V30120SGHM3/4W [VISHAY]
DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | V30120SGHM3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V30120SG, VI30120SG
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.47 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
3
2
2
1
1
TYPICAL APPLICATIONS
V30120SG
VI30120SG
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 1
PIN 2
CASE
PIN 2
K
PIN 3
PIN 3
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
30 A
120 V
220 A
0.81 V
150 °C
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
IFSM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 30 A
TJ max.
Package
TO-220AB, TO-262AA
Single
Polarity: as marked
Diode variation
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120SG
VI30120SG
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
120
30
V
A
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
220
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Revision: 09-Nov-17
Document Number: 89245
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120SG, VI30120SG
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.54
0.80
1.16
0.47
0.66
0.81
13
MAX.
UNIT
IF = 5 A
-
IF = 15 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
1.28
-
(1)
Instantaneous forward voltage
VF
V
IF = 15 A
IF = 30 A
TA = 125 °C
-
0.90
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 90 V
13
-
(2)
Reverse current
IR
-
500
55
VR = 120 V
23
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120SG
VI30120SG
UNIT
Typical thermal resistance
RJC
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
PREFERRED P/N
V30120SG-M3/4W
VI30120SG-M3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.88
1.45
4W
4W
Tube
Tube
50/tube
Revision: 09-Nov-17
Document Number: 89245
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120SG, VI30120SG
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
100
10
Resistive or Inductive Load
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
TA = 25 °C
Mounted on Specific Heatsink
0
10
20
30
40
50
60
70
80
90 100
0
25
50
75
100
125
150
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
50
10
D = 0.8
D = 0.5
Junction to Case
45
40
35
30
25
20
15
10
5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
1
T
D = tp/T
tp
32
0
0.1
0.01
0
4
8
12
16
20
24
28
36
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
Document Number: 89245
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120SG, VI30120SG
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.950 (24.13)
0.920 (23.37)
PIN
2
0.510 (12.95)
0.470 (11.94)
1
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
Revision: 09-Nov-17
Document Number: 89245
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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