminals to heatsink with t = 1 second, RH 30%  
4500 (NOTE 1)  
3500 (NOTE 2)  
1500 (NOTE 3)  
VISOL  
V
Electrical Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Maximum instantaneous forward voltage per leg (Note 4)  
at IF = 10A,  
at IF = 5A,  
at IF = 5A,  
TJ = 25°C  
TJ = 25°C  
TJ = 150°C  
1.25  
1.10  
0.895  
VF  
V
Maximum reverse current per leg  
at working peak reverse voltage (Note 4) TJ = 100°C  
TJ = 25°C  
10  
200  
IR  
trr  
µA  
ns  
Maximum reverse recovery time per leg at  
IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1IRM  
25  
20  
9
Maximum reverse recovery time per leg at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
trr  
ns  
Maximum stored charge per leg  
IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1IRM  
Qrr  
nC  
Thermal Characteristics(TC = 25°C unless otherwise noted)  
UG10  
UGF10  
UGB10  
Parameter  
Symbol  
BYQ28E  
BYQ28EF  
BYQ28EB  
Unit  
Typical thermal resistance junction to ambient  
RθJA  
RθJC  
50  
4.5  
55  
6.7  
50  
4.5  
°C/W  
°C/W  
per leg  
junction to case  
Notes:  
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110offset  
(2) Clip mounting (on case), where leads do overlap heatsink  
(3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19)  
(4) Pulse test: 300µs pulse width, 1% duty cycle  
www.vishay.com  
2
Document Number 88549  
27-Jun-03  
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Maximum Non-Repetitive Peak  
Forward Surge Current Per Leg  
Forward Current Derating Curve  
15  
100  
Resistive or Inductive Load  
TC = 105°C  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
10  
5
10  
1
0
50  
150  
0
100  
1
10  
100  
Number of Cycles at 60 HZ  
Case Temperature (°C)  
Typical Instantaneous  
Forward Characteristics Per Leg  
Typical Reverse Characteristics Per Leg  
1000  
100  
10  
100  
10  
Pulse Width = 300µs  
1% Duty Cycle  
TJ = 125°C  
100°C  
TJ = 125°C  
TJ = 100°C  
1.0  
0.1  
0.01  
TJ = 25°C  
1.0  
25°C  
0.1  
20  
40  
60  
80  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Switching  
Characteristics Per Leg  
Typical Junction Capacitance Per Leg  
50  
40  
30  
100  
10  
1
TJ = 125°C  
f = 1.0 MHZ  
Vsig = 50mVp-p  
@2A, 20A/µs  
@5A, 50A/µs  
@1A, 100A/µs  
@5A, 50A/µs  
20  
10  
@1A, 100A/µs  
trr  
Qrr  
@2A, 20A/µs  
0
50  
75  
125  
25  
100  
0.1  
1
10  
100  
Reverse Voltage (V)  
Junction Temperature (°C)  
Document Number 88549  
27-Jun-03  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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