UGB8JTHE3_A/I [VISHAY]
High Voltage Ultrafast Rectifier;
| 型号： | UGB8JTHE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Ultrafast Rectifier 功效 测试 二极管 |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
www.vishay.com
High Voltage Ultrafast Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
2
2
1
1
UG8xT
PIN 1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for D2PAK (TO-263AB package))
UGF8xT
PIN 1
CASE
PIN 2
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AC and ITO-220AC package)
PIN 2
D2PAK (TO-263AB)
• AEC-Q101 qualified available
K
- Automotive ordering code: base P/NHE3
(for ITO-220AC and D2PAK (TO-263AB package))
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
UGB8xT
PIN 1
K
TYPICAL APPLICATIONS
PIN 2
HEATSINK
For use in high voltage and high frequency power factor
correction application.
DESIGN SUPPORT TOOLS AVAILABLE
3
D
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)
3D Models
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3
-
RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
IF(AV
)
8.0 A
500 V to 600 V
100 A
VRRM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
IFSM
trr
25 ns
tfr
500 ns
meets JESD 201 class 2 whisker test
VF at IF = 8 A
TJ max.
1.5 V
Polarity: as marked
150 °C
Mounting Torque: 10 in-lbs max.
Package
Circuit configuration
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Single
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VRWM
VRMS
UG8HT
500
UG8JT
600
UNIT
Max. repetitive peak reverse voltage
Max. working reverse voltage
V
V
V
V
A
400
480
Max. RMS voltage
350
420
Max. DC blocking voltage
VDC
500
600
Max. average forward rectified current
IF(AV)
8.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
VAC
-55 to +150
1500
°C
V
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Revision: 24-Jun-2019
Document Number: 88767
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG8HT
UG8JT
UNIT
IF = 8 A
IF = 8 A
TJ = 25 °C
1.75
1.50
30
Max. instantaneous forward voltage(1)
VF
V
TJ = 125 °C
TJ = 25 °C
μA
μA
mA
ns
ns
-
Max. DC reverse current at VRWM
TJ = 100 °C
TJ = 125 °C
IR
800
4.0
25
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
Max. reverse recovery time
Typical softness factor (tb/ta)
Max. reverse recovery current
Peak forward recovery time
IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM
IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, Irr = 0.1 IRM
IF = 8.0 A, dI/dt = 64 A/μs, VR = 400 V, TC = 125 °C
IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, TC = 125 °C
IF = 8.0 A, dI/dt = 64 A/μs, VF = 1.1 x VF max.
50
S
1.0
5.5
10
IRM
IRM
tfr
A
A
500
ns
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG8
UGF
UGB8
UNIT
Typical thermal resistance from junction to case
RJC
2.2
5.0
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC
UG8JT-E3/45
1.80
1.95
1.33
1.33
1.95
1.33
1.33
45
45
45
81
P
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
Tube
Tube
ITO-220AC
UGF8JT-E3/45
D2PAK (TO-263AB)
D2PAK (TO-263AB)
ITO-220AC
UGB8JT-E3/45
Tube
UGB8JT-E3/81
Tape and reel
Tube
UGF8JTHE3_A/P (1)
UGB8JTHE3_A/P (1)
UGB8JTHE3_A/I (1)
D2PAK (TO-263AB)
D2PAK (TO-263AB)
P
Tube
I
Tape and reel
Note
(1)
AEC-Q101 qualified available in ITO-220 and D2PAK (TO-263AB) package
Revision: 24-Jun-2019
Document Number: 88767
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTCS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
10 000
1000
100
Resistive or Inductive Load
T
J = 125 °C
TJ = 100 °C
UG8, UGB8
6
UG8F
4
10
2
TJ = 25 °C
60
0
1
25
50
75
100
125
150
175
0
20
40
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
1000
100
10
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
350
300
250
200
150
100
50
Qrr
Trr
IF = 8.0 A
Vr = 30 V
10
1
240 A/µs
60 A/µs
50 A/µs
50 A/µs
0.1
60 A/µs
TJ = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
240 A/µs
100
Junction Capacitance (°C)
0
0.01
25
50
75
125
150
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Reverse Switching Characteristics
Revision: 24-Jun-2019
Document Number: 88767
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.154 (3.91) DIA.
0.370 (9.40)
0.185 (4.70)
0.148 (3.74) DIA.
0.175 (4.44)
0.055 (1.39)
0.360 (9.14)
0.113 (2.87)
0.103 (2.62)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.350 (8.89)
0.330 (8.38)
0.625 (15.87)
PIN
1.148 (29.16)
1.118 (28.40)
1
2
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
PIN 1
PIN 2
0.045 (1.14)
0.530 (13.46)
CASE
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
ITO-220AC
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.076 (1.93) REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
1
K
2
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 24-Jun-2019
Document Number: 88767
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2021
Document Number: 91000
1
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