V10PM63-M3/H [VISHAY]
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier;型号: | V10PM63-M3/H |
厂家: | VISHAY |
描述: | High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier |
文件: | 总5页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V10PM63
Vishay General Semiconductor
www.vishay.com
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per J-STD-020,
2
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
SMPC (TO-277A)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
Anode 1
Anode 2
Cathode
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
10.0 A
60 V
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
VRRM
-
halogen-free, RoHS-compliant, and
IFSM
VF at IF = 10.0 A (TJ = 125 °C)
TJ max.
180 A
0.52 V
175 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Package
SMPC (TO-277A)
Single
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PM63
10M63
60
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
10.0
Maximum average forward rectified current (fig. 1)
(2)
IF
4.5
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
180
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Notes
(1)
(2)
(3)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended copper pad area
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ <1/ RJA
Revision: 24-Jun-2020
Document Number: 87026
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10PM63
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.52
0.58
0.42
0.52
-
MAX.
-
UNIT
IF = 5.0 A
TJ = 25 °C
IF = 10.0 A
IF = 5.0 A
IF = 10.0 A
0.65
-
(1)
Instantaneous forward voltage
VF
V
TJ = 125 °C
0.57
0.025
5.0
-
TJ = 25 °C
(2)
Reverse current
VR = 60 V
IR
mA
pF
TJ = 125 °C
1.6
Typical junction capacitance
4.0 V, 1 MHz
CJ
2060
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PM63
UNIT
(1)(2)
RJA
75
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Free air mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
V10PM63-M3/H
V10PM63-M3/I
V10PM63HM3/H (1)
V10PM63HM3/I (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.10
0.10
0.10
0.10
H
I
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
H
I
Note
(1)
AEC-Q101 qualified
Revision: 24-Jun-2020
Document Number: 87026
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10PM63
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
RthJM = 4 °C/W
Axis Title
12
10
8
10000
1000
100
100
10
10000
1000
100
TM measured at cathode
terminal mount typical values
1
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
TJ = 100 °C
6
0.01
RthJA = 75 °C/W
0.001
0.0001
0.00001
0.000001
4
TJ = 25 °C
2
TJ = -40 °C
60
0
10
10
0
25
50
75
100 125 150 175
20
40
80
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Axis Title
Axis Title
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10000
1000
100
10 000
1000
100
10000
1000
100
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = tp/T
tp
10
10
10
0
1
2
3
4
5
6
7
8
9
10 11 12
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
100
10
1
10000
1000
100
100
10
1
10000
1000
100
Junction to Ambient
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
0.1
10
10
0
0.2
0.4
0.6
0.8
1.0
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 24-Jun-2020
Document Number: 87026
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10PM63
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 24-Jun-2020
Document Number: 87026
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 01-Jan-2021
Document Number: 91000
1
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