V10P10_11 [VISHAY]
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier; 高电流密度表面贴装Trench MOS势垒肖特基整流器
| 型号： | V10P10_11 |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
V10P10
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.453 V at IF = 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
TMBS® eSMP® Series
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward volatge drop, low power losses
• High efficiency operation
1
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
TO-277A (SMPC)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
K
Anode 1
Anode 2
Cathode
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
10 A
100 V
180 A
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
VRRM
Base P/N-M3
- halogen-free, RoHS compliant, and
IFSM
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
EAS
100 mJ
0.574 V
150 °C
VF at IF = 10 A
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P10
V1010
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
V
A
10
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
EAS
180
100
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C 2 °C
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 89006
Revision: 25-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V10P10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
100 (minimum)
0.512
MAX.
UNIT
Breakdown voltage
IR = 1 mA
TA = 25 °C
VBR
-
-
V
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
TA = 25 °C
0.625
0.68
-
(1)
Instantaneous forward voltage
VF
V
0.453
TA = 125 °C
0.574
0.62
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
7.1
μA
mA
μA
VR = 70 V
4.5
-
(2)
Reverse current
IR
30.4
150
20
VR = 100 V
10.4
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V10P10
UNIT
(1)
RJA
60
3
Typical thermal resistance
°C/W
RJL
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
V10P10-M3/86A
V10P10-M3/87A
V10P10HM3/86A (1)
V10P10HM3/87A (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
0.10
0.10
0.10
86A
87A
86A
87A
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
Automotive grade
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89006
Revision: 25-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V10P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
12
100
10
Resistive or Inductive Load
TA = 150 °C
10
8
TA = 125 °C
1
6
0.1
0.01
4
T
A = 25 °C
2
TL measured
at the Cathode Band Terminal
0.001
0
10
20
30
40
50
60
70
80
90 100
0
25
50
75
100
125
150
175
Percent of Rated Peak Reverse Voltage (%)
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
8
10 000
1000
100
D = 0.8
D = 0.3
D = 0.2
D = 0.5
7
6
5
4
3
2
1
0
D = 0.1
D = 1.0
T
D = tp/T
tp
0
1
2
3
4
5
6
7
8
9
10 11 12
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
100
Junction to Ambient
TA = 150 °C
TA = 125 °C
10
1
0.1
TA = 25 °C
1
0.01
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89006
Revision: 25-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V10P10
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89006
Revision: 25-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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