V10P8-M3/87A [VISHAY]
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier;型号: | V10P8-M3/87A |
厂家: | VISHAY |
描述: | High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier |
文件: | 总5页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V10P8
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.44 V at IF = 5 A
FEATURES
®
eSMP Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
K
Anode 1
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3
D
3D Models
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
10 A
80 V
Base P/N-M3
-
halogen-free, RoHS-compliant, and
VRRM
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
IFSM
VF at IF = 10 A (TA = 125 °C)
TJ max.
180 A
0.56 V
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
Package
SMPC (TO-277A)
Single
Circuit configuration
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P8
UNIT
Device marking code
V108
Maximum repetitive peak reverse voltage
VRRM
80
10
V
A
(1)
IF
Maximum average forward rectified current (fig. 1)
(2)
IF
3.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
180
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 18-Dec-2019
Document Number: 87712
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P8
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.50
0.60
0.44
0.56
-
MAX.
-
UNIT
IF = 5.0 A
TA = 25 °C
IF = 10 A
IF = 5.0 A
IF = 10 A
0.68
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.64
0.8
22
TA = 25 °C
(2)
Reverse current
VR = 80 V
IR
mA
TA = 125 °C
9.0
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P8
UNIT
(1)(2)
RJA
75
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Free air mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction-to-mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
V10P8-M3/86A
0.10
0.10
0.10
0.10
86A
87A
H
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V10P8-M3/87A
V10P8HM3_A/H (1)
V10P8HM3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
11
10
9
8
7
6
5
4
3
10000
1000
100
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10000
1000
100
TM = 128 ƱC RthJM = 4 °C/W
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
T
TA = 25ƱC RthJA = 75 °C/W
D = 0.1
2
1
0
TM measured at cathode
terminal mount typical values
D = tp/T
tp
10
10
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10 11 12
Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Dec-2019
Document Number: 87712
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P8
www.vishay.com
Vishay General Semiconductor
Axis Title
Axis Title
10000
1000
100
10 000
1000
100
10000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
TJ = 150 °C
1000
100
10
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
0.1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
0.1
1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
100
10
10000
100
10
1
10000
1000
100
TJ = 150 °C
Junction to Ambient
TJ = 125 °C
TJ = 100 °C
1
1000
100
10
0.1
0.01
0.001
0.0001
TJ = 25 °C
TJ = -40 °C
10
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Dec-2019
Document Number: 87712
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P8
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 18-Dec-2019
Document Number: 87712
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2021
Document Number: 91000
1
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