V30D202C [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
V30D202C
型号: V30D202C
厂家: VISHAY    VISHAY
描述:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件: 总5页 (文件大小:92K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
V30D202C  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
TMBS® eSMP® Series  
• Trench MOS Schottky technology generation 2  
TO-263AC (SMPD)  
• Very low profile - typical height of 1.7 mm  
• Ideal for automated placement  
K
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
1
of 260 °C  
2
Top View  
Bottom View  
• AEC-Q101 qualified available:  
- Automotive ordering code: base P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
V30D202C  
PIN 1  
PIN 2  
K
HEATSINK  
TYPICAL APPLICATIONS  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15.0 A  
200 V  
MECHANICAL DATA  
VRRM  
Case: TO-263AC (SMPD)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
IFSM  
VF at IF = 15.0 A (TA = 125 °C)  
TJ max.  
260 A  
0.66 V  
175 °C  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
Package  
TO-263AC (SMPD)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Diode variations  
Dual common cathode  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: As marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V30D202C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
200  
30  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
15  
Maximum DC reverse voltage  
VDC  
IFSM  
160  
V
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
260  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +175  
Revision: 10-Feb-15  
Document Number: 87748  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V30D202C  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.72  
0.78  
0.8  
0.56  
0.64  
0.66  
1
MAX.  
UNIT  
IF = 5 A  
-
IF = 10 A  
IF = 15 A  
IF = 5 A  
TA = 25 °C  
-
0.88  
-
V
(1)  
Instantaneous forward voltage per diode  
VF  
IF = 10 A  
IF = 15 A  
TA = 125 °C  
-
0.73  
-
TA = 25 °C  
TA = 125 °C  
TA = 25 °C  
TA = 125 °C  
μA  
mA  
μA  
VR = 160 V  
VR = 200 V  
2
-
(2)  
Reverse current at rated VR per diode  
IR  
-
200  
50  
5
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 5 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V30D202C  
UNIT  
per diode  
per device  
per device  
2.0  
1.1  
50  
RJC  
Typical thermal resistance  
°C/W  
(1)(2)  
RJA  
Notes  
(1)  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to -mount  
Free air, without heatsink  
(2)  
ORDERING INFORMATION (Example)  
UNIT WEIGHT  
PACKAGE  
PREFERRED P/N  
PACKAGE CODE BASE QUANTITY  
DELIVERY MODE  
(g)  
TO-263AC (SMPD) V30D202C-M3/I  
TO-263AC (SMPD) V30D202CHM3/I (1)  
0.55  
0.55  
I
I
2000/reel  
2000/reel  
13" diameter plastic tape and reel  
13" diameter plastic tape and reel  
Note  
(1)  
AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
35  
30  
25  
20  
15  
10  
5
13.0  
12.0  
11.0  
10.0  
9.0  
D = 0.8  
D = 0.5  
RthJC = 1.1 °C/W  
D = 0.3  
D = 1.0  
8.0  
D = 0.2  
7.0  
6.0  
D = 0.1  
5.0  
4.0  
T
3.0  
RthJA = 50 °C/W  
2.0  
D = tp/T  
tp  
1.0  
0
0.0  
0
25  
50  
75  
100  
125  
150  
