V40PW45CHM3/I [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, DPAK-3/2;型号: | V40PW45CHM3/I |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, DPAK-3/2 功效 瞄准线 二极管 |
文件: | 总5页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V40PW45C
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5 A
FEATURES
• Very low profile - typical height of 1.3 mm
TMBS® eSMP® Series
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
2
SlimDPAK (TO-252AE)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
40 A
45 V
Case: SlimDPAK (TO-252AE)
VRRM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
IFSM
VF at IF = 20 A (TA = 125 °C)
TJ max.
240 A
0.49 V
150 °C
Base P/NHM3
- halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Package
SlimDPAK (TO-252AE)
Common cathode
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40PW45C
UNIT
Device marking code
V40PW45C
Maximum repetitive peak reverse voltage
VRRM
45
40
20
V
A
A
per device
per diode
(1)
Maximum average forward rectified current (Fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
240
A
(2)
Operating junction temperature range
Storage temperature range
TJ
-40 to +150
-55 to +150
°C
°C
TSTG
Notes
(1)
With infinite heatsink
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA
(2)
Revision: 01-Jun-17
Document Number: 87655
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40PW45C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.46
0.50
0.56
0.33
0.39
0.49
-
MAX.
UNIT
IF = 5.0 A
-
-
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
TA = 25 °C
0.64
-
(1)
Maximum instantaneous forward voltage
VF
V
TA = 125 °C
-
0.57
1.2
55
-
TA = 25 °C
(2)
Reverse current
VR = 45 V
IR
mA
pF
TA = 125 °C
18
Typical junction capacitance
4.0 V, 1 MHz
CJ
2350
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40PW45C
UNIT
(1)(2)
RθJA
55
Typical thermal resistance
°C/W
(3)
RθJM
1.5
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
V40PW45C-M3/I
V40PW45CHM3/I (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.20
0.20
I
I
4500
4500
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 01-Jun-17
Document Number: 87655
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40PW45C
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
50.0
TJ = 150 °C
TM = 120 ƱC, RthJM = 1.5 ƱC/W
10
1
40.0
30.0
20.0
10.0
0
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
TA = 25 ƱC, RthJA = 55 ƱC/W
0.01
0.001
10 20 30 40 50 60 70 80 90 100
0
25
50
75
100
125
150
Percent of Rated Peak Reverse Voltage (%)
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
15.0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
1000
100
10
D = 0.5
10.0
5.0
D = 0.3
D = 0.2
D = 1.0
T
D = 0.1
D = tp/T
tp
1
0.0
0.1
1
10
100
0
5
10
15
20
25
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
100
10
1
Junction to Ambient
Junction to Mount
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 01-Jun-17
Document Number: 87655
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40PW45C
Vishay General Semiconductor
www.vishay.com
80
70
60
50
40
30
20
10
0
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
S (cm2)
0
1
2
3
4
5
6
7
8
9
10
Copper Pad Areas (cm2)
Fig. 7 - Typical Resistance Junction to Ambient vs.
Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimDPAK (TO-252AE)
(1.40)
(1.20)
0.055
0.047
(0.41)
(0.25)
0.016
0.010
(6.32)
(6.08)
0.249
0.239
(0.70)
(0.30)
0.028
0.012
(6.72)
(6.48)
0.265
0.255
(9.40)
(8.60)
0.370
0.339
(0.20)
(0.00)
(1.40)
(1.00)
0.008
0.000
0.055
0.039
0.090
(2.29)
NOM.
0.180
(4.57)
NOM.
Mounting Pad Layout
0.240
MIN.
(5.70)
(5.30)
0.224
0.209
(6.10)
0.205
(5.20)
0.235
(5.97)
NOM.
MIN.
0.386
(9.80)
REF.
0.075
(1.90)
MIN.
MIN.
(0.90)
(0.70)
0.035
0.028
0.090
(2.29)
0.055
(1.40)
NOM.
Revision: 01-Jun-17
Document Number: 87655
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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