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V40100C-E3/4W [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A; 双高压Trench MOS势垒肖特基整流器超低VF = 0.38 V在IF = 5 A

V40100C-E3/4W


元器件型号：	V40100C-E3/4W
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 双高压Trench MOS势垒肖特基整流器超低VF = 0.38 V在IF = 5 A 整流二极管瞄准线高压功效局域网
PDF文件：	总5页 (文件大小：168K)
下载文档：	下载PDF数据表文档文件
型号参数：V40100C-E3/4W参数

V40100CHM3/4W

DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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0 VISHAY

V40100CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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12 VISHAY

V40100C-M3/4W

DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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2 VISHAY

V40100C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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11 VISHAY

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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8 VISHAY

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

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59 VISHAY

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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5 VISHAY

V40100G_11

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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6 VISHAY

V40100G_12

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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10 VISHAY

V40100G-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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11 VISHAY

V40100G-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

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21 VISHAY

V40100G-E3/4W

DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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0 VISHAY

V40100GHM3/4W

DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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0 VISHAY

V40100GHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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6 VISHAY

V40100G-M3/4W

DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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0 VISHAY

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