VB10170C [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | VB10170C |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB10170C
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
FEATURES
TMBS®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
2
please see www.vishay.com/doc?99912
1
VB10170C
TYPICAL APPLICATIONS
PIN 1
PIN 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
HEATSINK
MECHANICAL DATA
Case: TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IF(AV)
2 x 5 A
170 V
80 A
VRRM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IFSM
VF at IF = 5.0 A
TJ max.
0.65 V
175 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10170C
UNIT
Maximum repetitive peak reverse voltage
VRRM
170
10
5
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 175
Revision: 11-Jul-12
Document Number: 89948
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10170C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 2.5 A
0.74
0.84
0.57
0.65
0.3
-
1.03
-
TA = 25 °C
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
0.74
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 136 V
VR = 170 V
0.9
-
(2)
Reverse current per diode
IR
-
90
10
1.3
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10170C
3.0
UNIT
per diode
per device
Typical thermal resistance
RJC
°C/W
1.7
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB10170C-E3/4W
VB10170C-E3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.38
1.38
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
D = 0.8
D = 1.0
D = 0.5
RthJ-A=RthJ-C
D = 0.3
D = 0.2
5
D = 0.1
4
3
2
1
0
T
D = tp/T
tp
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 11-Jul-12
Document Number: 89948
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10170C
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
TA = 175 °C
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.6 0.8 1.0
0.1
10
0
0.2 0.4
1.2 1.4 1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 175 °C
10
1
0.1
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.01
0.001
0.0001
TA = 25 °C
60
0.1
20
40
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.591 (15.00)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 11-Jul-12
Document Number: 89948
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 12-Mar-12
Document Number: 91000
1
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