175  
0
2
4
6
8
10 12 14 16 18  
Average Forward Current (A)  
Fig. 2 - Forward Power Loss Characteristics  
Case Temperature (°C)  
Fig. 1 - Forward Current Derating Curve  
Revision: 10-Feb-15  
Document Number: 87748  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V30D202C  
Vishay General Semiconductor  
www.vishay.com  
100  
10  
1
100  
10  
1
Junction to Ambient  
TA = 175 °C  
TA = 150 °C  
TA = 125 °C  
TA = 100 °C  
TA = 25 °C  
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.01  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Fig. 6 - Typical Transient Thermal Impedance  
Fig. 3 - Typical Instantaneous Forward Characteristics  
100  
60  
55  
Epoxy printed circuit  
board FR4 copper  
thickness = 70 μm  
TA = 175 °C  
10  
TA = 150 °C  
50  
45  
40  
35  
30  
25  
20  
TA = 125 °C  
1
TA = 100 °C  
0.1  
0.01  
0.001  
TA = 25 °C  
S (cm2)  
0.0001  
10 20 30 40 50 60 70 80 90 100  
1
2
3
4
5
6
7
8
9
Percent of Rated Peak Reverse Voltage (%)  
Copper Pad Areas (cm2)  
Fig. 4 - Typical Reverse Characteristics  
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.  
Copper Pad Areas  
TJ = 25 °C  
f = 1.0 MHz  
1000  
100  
10  
Vsig = 50 mVp-p  
0.1  
1
10  
100  
Reverse Voltage (V)  
Fig. 5 - Typical Junction Capacitance  
Revision: 10-Feb-15  
Document Number: 87748  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
V30D202C  
Vishay General Semiconductor  
www.vishay.com  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-263AC (SMPD)  
ꢀꢇꢅꢂꢋꢅꢄ  
ꢅꢂꢉꢅꢋ  
ꢀꢇꢂꢁꢅꢄ  
ꢀꢇꢂꢊꢅꢄ  
ꢅꢂꢅꢌꢇ  
ꢅꢂꢅꢊꢈ  
ꢀꢃꢂꢁꢅꢄ  
ꢅꢂꢈꢁꢊ  
ꢀꢅꢂꢆꢋꢄ  
ꢅꢂꢅꢋꢅ  
ꢀꢅꢂꢋꢌꢄ  
ꢅꢂꢅꢇꢇ  
ꢅꢂꢅꢆꢃꢀꢇꢂꢆꢅꢄ5()  
ꢀꢇꢂꢋꢇꢄ  
ꢀꢅꢂꢁꢇꢄ  
ꢅꢂꢅꢉꢁ  
ꢅꢂꢅꢈꢋ  
ꢀꢁꢂꢃꢃꢄ  
ꢅꢂꢈꢆꢉ  
ꢀꢁꢂꢆꢃꢄ  
ꢅꢂꢈꢈꢁ  
ꢀꢇꢋꢂꢃꢈꢄ  
ꢀꢇꢋꢂꢈꢈꢄ  
ꢅꢂꢆꢅꢃ  
ꢅꢂꢉꢁꢆ  
ꢅ WR ꢅꢂꢅꢇ  
ꢀꢅ WR ꢅꢂꢋꢆꢉꢄ  
ꢀꢇꢂꢌꢉꢄ  
ꢀꢇꢂꢈꢉꢄ  
ꢅꢂꢅꢊꢃ  
ꢅꢂꢅꢆꢈ  
ꢀꢇꢂꢊꢅꢄ  
ꢅꢂꢅꢊꢈ  
ꢀꢅꢂꢆꢋꢄ  
ꢀꢅꢂꢋꢌꢄ  
ꢅꢂꢅꢋꢅ  
ꢅꢂꢅꢇꢇ  
ꢀꢇꢂꢋꢅꢄ  
ꢅꢂꢅꢉꢌ  
ꢅꢂꢋꢅꢅ  
ꢀꢆꢂꢅꢁꢄ  
ꢂꢋꢈꢄ  
ꢅꢂꢅꢆꢋꢍꢍ  
120ꢂ  
ꢀꢅꢂꢌꢋꢄ  
ꢅꢂꢅꢋꢁ  
Mounting Pad Layout  
ꢅꢂꢉꢋꢅꢀꢇꢅꢂꢊꢊꢄ0,1ꢂ  
ꢀꢁꢂꢊꢅꢄ  
ꢅꢂꢈꢈꢃ  
ꢀꢁꢂꢋꢅꢄ  
ꢅꢂꢈꢋꢈ  
ꢀꢌꢂꢅꢅꢄ  
ꢅꢂꢋꢌꢊ  
ꢀꢊꢂꢊꢅꢄ  
ꢅꢂꢋꢊꢅ  
ꢅꢂꢈꢈꢅ  
ꢀꢁꢂꢈꢁꢄ  
5()ꢂ  
ꢅꢂꢇꢃꢉ  
ꢀꢉꢂꢃꢈꢄ  
120ꢂ  
ꢀꢇꢆꢂꢈꢈꢄ  
ꢅꢂꢊꢅꢉ  
ꢀꢇꢈꢂꢈꢈꢄ  
ꢅꢂꢆꢋꢆ  
ꢅꢂꢇꢋꢅꢀꢈꢂꢅꢆꢄ5()ꢂ  
ꢀꢋꢂꢊꢌꢄ  
ꢀꢋꢂꢉꢇꢄ  
ꢅꢂꢇꢅꢆ  
ꢅꢂꢅꢃꢆ  
ꢅꢂꢅꢁꢅꢀꢋꢂꢅꢈꢄ0,1ꢂ  
Revision: 10-Feb-15  
Document Number: 87748  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1

相关型号:

V30D202C-M3/I

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPD, 3/2 PIN
VISHAY

V30D202CHM3/I

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPD, 3/2 PIN
VISHAY

V30D202C_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V30D45C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V30D45C-M3/I

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPD, 3/2 PIN
VISHAY

V30DL45-M3

Low-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V30DL45HM3

Low-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY

V30DL50C-M3

Dual Trench MOS Barrier Schottky Rectifier
VISHAY

V30DL50C-M3_15

Dual Trench MOS Barrier Schottky Rectifier
VISHAY

V30DL50CHM3

Dual Trench MOS Barrier Schottky Rectifier
VISHAY

V30DM120-M3

Low forward voltage drop, low power losses
VISHAY

V30DM120-M3_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VISHAY