V20100R
更新时间:2024-09-18 07:39:26
品牌:VISHAY
描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20100R 概述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 双高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A
V20100R 数据手册
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V20100R & VF20100R
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.54 V at I = 5 A
F
F
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 260 °C, 40 s
3
3
2
1
2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
V20100R
VF20100R
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
CASE
PIN 2
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
Case: TO-220AB and ITO-220AB
VRRM
100 V
120 A
0.65 V
150 °C
Epoxy meets UL 94V-0 flammability rating
IFSM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF at IF = 10 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V20100R
VF20100R
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current
(Fig. 1)
per device
per diode
20
10
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
120
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 89062
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
V20100R & VF20100R
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
100 (minimum)
-
V
IF = 5 A
IF = 10 A
0.62
0.81
-
T
A = 25 °C
TA =125°C
A = 25 °C
0.90
Instantaneous forward voltage per diode (1)
Reverse current per diode (2)
VF
V
IF = 5 A
IF = 10 A
0.54
0.65
-
0.72
T
4
4
-
-
µA
mA
VR = 70 V
TA=125°C
IR
TA = 25 °C
-
150
15
µA
V
R = 100 V
TA = 125 °C
5.6
mA
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V20100R
VF20100R
UNIT
Typical thermal resistance per diode
RθJC
2.8
5.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
PREFERRED P/N
V20100R-E3/4W
VF20100R-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.88
1.75
4W
4W
Tube
Tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
25
10
8
Resistive or Inductive Load
D = 0.8
D = 0.5
D = 0.3
V20100R
20
VF20100R
15
6
D = 0.2
D = 0.1
D = 1.0
10
5
4
2
0
T
D = tp/T
tp
10
Mounted on specific Heatsink
0
0
2
4
6
8
12
0
25
50
75
100
125
150
175
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
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2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89062
Revision: 19-May-08
New Product
V20100R & VF20100R
Vishay General Semiconductor
100
10
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
V20100R
1
0.1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
1
0.1
0.01
TA = 25 °C
VF20100R
0.1
0.001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89062
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
V20100R & VF20100R
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
45° REF.
0.140 (3.56) DIA.
0.135 (3.43) DIA.
0.125 (3.17) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
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4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89062
Revision: 19-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
V20100R 相关器件
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V20100S-M3/4W | VISHAY | Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 | |
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