V12P8HM3_A/H [VISHAY]
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier;型号: | V12P8HM3_A/H |
厂家: | VISHAY |
描述: | High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier |
文件: | 总5页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V12P8
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.42 V at IF = 6 A
FEATURES
• Very low profile - typical height of 1.1 mm
eSMP® Series
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
K
Anode 1
Anode 2
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3
D
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
12 A
80 V
VRRM
Base P/N-M3
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
IFSM
VF at IF = 12 A (TA = 125 °C)
TJ max.
200 A
0.54 V
150 °C
(“_X” denotes revision code e.g. A, B,.....)
Package
SMPC (TO-277A)
Single
Circuit configuration
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12P8
UNIT
Device marking code
V128
Maximum repetitive peak reverse voltage
VRRM
80
12
V
A
(1)
IF
Maximum average forward rectified current (fig. 1)
(2)
IF
4.3
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 18-Dec-2019
Document Number: 87714
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.49
0.58
0.42
0.54
-
MAX.
-
UNIT
IF = 6.0 A
TA = 25 °C
IF = 12 A
IF = 6.0 A
IF = 12 A
0.66
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.62
1
TA = 25 °C
(2)
Reverse current
VR = 80 V
IR
mA
TA = 125 °C
12
30
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12P8
UNIT
(1)(2)
RJA
75
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Free air mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction-to-mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
V12P8-M3/86A
0.10
0.10
0.10
0.10
86A
87A
H
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V12P8-M3/87A
V12P8HM3_A/H (1)
V12P8HM3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
Revision: 18-Dec-2019
Document Number: 87714
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
14
12
10
8
10000
1000
100
100
10
10000
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TM = 122 ƱC RthJM = 4 °C/W
1
0.1
6
TA = 25 ƱC RthJA = 75 °C/W
TJ = 25 °C
TJ = -40 °C
0.01
0.001
0.0001
4
2
TM measured at cathode
terminal mount typical values
0
10
10
0
25
50
75
100
125
150
20
40
60
80
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
Axis Title
Axis Title
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10000
1000
100
10 000
10000
TJ = 25 °C
D = 0.8
D = 0.5
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.3
D = 0.2
1000
100
10
D = 1.0
1000
100
D = 0.1
T
D = tp/T
tp
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
10000
1000
100
100
10
1
10000
1000
100
Junction to Ambient
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
0.1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
10
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Dec-2019
Document Number: 87714
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P8
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 18-Dec-2019
Document Number: 87714
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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