V4P22C [VISHAY]

High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier;


型号：	V4P22C
厂家：	VISHAY
描述：	High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier
文件：	总5页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V4P22C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.58 V at I_F= 1 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SMPC (TO-277A)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

ADDITIONAL RESOURCES

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 2.0 A

200 V

Base P/N-M3

halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

60 A

Base P/NHM3

- halogen-free, RoHS-compliant and

V_Fat I_F= 2 A

T_Jmax.

0.65 V

175 °C

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V4P22C

V422C

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

4.0

Maximum average forward rectified current per device (fig. 1)

(2)

I_F(AV)

2.8

Peak forward surge current 8.3 ms single half sine-wave 

superimposed on rated load per diode

I_FSM

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 24-Jul-2019

Document Number: 87499

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V4P22C

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 1 A

0.74

0.79

0.58

0.65

0.001

0.3

0.87

T_A= 25 °C

I_F= 2 A

I_F= 1 A

I_F= 2 A

Instantaneous forward voltage

per diode

(1)

V_F

T_A= 125 °C

0.73

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

V_R= 160 V

(2)

Reverse current per diode

I_R

0.05

V_R= 200 V

0.7

Typical junction capacitance per diode

4.0 V, 1 MHz

C_J

125

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: pulse width  40 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

V4P22C

UNIT

°C/W

(1)(2)

R_JA

Typical thermal resistance per device

(3)

R_JM

Notes

(1)

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Free air, mounted on recommended copper pad area, 2 oz., FR4 PCB, thermal resistance R_JA- junction-to-ambient

Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R_JM- junction-to-mount

(2)

(3)

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V4P22C-M3/H

V4P22C-M3/I

V4P22CHM3/H ⁽¹⁾

V4P22CHM3/I ⁽¹⁾

0.10

1500

6500

1500

6500

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Note

(1)

AEC-Q101 qualified

Revision: 24-Jul-2019

Document Number: 87499

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V4P22C

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 C unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

R_thJM= 5 °C/W

0.1

R_thJA= 85 °C/W

T_J= 175 °C

T_J= 150 °C

0.01

T_J= 125 °C

T_J= 25 °C

T_J= 100 °C

0.001

0.0001

0.00001

0.000001

T_J= -40 °C

T_Mmeasured at cathode

terminal mount typical values

100 125 150 175

100

Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Axis Title

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

10000

1000

100

10000

1000

100

D = 0.8

T_J= 25 °C,

f = 1.0 MHz,

D = 0.5

_sig= 50 mV_p-p

D = 0.3

D = 0.2

1000

100

D = 1.0

D = 0.1

D = t_p/T

t_p

1000

0.5

1.5

2.5

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Axis Title

10000

100

10000

T_J= 175 °C

Junction-to-ambient

T_J= 150 °C

T_J= 125 °C

1000

100

1000

100

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

Instantaneous Forward Voltage (V)

0.1

100

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance

Revision: 24-Jul-2019

Document Number: 87499

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V4P22C

Vishay General Semiconductor

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMPC (TO-277A)

0.187 (4.75)

0.175 (4.45)

0.016 (0.40)

0.006 (0.15)

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

0.047 (1.20)

0.039 (1.00)

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

Mounting Pad Layout

0.087 (2.20)

0.075 (1.90)

0.189 (4.80)

MIN.

0.189 (4.80)

0.173 (4.40)

0.186 (4.72)

MIN.

0.268

(6.80)

0.155 (3.94)

NOM.

0.030 (0.75) NOM.

0.049 (1.24)

0.037 (0.94)

0.050 (1.27)

MIN.

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

0.041

(1.04)

0.055 (1.40)

MIN.

Conform to JEDEC TO-277A

Revision: 24-Jul-2019

Document Number: 87499

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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Revision: 01-Jan-2021

Document Number: 91000

V4P22C [VISHAY]

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