V8PM10S-M3/I [VISHAY]
DIODE SCHOTTKY 100V 8A TO277A;
| 型号： | V8PM10S-M3/I |
| 厂家： | 
VISHAY |
| 描述： | DIODE SCHOTTKY 100V 8A TO277A |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V8PM10S
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.50 V at IF = 4 A
FEATURES
®
eSMP Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
1
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
K
Anode 1
Anode 2
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
click logo to get started
DESIGN SUPPORT TOOLS
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Models
Available
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
8 A
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
VRRM
100 V
120 A
0.62 V
175 °C
IFSM
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
halogen-free, RoHS-compliant, and
VF at IF = 8 A (125 °C)
TJ max.
-
Package
SMPC (TO-277A)
Single
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Circuit configuration
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8PM10S
8M10S
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF(AV)
8
Maximum DC forward current
(2)
IF(AV)
3.5
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Operating junction and storage temperature range
TJ (3), TSTG
-40 to +175
°C
Notes
(1)
(2)
(3)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended pad area
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Revision: 30-Jan-2019
Document Number: 87532
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PM10S
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.58
0.70
0.50
0.62
0.01
2
MAX.
UNIT
IF = 4 A
-
0.78
-
TA = 25 °C
IF = 8 A
IF = 4 A
IF = 8 A
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.70
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
V
R = 70 V
-
(2)
Reverse current
IR
mA
pF
-
0.2
10
-
VR = 100 V
4
Typical junction capacitance
4.0 V, 1 MHz
CJ
860
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V8PM10S
UNIT
(1)(2)
RJA
80
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient
Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance RJM - junction to mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
V8PM10S-M3/H
V8PM10S-M3/I
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
0.10
0.10
0.10
H
I
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V8PM10SHM3/H (1)
V8PM10SHM3/I (1)
H
I
Note
(1)
AEC-Q101 qualified
Revision: 30-Jan-2019
Document Number: 87532
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PM10S
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJM = 153 ƱC ,RthJM = 4 ƱC/W
1
0.1
0.01
TJ = 25 °C
TJ = 25 ƱC, RthJA = 80 ƱC/W
0.001
0.0001
0.00001
0.000001
TJ = -40 °C
TM measured at cathode terminal
mount typical values
0
25
50
75
100
125
150
175
10 20 30 40 50 60 70 80 90 100
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
7.0
6.0
5.0
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
D = 0.8
Vsig = 50 mVp-p
D = 0.5
D = 0.3
D = 1.0
4.0
3.0
2.0
1.0
0.0
D = 0.2
T
D = 0.1
D = tp/T
tp
10
0
1
2
3
4
5
6
7
8
9
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
100
10
1
Junction to Ambient
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 30-Jan-2019
Document Number: 87532
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8PM10S
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 30-Jan-2019
Document Number: 87532
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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