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UGF8JT-E3

更新时间：2024-09-18 15:11:59
品牌：VISHAY
描述：DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTC, ITO-220AC, 2 PIN, Rectifier Diode

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UGF8JT-E3 概述

DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTC, ITO-220AC, 2 PIN, Rectifier Diode 整流二极管

UGF8JT-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AC
包装说明：R-PSFM-T2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.34
应用：EFFICIENCY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.5 V
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
JESD-609代码：e3最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.05 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

UGF8JT-E3 数据手册

通过下载UGF8JT-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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UG8HT, UGF8HT, UG8JT, UGF8JT  
VISHAY  
Vishay Semiconductors  
Ultrafast Rectifiers  
ITO-220AC  
TO-220AC  
Major Ratings and Characteristics  
IF(AV  
VRRM  
trr  
)
8 A  
500, 600 V  
25 ns  
tfr  
500 ns  
1.5 V  
VF  
2
2
1
1
UG8XT  
Features  
UGF8XT  
• Glass passivated chip junction  
PIN 1  
PIN 2  
PIN 1  
• Soft recovery characteristics  
CASE  
PIN 2  
• High efficiency, low switching losses  
• Meets MSL level 1, per J-STD-020C  
Mechanical Data  
Case: JEDEC TO-220AC, ITO-220AC  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
Typical Applications  
For use in high voltage and high frequency power fac- able per J-STD-002B and MIL-STD-750, Method  
tor correction application  
2026  
Mounting Torque: 10 in-lbs Maximum  
Epoxy meets UL-94V-0 Flammability rating  
Maximum Ratings  
(TC = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol  
VRRM  
UG8HT  
500  
UG8JT  
600  
Unit  
V
Maximum repetitive peak  
reverse voltage  
Maximum working reverse  
voltage  
VRWM  
400  
480  
V
Maximum RMS voltage  
VRMS  
VDC  
350  
500  
420  
600  
V
V
A
Maximum DC blocking voltage  
Maximum average forward  
rectified current  
IF(AV)  
8.0  
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method) at TC = 100 °C  
IFSM  
100  
A
Operating junction and storage  
temperature range  
TJ, TSTG  
VISOL  
-55 to +150  
°C  
V
4500(1)  
3500(2)  
1500(3)  
RMS Isolation voltage (UGF  
types only) from terminals to  
heatsink  
with t = 1.0 second, RH ≤ 30 %  
Document Number 88767  
02-Nov-04  
www.vishay.com  
1
UG8HT, UGF8HT, UG8JT, UGF8JT  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
(TC = 25 °C unless otherwise noted)  
Parameter  
Maximum instantaneous  
forward voltage(4)  
Test condition  
IF = 8 A, TJ = 25 °C  
IF = 8 A, TJ = 125 °C  
Symbol  
VF  
UG8HT  
UG8JT  
Unit  
V
1.75  
1.50  
Maximum DC reverse current at TJ = 25 °C  
IR  
30  
800  
4.0  
µA  
µA  
mA  
VRWM  
TJ = 100 °C  
TJ = 125 °C  
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
trr  
25  
ns  
ns  
-
at IF = 1.0 A, di/dt = 50 A/µs,  
VR = 30 V, Irr = 0.1 IRM  
50  
Typical softness factor (tb/ta)  
IF = 8.0 A, di/dt = 240 A/µs,  
R = 400 V, Irr = 0.1 IRM  
at IF = 8.0 A, di/dt = 64 A/µs,  
R = 400 V, TC = 125 °C  
S
1.0  
5.5  
10  
V
Maximum reverse recovery  
current  
IRM  
IRM  
tfr  
A
V
at IF = 8.0 A, di/dt = 240 A/µs,  
VR = 400 V, TC = 125 °C  
A
Peak forward recovery time  
Notes:  
at IF = 8.0 A, di/dt = 64 A/µs,  
VF = 1.1 VF max  
500  
ns  
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset  
(2) Clip mounting (on case), where leads do overlap heatsink  
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19")  
(4) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
(TC = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol  
RθJC  
UG8  
2.2  
UGF8  
5.0  
Unit  
Typical thermal resistance from  
junction to case  
°C/W  
www.vishay.com  
2
Document Number 88767  
02-Nov-04  
UG8HT, UGF8HT, UG8JT, UGF8JT  
VISHAY  
Vishay Semiconductors  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
10,000  
1,000  
100  
12.0  
Resistive or Inductive Load  
10.0  
8.0  
UG8  
6.0  
UG8F  
4.0  
10  
2.0  
0
1
0
20  
40  
60  
80  
100  
25  
50  
75  
100  
125  
150  
175  
Percent of Rated Peak Reverse Voltage (%)  
Case Temperature ( °C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 4. Typical Reverse Leakage Characteristics  
100  
1,000  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
(JEDEC Method)  
TJ = 25 °C  
f = 1.0 MHZ  
10  
Vsig = 50 mvp-p  
100  
10  
1
0.1  
1
10  
100  
1
10  
100  
Reverse Voltage (V)  
Number of Cycles at 60 H  
Z
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Figure 5. Typical Junction Capacitance  
100  
350  
Qrr  
Trr  
IF = 8.0 A  
Vr = 30 V  
300  
250  
TJ = 25 °C max.  
Pulse Width = 300 µs  
1 % Duty Cycle  
10  
di/dt =  
200  
150  
100  
1
0.1  
50  
0
0.01  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
25  
50  
75  
100  
125  
150  
Instantaneous Forward Voltage (V)  
Junction Temperature ( °C)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Reverse Switching Characteristics  
Document Number 88767  
02-Nov-04  
www.vishay.com  
3
UG8HT, UGF8HT, UG8JT, UGF8JT  
Vishay Semiconductors  
VISHAY  
Dimensions in Inches and (millimeters)  
TO-220AC  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.154 (3.91)  
DIA.  
0.370 (9.40)  
0.360 (9.14)  
0.148 (3.74)  
0.113 (2.87)  
0.103 (2.62)  
0.145 (3.68)  
0.135 (3.43)  
0.603 (15.32)  
0.573 (14.55)  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
1
2
1.148 (29.16)  
1.118 (28.40)  
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045(1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.105 (2.67)  
0.035 (0.90)  
0.095 (2.41)  
0.028 (0.70)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.20)  
0.195 (4.95)  
ITO-220AC  
0.188 (4.77)  
0.172 (4.36)  
0.110 (2.80)  
0.100 (2.54)  
0.405 (10.27)  
0.383 (9.72)  
0.131 (3.39)  
DIA.  
0.140 (3.56)  
0.130 (3.30)  
DIA.  
0.122 (3.08)  
0.676 (17.2)  
0.646 (16.4)  
0.600 (15.5)  
0.580 (14.5)  
0.350 (8.89)  
0.330 (8.38)  
PIN  
1
2
0.191 (4.85)  
0.171 (4.35)  
0.057 (1.45)  
0.045(1.14)  
0.110 (2.80)  
0.100 (2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.037 (0.94)  
0.027 (0.69)  
0.022 (0.55)  
0.014 (0.36)  
0.205 (5.20)  
0.195 (4.95)  
www.vishay.com  
4
Document Number 88767  
02-Nov-04  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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