UGB8BT/31 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3;
UGB8BT/31
型号: UGB8BT/31
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3

超快恢复二极管 快速恢复二极管
文件: 总4页 (文件大小:190K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UG8AT-DT, UGF8AT-DT, UGB8AT-DT  
Vishay Semiconductors  
formerly General Semiconductor  
Ultrafast Rectifier  
Reverse Voltage 50 to 200 V  
Forward Current 8.0 A  
Reverse Recovery Time 20 ns  
ITO-220AC (UGF8AT-DT)  
0.188 (4.77)  
0.172 (4.36)  
0.405 (10.27)  
0.383 (9.72)  
0.110 (2.80)  
0.100 (2.54)  
TO-220AC (UG8AT-DT)  
0.131 (3.39)  
0.122 (3.08)  
0.140 (3.56)  
0.130 (3.30)  
DIA.  
DIA.  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.154 (3.91)  
0.148 (3.74)  
0.676 (17.2)  
0.646 (16.4)  
DIA.  
0.600 (15.5)  
0.580 (14.5)  
0.370 (9.40)  
0.360 (9.14)  
0.055 (1.39)  
0.045 (1.14)  
0.350 (8.89)  
0.330 (8.38)  
0.113 (2.87)  
0.103 (2.62)  
PIN  
0.145 (3.68)  
0.135 (3.43)  
1
2
0.191 (4.85)  
0.171 (4.35)  
0.603 (15.32)  
0.573 (14.55)  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
0.110 (2.80)  
0.100 (2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.060 (1.52)  
PIN 1  
PIN  
1
2
1.148 (29.16)  
1.118 (28.40)  
0.160 (4.06)  
0.140 (3.56)  
PIN 2  
0.110 (2.79)  
0.100 (2.54)  
0.037 (0.94)  
0.027 (0.69)  
0.022 (0.55)  
0.014 (0.36)  
0.560 (14.22)  
0.205 (5.20)  
0.195 (4.95)  
PIN 1  
PIN 2  
0.530 (13.46)  
CASE  
0.105 (2.67)  
TO-263AB (UGB8AT-DT)  
0.037 (0.94)  
0.027 (0.68)  
0.095 (2.41)  
0.022 (0.56)  
0.014 (0.36)  
0.190 (4.83)  
0.160 (4.06)  
0.411 (10.45)  
0.380 (9.65)  
0.205 (5.20)  
0.195 (4.95)  
0.055 (1.40)  
0.045 (1.14)  
0.245 (6.22)  
MIN  
Mounting Pad Layout TO-263AB  
K
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.591 (15.00)  
Dimensions in inches  
and (millimeters)  
K
1
2
0-0.01 (0-0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.027 (0.686)  
0.037 (0.940)  
0.021 (0.53)  
0.014 (0.36)  
PIN 1  
PIN 2  
K - HEATSINK  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
Features  
Mechanical Data  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB  
molded plastic body  
• High reverse energy capability  
Terminals: Plated leads, solderable per  
MIL-STD-750, Method 2026  
• Excellent high temperature switching  
Polarity: As marked  
• High temperature soldering guaranteed: 250°C/10  
seconds at terminals  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 oz., 2.24 g  
• Glass passivated chip junction  
Document Number 88765  
17-Sep-03  
www.vishay.com  
1
UG8AT-DT, UGF8AT-DT, UGB8AT-DT  
Vishay Semiconductors  
formerly General Semiconductor  
Maximum Ratings (TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
UG8AT  
50  
UG8BT  
100  
UG8CT  
150  
UG8DT  
200  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
35  
70  
105  
140  
V
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 100°C  
50  
100  
150  
200  
V
IF(AV)  
8.0  
A
Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) at TC = 100°C  
IFSM  
TJ, TSTG  
VISOL  
150  
A
°C  
V
Operating junction and storage temperature range  
–55 to +150  
RMS Isolation voltage (UGF type only) from terminals to  
heatsink with t = 1.0 second, RH 30%  
4500 (NOTE 1)  
3500 (NOTE 2)  
1500 (NOTE 3)  
Electrical Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
UG8AT  
UG8BT  
UG8CT  
UG8DT  
Unit  
Maximum instantaneous forward voltage at 8.0  
20A  
1.0  
1.2  
VF  
V
5.0A,TJ= 150°C  
0.95  
(NOTE 4)  
Maximum DC reverse current  
at rated DC blocking voltage  
TJ=25°C  
TJ=100°C  
10  
300  
IR  
trr  
trr  
µA  
ns  
ns  
Maximum reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
20  
Maximum reverse recovery time at  
IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM  
TJ=25°C  
TJ=100°C  
30  
50  
Maximum recovered stored charged at  
IF=8.0A, VR=30V, di/dt=50A/µs  
TJ=25°C  
TJ=100°C  
20  
45  
Qrr  
CJ  
nC  
pF  
Typical junction capacitance at 4.0V, 1MHz  
45  
Thermal Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
UG8AT  
4.0  
UGF8AT  
UGB8AT  
4.0  
Unit  
°C/W  
Typical thermal resistance from junction to case  
RΘJC  
5.0  
Notes:  
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset  
(2) Clip mounting (on case), where leads do overlap heatsink  
(3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19”)  
(4) Pulse test: 300µs pulse width, 1% duty cycle  
www.vishay.com  
2
Document Number 88765  
17-Sep-03  
UG8AT-DT, UGF8AT-DT, UGB8AT-DT  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 – Maximum Forward Current  
Fig. 2 – Maximum Non-Repetitive Peak  
Forward Surge Current  
Derating Curve  
12  
1000  
TC = 100°C  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
Resistive or Inductive Load  
10  
8.0  
6.0  
4.0  
2.0  
0
100  
10  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 H  
Z
Fig. 3 – Typical Instantaneous  
Forward Characteristics  
Fig. 4 – Typical Reverse  
Characteristics  
100  
10  
1,000  
100  
10  
TJ = 125°C  
TJ = 100°C  
TJ = 25°C  
Pulse Width = 300µs  
1% Duty Cycle  
1
1
TJ = 25°C  
0.1  
0.01  
0.1  
0.01  
0
20  
40  
60  
80  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 – Reverse Switching  
Characteristics  
Fig. 6 – Typical Junction Capacitance  
60  
100  
10  
1
TJ = 25°C  
f = 1.0 MHZ  
Vsig = 50mVp-p  
di/dt = 150A/µs  
IF = 4.0A  
VR = 30V  
di/dt = 100A/µs  
50  
40  
30  
20  
10  
0
20A/µs  
50A/µs  
100A/µs  
50A/µs  
20A/µs  
150A/µs  
trr  
Qrr  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
Reverse Voltage (V)  
Junction Temperature (°C)  
Document Number 88765  
17-Sep-03  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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