VB20120SG-M3 [VISHAY]
High efficiency operation;
| 型号： | VB20120SG-M3 |
| 厂家： | 
VISHAY |
| 描述： | High efficiency operation |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB20120SG-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
NC
TYPICAL APPLICATIONS
VB20120SG
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
NC
A
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-263AB
Package
TO-263AB
20 A
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
VRRM
120 V
IFSM
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
VF at IF = 20 A
TJ max.
0.78 V
M3 suffix meets JESD 201 class 1A whisker test
150 °C
Single die
Polarity: As marked
Diode variations
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VB20120SG
UNIT
Maximum repetitive peak reverse voltage
120
20
V
A
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
A
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.62
0.81
1.20
0.54
0.65
0.78
10
-
IF = 10 A
IF = 20 A
IF = 5 A
TA = 25 °C
-
1.33
-
Instantaneous forward voltage (1)
VF
V
IF = 10 A
IF = 20 A
TA = 125 °C
-
0.88
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 60 V
7
-
Reverse current (2)
IR
-
250
25
VR = 120 V
12
mA
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
Revision: 14-May-13
Document Number: 87968
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20120SG-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB20120G
UNIT
Typical thermal resistance
RJC
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB20120SG-M3/4W
VB20120SG-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.38
1.38
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
100
TA = 150 °C
Resistive or Inductive Load
20
T
A = 125 °C
10
15
10
TA = 100 °C
1
TA = 25 °C
5
Mounted on Specific Heatsink
0
0.1
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
35
30
25
20
15
10
5
100
D = 0.8
D = 0.5
TA = 150 °C
D = 0.3
D = 0.2
10
TA = 125 °C
D = 1.0
1
D = 0.1
TA = 100 °C
0.1
T
0.01
TA = 25 °C
D = tp/T
16
tp
0
0.001
0
4
8
12
20
24
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 14-May-13
Document Number: 87968
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20120SG-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
10
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
NC
K
A
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 14-May-13
Document Number: 87968
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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