VB30M120C-M3/I [VISHAY]
Dual High Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | VB30M120C-M3/I |
| 厂家： | 
VISHAY |
| 描述： | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VB30M120C
Vishay General Semiconductor
www.vishay.com
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
FEATURES
TMBS®
D2PAK (TO-263AB)
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Available
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
VB30M120C
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
click logo to get started
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Models
Available
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
Base P/N-M3
- halogen-free, RoHS-compliant, and
IF(AV)
2 x 15 A
120 V
commercial grade
VRRM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
IFSM
150 A
VF at IF = 15 A
TJ max.
0.68 V
150 °C
Polarity: as marked
Package
D2PAK (TO-263AB)
Circuit configuration
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30M120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
30
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Revision: 20-Jun-2018
Document Number: 89467
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30M120C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.60
0.67
0.87
0.52
0.57
0.68
3.5
2
MAX.
UNIT
IF = 5 A
-
IF = 7.5 A
IF = 15 A
IF = 5 A
TA = 25 °C
-
0.98
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 7.5 A
IF = 15 A
TA = 125 °C
-
0.76
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 90 V
-
(2)
Reverse current per diode
IR
-
800
27
VR = 120 V
5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 20 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB30M120C
2.2
UNIT
Typical thermal resistance per diode
RJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
TO-263AB
PREFERRED P/N
VB30M120C-E3/4W
VB30M120C-E3/8W
VB30M120C-M3/I
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.37
1.37
1.37
4W
8W
I
800/reel
Tape and reel
Tape and reel
800/reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
14
40
D = 0.8
Resistive or Inductive Load
D = 0.5
D = 0.3
D = 0.2
12
10
8
35
30
25
20
15
10
5
D = 0.1
D = 1.0
6
T
4
2
D = tp/T
tp
Mounted on Specific Heatsink
25 50 75 100
0
0
0
2
4
6
8
10 12 14 16 18
0
125
150
175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Jun-2018
Document Number: 89467
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB30M120C
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
10
1
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
0.0001
TA = 25 °C
1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
(10.66)
0.245 (6.22)
MIN
MIN.
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591(15.00)
0.670 (17.02)
0.591 (15.00)
K
1
2
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 20-Jun-2018
Document Number: 89467
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
相关型号：
VB40100C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
VISHAY
VB40100C-E3/4W
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
VISHAY
VB40100C-E3/8W
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
VISHAY
©2020 ICPDF网 联系我们和版权申明