VBT1045C [VISHAY]

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier; 双路低压Trench MOS势垒肖特基整流器
VBT1045C
型号: VBT1045C
厂家: VISHAY    VISHAY
描述:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
双路低压Trench MOS势垒肖特基整流器

文件: 总4页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
VBT1045C  
Vishay General Semiconductor  
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.34 V at IF = 2.5 A  
FEATURES  
TMBS®  
TO-263AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C  
• Not recommended for PCB bottom side wave mounting  
2
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
1
VBT1045C  
PIN 1  
PIN 2  
K
TYPICAL APPLICATIONS  
HEATSINK  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
IF(AV)  
2 x 5.0 A  
45 V  
VRRM  
IFSM  
100 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 5.0 A  
TJ max.  
0.41 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VBT1045C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
45  
10  
5
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 89358  
Revision: 26-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
New Product  
VBT1045C  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.44  
0.49  
0.34  
0.41  
-
MIN.  
-
UNIT  
IF = 2.5 A  
TA = 25 °C  
IF = 5.0 A  
IF = 2.5 A  
IF = 5.0 A  
0.58  
-
(1)  
Instantaneous forward voltage per diode  
VF  
V
TA = 125 °C  
0.50  
500  
15  
TA = 25 °C  
μA  
(2)  
Reverse current per diode  
VR = 45 V  
IR  
TA = 125 °C  
5
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VBT1045C  
3.5  
UNIT  
per diode  
per device  
Typical thermal resistance  
RθJC  
°C/W  
2.5  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-263AB  
TO-263AB  
PREFERRED P/N  
VBT1045C-E3/4W  
VBT1045C-E3/8W  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
1.38  
1.38  
4W  
8W  
800/reel  
Tape and reel  
RATINGS AND CHARACTERISTICS CURVES  
(TA = 25 °C unless otherwise noted)  
12  
10  
8
4.0  
3.5  
3.0  
D = 0.5  
D = 0.8  
D = 0.3  
D = 0.2  
2.5  
2.0  
1.5  
1.0  
0.5  
0
D = 1.0  
6
D = 0.1  
4
T
2
D = tp/T  
tp  
0
100  
110  
120  
130  
140  
150  
0
1
2
3
4
5
6
Case Temperature (°C)  
Average Forward Current (A)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 2 - Forward Power Loss Characteristics Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 89358  
Revision: 26-Oct-10  
New Product  
VBT1045C  
Vishay General Semiconductor  
100  
10  
1
10 000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TA = 150 °C  
TA = 125 °C  
1000  
TA = 100 °C  
TA = 25 °C  
0.1  
100  
0.1  
1
10  
100  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
10  
Junction to Case  
TA = 150 °C  
10  
TA = 125 °C  
TA = 100 °C  
1
0.1  
1
0.01  
0.001  
TA = 25 °C  
0.1  
0.01  
0.1  
1
10  
100  
20  
40  
60  
80  
100  
t - Pulse Duration (s)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 4 - Typical Reverse Characteristics Per Diode  
Fig. 6 - Typical Transient Thermal Impedance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-263AB  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
0.160 (4.06)  
Mounting Pad Layout  
0.055 (1.40)  
0.045 (1.14)  
0.42 (10.66) MIN.  
K
0.055 (1.40)  
0.047 (1.19)  
0.33 (8.38) MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
2
0.591 (15.00)  
0.670 (17.02)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.591 (15.00)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.037 (0.940)  
0.027 (0.686)  
0.15 (3.81) MIN.  
0.105 (2.67)  
0.095 (2.41)  
0.08 (2.032) MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
Document Number: 89358  
Revision: 26-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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