VBT2045C-E3-4W [VISHAY]
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier; 双路低压Trench MOS势垒肖特基整流器
| 型号： | VBT2045C-E3-4W |
| 厂家： | 
VISHAY |
| 描述： | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VBT2045C
Vishay General Semiconductor
www.vishay.com
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
1
VBT2045C
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 10 A
45 V
VRRM
Base P/N-E3 - RoHS compliant, commercial grade
IFSM
160 A
0.41 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045C
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
20
10
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
160
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Revision: 26-Sep-11
Document Number: 89359
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VBT2045C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.44
0.49
0.33
0.41
-
-
TA = 25 °C
IF = 10 A
IF = 5 A
0.58
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
IF = 10 A
0.52
2000
30
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 45 V
IR
TA = 125 °C
10
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045C
3.0
UNIT
per diode
per device
Typical thermal resistance
RJC
°C/W
2.0
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VBT2045C-E3/4W
VBT2045C-E3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.38
1.38
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16
12
8
6
5
4
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
T
3
D = 0.1
2
1
0
4
D = tp/T
tp
0
100
110
120
130
140
150
0
2
4
6
8
10
12
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 26-Sep-11
Document Number: 89359
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VBT2045C
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
1000
TA = 100 °C
TA = 25 °C
0.1
100
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 150 °C
10
1
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.591 (15.00)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 26-Sep-11
Document Number: 89359
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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