V40120C [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
| 型号： | V40120C |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V40120C, VB40120C & VI40120C
New Product
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.423 V at I = 5 A
F
F
FEATURES
TO-262AA
TO-220AB
• Trench MOS Schottky Technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
3
3
2
2
1
1
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
VI40120C
V40120C
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
PIN 2
CASE
K
• Solder Dip 260 °C, 40 seconds (for TO-220 &
TO-262 package)
TO-263AB
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
TYPICAL APPLICATIONS
2
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
1
VB40120C
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
Case: TO-220AB, TO-262AA & TO263AB
Epoxy meets UL 94V-0 flammability rating
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2 x 20 A
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
VRRM
120 V
IFSM
250 A
VF at IF = 20 A
Tj max.
0.630 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40120C
VB40120C
VI40120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
40
20
IF(AV)
A
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
IFSM
250
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dv/dt
1.0
A
10000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 20 to + 150
Document Number 88937
22-Aug-06
www.vishay.com
1
V40120C, VB40120C & VI40120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
at IR = 1.0 mA Tj = 25 °C
V(BR)
120 (minimum)
-
V
at IF = 5 A
IF = 10 A
IF = 20 A
0.494
0.584
0.768
-
-
Tj = 25 °C
Tj = 125 °C
0.84
(1)
Instantaneous forward voltage per diode
VF
V
at IF = 5 A
IF = 10 A
IF = 20 A
0.423
0.518
0.630
-
-
0.68
Tj = 25 °C
Tj =125°C
11
10
-
-
µA
mA
at VR = 90 V
Reverse current at rated VR per diode (1)
IR
Tj = 25 °C
Tj = 125 °C
31
22
500
40
µA
mA
at VR = 120 V
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40120C
VB40120C
VI40120C
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
V40120C-E3/45
VB40120C-E3/4W
VB40120C-E3/8W
VI40120C-E3/4W
2.248
1.39
45
50/Tube
50/Tube
800/Reel
50/Tube
4W
8W
4W
Tube
1.39
Tape & Reel
Tube
1.458
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
50
18
D = 0.8
D = 0.5
Resistive or Inductive Load
16
14
12
D = 0.3
40
V(B,I)40120C
D = 0.2
D = 1.0
30
10
8
D = 0.1
20
10
0
T
6
4
D = tp/T tp
2
0
0
4
8
12
16
20
24
0
25
50
75
100
125
150
175
Average Forward Current (A)
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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2
Document Number 88937
22-Aug-06
V40120C, VB40120C & VI40120C
Vishay General Semiconductor
10000
300
250
200
T
j
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
Tj = Tj max.
8.3 ms Single Half Sine-Wave
V
1000
150
100
50
0
100
0
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 6. Typical Junction Capacitance Per Diode
10
100
Junction to Case
Tj = 150 °C
1
0.1
Tj = 125 °C
10
Tj = 25 °C
1
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
1000
100
Tj = 150 °C
10
Tj = 125 °C
1
0.1
0.01
Tj = 25 °C
0.001
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
Document Number 88937
22-Aug-06
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3
V40120C, VB40120C & VI40120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
(4.70)
0.185
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.113 (2.87)
0.103 (2.62)
(1.39)
0.045 (1.14)
0.055
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
PIN
2
3
1
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45)
Max.
0.055 (1.40)
0.047 (1.19)
0.250 (6.35)
Min.
30° (Typ)
(REF)
0.055 (1.40)
0.045 (1.14)
K
0.350 (8.89)
0.401 (10.19)
0.330 (8.38)
0.381 (9.68)
0.950 (24.13)
0.920 (23.37)
PIN
0.510 (12.95)
0.470 (11.94)
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 3
PIN 2
HEATSINK
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88937
22-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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