V8P45 [VISHAY]
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier;
| 型号： | V8P45 |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V8P45
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.34 V at IF = 4 A
FEATURES
• Very low profile - typical height of 1.1 mm
eSMP® Series
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
K
Anode 1
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3
D
3D Models
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
45 V
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IFSM
VF at IF = 8.0 A (TA = 125 °C)
TJ max.
140 A
0.41 V
150 °C
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
Package
SMPC (TO-277A)
Single
Circuit configuration
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P45
UNIT
Device marking code
V845
Maximum repetitive peak reverse voltage
VRRM
45
8.0
4.3
V
A
(1)
IF
Maximum average forward rectified current (fig. 1)
(2)
IF
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
140
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 30-Oct-2019
Document Number: 87710
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P45
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.44
0.49
0.34
0.41
-
MAX.
-
UNIT
IF = 4.0 A
TA = 25 °C
IF = 8.0 A
IF = 4.0 A
IF = 8.0 A
0.58
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.49
0.6
20
TA = 25 °C
(2)
Reverse current
VR = 45 V
IR
mA
TA = 125 °C
5.0
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P45
UNIT
(1)(2)
RJA
75
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Free air mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
V8P45-M3/86A
0.10
0.10
0.10
0.10
86A
87A
H
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V8P45-M3/87A
V8P45HM3_A/H (1)
V8P45HM3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
9
8
7
6
5
4
3
2
1
0
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
TM = 132 °C, RθJM = 4 °C/W
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
TA = 25 °C, RθJA = 75 °C/W
D = 0.1
T
D = tp/T
tp
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Mount Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 30-Oct-2019
Document Number: 87710
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P45
www.vishay.com
Vishay General Semiconductor
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
TA = 150 °C
Vsig = 50 mVp-p
10
1
TA = 125 °C
TA = 100 °C
TA = 25 °C
TA = -40 °C
0.1
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
100
10
1
Junction to Ambient
TA = 100 °C
TA = 150 °C
TA = 125 °C
0.1
0.01
TA = 25 °C
0.001
TA = -40 °C
0.0001
0.00001
0.01
0.1
1
10
100
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 30-Oct-2019
Document Number: 87710
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P45
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 30-Oct-2019
Document Number: 87710
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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