V15P8HM3_A/H [VISHAY]

High Current Density Surface Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier;


型号：	V15P8HM3_A/H
厂家：	VISHAY
描述：	High Current Density Surface Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier
文件：	总5页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V15P8

www.vishay.com

Vishay General Semiconductor

High Current Density Surface Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.36 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

ADDITIONAL RESOURCES

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

15 A

80 V

Base P/N-M3

halogen-free, RoHS-compliant, and

V_RRM

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

I_FSM

V_Fat I_F= 15 A (T_A= 125 °C)

T_Jmax.

220 A

0.55 V

150 °C

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

Package

SMPC (TO-277A)

Single

Circuit configuration

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P8

UNIT

Device marking code

V158

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum average forward rectified current (fig. 1)

(2)

I_F

4.6

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

220

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 18-Dec-2019

Document Number: 87717

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V15P8

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.45

0.49

0.58

0.36

0.42

0.55

MAX.

UNIT

I_F= 5.0 A

I_F= 7.5 A

I_F= 15 A

I_F= 5.0 A

I_F= 7.5 A

I_F= 15 A

T_A= 25 °C

0.66

(1)

Instantaneous forward voltage

V_F

T_A= 125 °C

0.63

1.2

T_A= 25 °C

(2)

Reverse current

V_R= 80 V

I_R

T_A= 125 °C

Notes

(1)

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: pulse width  5 ms

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P8

UNIT

(1)(2)

R_JA

Typical thermal resistance

°C/W

(3)

R_JM

Notes

(1)

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Free air mounted on recommended copper pad area; thermal resistance R_JA- junction to ambient

Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R_JM- junction to mount

(2)

(3)

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

V15P8-M3/86A

0.10

86A

87A

1500

6500

1500

6500

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

V15P8-M3/87A

V15P8HM3_A/H ⁽¹⁾

V15P8HM3_A/I ⁽¹⁾

Note

(1)

AEC-Q101 qualified

Revision: 18-Dec-2019

Document Number: 87717

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V15P8

www.vishay.com

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_M= 115 ƱC R_thJM= 4 °C/W

0.1

0.01

T_A= 25ƱC R_thJA= 75 °C/W

T_J= 25 °C

T_J= -40 °C

0.001

T_Mmeasured at cathode

terminal mount typical values

0.0001

100

125

150

100

Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics

Axis Title

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

10000

1000

100

10 000

10000

D = 0.8

D = 0.5

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

D = 0.3

1000

100

1000

100

D = 0.2

D = 0.1

D = 1.0

D = t_p/T

t_p

10 12 14 16 18

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

10000

1000

100

10000

1000

100

Junction to Ambient

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

Instantaneous Forward Voltage (V)

0.01

0.1

100

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 18-Dec-2019

Document Number: 87717

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V15P8

www.vishay.com

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMPC (TO-277A)

0.187 (4.75)

0.175 (4.45)

0.016 (0.40)

0.006 (0.15)

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

0.047 (1.20)

0.039 (1.00)

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

Mounting Pad Layout

0.087 (2.20)

0.075 (1.90)

0.189 (4.80)

MIN.

0.189 (4.80)

0.173 (4.40)

0.186 (4.72)

MIN.

0.268

(6.80)

0.155 (3.94)

NOM.

0.030 (0.75) NOM.

0.049 (1.24)

0.037 (0.94)

0.050 (1.27)

MIN.

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

0.041

(1.04)

0.055 (1.40)

MIN.

Conform to JEDEC TO-277A

Revision: 18-Dec-2019

Document Number: 87717

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 01-Jan-2021

Document Number: 91000

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