V20120SG_09 [VISHAY]

High-Voltage Trench MOS Barrier Schottky Rectifier; 高压Trench MOS势垒肖特基整流器
V20120SG_09
型号: V20120SG_09
厂家: VISHAY    VISHAY
描述:

High-Voltage Trench MOS Barrier Schottky Rectifier
高压Trench MOS势垒肖特基整流器

高压
文件: 总5页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
V20120SG, VF20120SG, VB20120SG & VI20120SG  
Vishay General Semiconductor  
High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.54 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 245 °C (for TO-263AB package)  
3
3
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106 (for TO-220AB, ITO-220AB,  
and TO-262AA package)  
2
2
1
1
V20120SG  
TO-263AB  
VF20120SG  
PIN 1  
PIN 3  
PIN 1  
PIN 2  
CASE  
PIN 2  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PIN 3  
TO-262AA  
K
TYPICAL APPLICATIONS  
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
A
3
NC  
2
MECHANICAL DATA  
1
VB20120SG  
VI20120SG  
Case: TO-220AB, ITO-220AB, TO-263AB and  
TO-262AA  
PIN 1  
PIN 3  
NC  
A
K
PIN 2  
K
HEATSINK  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
IF(AV)  
VRRM  
IFSM  
20 A  
120 V  
150 A  
VF at IF = 20 A  
TJ max.  
0.78 V  
150 °C  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL V20120SG  
VRRM  
IF(AV)  
VF20120SG VB20120SG VI20120SG UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
120  
20  
V
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
EAS  
150  
80  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current  
at tp = 2 µs, 1 kHz, TJ = 38 °C 2 °C  
IRRM  
0.5  
Voltage rate of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/µs  
V
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 88994  
Revision: 24-Jun-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
V20120SG, VF20120SG, VB20120SG & VI20120SG  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
Breakdown voltage  
I
R = 1.0 mA  
TA = 25 °C  
TA = 25 °C  
VBR  
120 (minimum)  
-
IF = 5 A  
IF = 10 A  
IF = 20 A  
0.62  
0.81  
1.20  
-
-
1.33  
V
Instantaneous forward voltage (1)  
VF  
IF = 5 A  
IF = 10 A  
IF = 20 A  
0.54  
0.65  
0.78  
-
-
TA = 125 °C  
0.88  
T
A = 25 °C  
10  
7
-
-
µA  
mA  
VR = 90 V  
TA =125°C  
Reverse current (2)  
IR  
T
T
A = 25 °C  
A = 125 °C  
-
12  
250  
25  
µA  
mA  
V
R = 120 V  
Notes  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V20120SG  
VF20120SG  
VB20120SG  
VI20120SG  
UNIT  
Typical thermal resistance  
RθJC  
2.2  
4.2  
2.2  
2.2  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-262AA  
PREFERRED P/N  
V20120SG-E3/4W  
VF20120SG-E3/4W  
VB20120SG-E3/4W  
VB20120SG-E3/8W  
VI20120SG-E3/4W  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
Tube  
50/tube  
50/tube  
50/tube  
800/reel  
50/tube  
1.88  
1.75  
1.38  
1.38  
1.45  
4W  
4W  
4W  
8W  
4W  
Tube  
Tube  
Tape and reel  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
25  
35  
30  
D = 0.8  
D = 0.5  
Resistive or Inductive Load  
D = 0.3  
20  
V(B,I)20120SG  
D = 0.2  
25  
20  
15  
10  
5
D = 1.0  
15  
10  
5
VF20120SG  
D = 0.1  
T
D = tp/T  
16  
tp  
Mounted on Specific Heatsink  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
4
8
12  
20  
24  
Average Forward Current (A)  
Case Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Forward Power Loss Characteristics  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88994  
Revision: 24-Jun-09  
New Product  
V20120SG, VF20120SG, VB20120SG & VI20120SG  
Vishay General Semiconductor  
100  
10  
1
10  
TA = 150 °C  
Junction to Case  
T
A = 125 °C  
TA = 100 °C  
TA = 25 °C  
V(B,I)20120SG  
0.1  
1
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Typical Transient Thermal Impedance  
100  
10  
Junction to Case  
TA = 150 °C  
10  
TA = 125 °C  
1
TA = 100 °C  
1
0.1  
0.01  
VF20120SG  
TA = 25 °C  
0.1  
0.01  
0.001  
0.1  
1
10  
100  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
t - Pulse Duration (s)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Figure 7. Typical Transient Thermal Impedance  
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
10  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance  
Document Number: 88994  
Revision: 24-Jun-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
New Product  
V20120SG, VF20120SG, VB20120SG & VI20120SG  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.415 (10.54) MAX.  
0.384 (9.75)  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
7° REF.  
0.113 (2.87)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.103 (2.62)  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.135 (3.43)  
0.580 (14.73)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.191 (4.85)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.025 (0.64)  
0.104 (2.65)  
0.096 (2.45)  
0.020 (0.51)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-262AA  
0.185 (4.70)  
0.411 (10.45) MAX.  
0.250 (6.35) MIN.  
K
0.175 (4.44)  
0.055 (1.40)  
0.047 (1.19)  
30° (TYP.)  
(REF.)  
0.055 (1.40)  
0.045 (1.14)  
0.401 (10.19)  
0.350 (8.89)  
0.330 (8.38)  
0.381 (9.68)  
0.950 (24.13)  
0.920 (23.37)  
0.510 (12.95)  
0.470 (11.94)  
PIN  
1
2
3
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.560 (14.22)  
0.530 (13.46)  
0.045 (1.14)  
0.035 (0.90)  
0.028 (0.70)  
0.022 (0.56)  
0.014 (0.35)  
0.104 (2.65)  
0.096 (2.45)  
0.205 (5.20)  
0.195 (4.95)  
TO-263AB  
0.411 (10.45)  
0.190 (4.83)  
Mounting Pad Layout  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.055 (1.40)  
0.045 (1.14)  
0.160 (4.06)  
0.42 (10.66) MIN.  
K
0.055 (1.40)  
0.047 (1.19)  
0.33 (8.38) MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
NC  
K
A
0.591 (15.00)  
0.670 (17.02)  
0 to 0.01 (0 to 0.254)  
0.591 (15.00)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.037 (0.940)  
0.15 (3.81) MIN.  
0.027 (0.686)  
0.105 (2.67)  
0.095 (2.41)  
0.08 (2.032) MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88994  
Revision: 24-Jun-09  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

相关型号:

V20120SG_11

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20120SG_12

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20120SHM3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20120S_11

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20120S_12

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
VISHAY

V20150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
VISHAY

V20150C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20150CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20150C_11

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20150C_12

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V20150S

High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY