V30K45 [VISHAY]

High Current Density Surface-Mount (TMBSÂ®) Trench MOS Barrier Schottky Rectifier;


型号：	V30K45
厂家：	VISHAY
描述：	High Current Density Surface-Mount (TMBSÂ®) Trench MOS Barrier Schottky Rectifier
文件：	总5页 (文件大小：135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V30K45

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

(TMBS^®) Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.30 V at I_F= 5 A

FEATURES

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

FlatPAK 5 x 6

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

1, 2, 3, 4

5, 6, 7, 8

TYPICAL APPLICATIONS

DESIGN SUPPORT TOOLS AVAILABLE

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

45 V

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

AEC-Q101 qualified

I_FSM

V_Fat I_F= 30 A (T_A= 125 °C)

T_Jmax.

240 A

0.46 V

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test 

Package

FlatPAK 5 x 6

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30K45

V3045

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Notes

(1)

(2)

(3)

With infinite heatsink

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 08-Jul-2019

Document Number: 87416

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V30K45

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.42

0.48

0.54

0.30

0.38

0.46

MAX.

UNIT

I_F= 5 A

I_F= 15 A

I_F= 30 A

I_F= 5.0 A

I_F= 15 A

I_F= 30 A

T_A= 25 °C

0.63

(1)

Instantaneous forward voltage

V_F

T_A= 125 °C

0.54

T_A= 25 °C

(2)

Reverse current

_R= 45 V

I_R

T_A= 125 °C

Typical junction capacitance

4.0 V, 1 MHz

C_J

4000

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: pulse width  5 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

(1)(2)

R_JA

Typical thermal resistance

°C/W

(3)

R_JM

2.5

3.5

Notes

(1)

The heat generated must be less than thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Free air, mounted on recommended copper pad area; thermal resistance R_JA- junction-to-ambient

Mounted on infinite heatsink; thermal resistance R_JM- junction-to-mount

(2)

(3)

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

V30K45-M3/H

0.10

1500

6000

1500

6000

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

V30K45-M3/I

V30K45HM3/H ⁽¹⁾

V30K45HM3/I ⁽¹⁾

Note

(1)

AEC-Q101 qualified

Revision: 08-Jul-2019

Document Number: 87416

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V30K45

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

R_thJM= 2.5 °C/W

Axis Title

10000

1000

100

10000

1000

100

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

0.1

0.01

T_J= 25 °C

T_J= -40 °C

T_Mmeasured at cathode

terminal mount, typical values

0.001

0.0001

0.00001

R_thJA= 75 °C/W

100

125

150

100

Ambient / Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics

Axis Title

20.0

10000

10 000

10000

T_J= 25 °C

D = 0.8

f = 1.0 MHz

V_sig= 50 mV_p-p

D = 0.5

15.0

10.0

5.0

D = 0.3

1000

100

1000

100

D = 1.0

D = 0.2

1000

100

D = 0.1

D = t_p/T

t_p

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

100

10000

1000

100

10000

1000

100

Junction to ambient

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.2

0.4

0.6

0.8

0.01

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 08-Jul-2019

Document Number: 87416

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V30K45

Vishay General Semiconductor

www.vishay.com

DIMENSIONS in inches (millimeters)

FlatPAK 5 x 6

0.180 (4.560)

0.030 (0.750)

0.082 (2.080)

8 x b

6 x e

(d1)

(2 x d2)

0.219 (5.550)

0.050 (1.270)

BOTTOM VIEW

0.030 (0.750)

TOP VIEW

PCB FOOTPRINT

SIDE VIEW

INCHES

NOM.

0.039

0.006

0.017

MILLIMETERS

DIM.

MIN.

MAX.

MIN.

0.89

NOM.

0.99

0.15

0.43

MAX.

1.09

(a)

0.035

0.043

0.013

0.008

0.197

0.189

0.154

0.020

0.014

0.209

0.197

0.169

0.32

0.20

5.00

4.80

3.90

0.52

0.35

5.30

5.00

4.30

0.203

0.193

0.161

0.016

0.005

0.244

0.232

0.165

0.144

0.050 BSC

5.15

4.90

4.10

0.40

0.125

6.20

5.90

4.20

3.65

1.27 BSC

(d1)

(d2)

0.238

0.228

0.157

0.250

0.236

0.173

6.05

5.80

4.00

6.35

6.00

4.40

(E3)

(K)

0.039

0.019

0.012

0.128

0°

1.00

0.48

0.30

3.25

0°

0.043

0.031

0.148

10°

1.10

0.80

3.75

10°

0.138

3.50



Notes

•

Dimensioning and tolerancing per ASME Y14.5-2009

Dimensions D1 and E1 do not include mold flash or gate burrs

Dimension (XX) means reference only

Revision: 08-Jul-2019

Document Number: 87416

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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Revision: 01-Jan-2021

Document Number: 91000

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