VBT2045CBP-M3 [VISHAY]
Trench MOS Schottky technology;
| 型号： | VBT2045CBP-M3 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBT2045CBP-M3
Vishay General Semiconductor
www.vishay.com
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
TO-263AB
K
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass mode application
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
VBT2045CBP
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
HEATSINK
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Package
TO-263AB
2 x 10 A
45 V
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
IFSM
160 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A
0.41 V
T
OP max. (AC mode)
150 °C
TJ max. (DC forward current)
Diode variation
200 °C
Polarity: As marked
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045CBP
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
20
10
V
per device
per diode
(1)
Maximum average forward rectified current (fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
160
Operating junction and storage temperature range (AC mode)
TOP, TSTG
- 40 to + 150
°C
°C
Junction temperature in DC forward current
without reverse bias, t 1 h
(2)
TJ
200
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 30-Apr-13
Document Number: 87961
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2045CBP-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.44
0.49
0.33
0.41
-
MAX.
-
UNIT
IF = 5 A
TA = 25 °C
IF = 10 A
IF = 5 A
0.58
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
IF = 10 A
0.52
2000
30
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 45 V
IR
TA = 125 °C
10
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045CBP
UNIT
per diode
per device
3.0
2.0
Typical thermal resistance
RJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VBT2045CBP-M3/4W
VBT2045CBP-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.38
1.38
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
5
4
3
24
20
16
12
8
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
2
1
0
DC Forward Current at
4
D = tp/T
tp
Thermal Equilibrium
0
0
2
4
6
8
10
12
100
120
140
160
180
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 30-Apr-13
Document Number: 87961
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2045CBP-M3
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Junction to Case
TA = 150 °C
10
1
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 30-Apr-13
Document Number: 87961
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 13-Jun-16
Document Number: 91000
1
相关型号：
VBT2045CBP-M3/4W
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,
VISHAY
VBT2045CBP-M3/8W
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,
VISHAY
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