VB30100SG-M3 [VISHAY]
High efficiency operation;型号: | VB30100SG-M3 |
厂家: | VISHAY |
描述: | High efficiency operation |
文件: | 总4页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VB30100SG-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
TO-263AB
• High efficiency operation
• Low thermal resistance
K
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
NC
VB30100SG
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
NC
A
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Package
TO-263AB
30 A
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
100 V
commercial grade
IFSM
250 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
VF at IF = 30 A
TJ max.
0.76 V
M3 suffix meets JESD 201 class 1A whisker test
150 °C
Single die
Polarity: As marked
Diode variation
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VB30100SG
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
100
30
V
A
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
250
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.50
0.60
0.92
0.44
0.55
0.76
8.8
-
IF = 10 A
IF = 30 A
IF = 5 A
TA = 25 °C
-
1.00
-
Instantaneous forward voltage (1)
VF
V
IF = 10 A
IF = 30 A
TA = 125 °C
-
0.83
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
6.5
-
Reverse current (2)
IR
43
350
35
VR = 100 V
18
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 15-May-13
Document Number: 87986
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100SG-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30100SG
UNIT
Typical thermal resistance per leg
RJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB30100SG-M3/4W
VB30100SG-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.37
1.37
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
100
Resistive or Inductive Load
TA = 150 °C
30
25
20
15
10
5
TA = 125 °C
10
TA = 25 °C
1
0
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
32
28
24
20
16
12
8
100
D = 0.8
D = 0.5
TA = 150 °C
D = 0.3
D = 0.2
10
D = 1.0
TA = 125 °C
D = 0.1
1
0.1
T
T
A = 25 °C
0.01
4
D = tp/T
24
tp
0
0.001
0
4
8
12
16
20
28
32
36
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 15-May-13
Document Number: 87986
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30100SG-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
1
0.1
0.01
0.001
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
NC
K
A
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 15-May-13
Document Number: 87986
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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