VBT2080S-M3 [VISHAY]
High efficiency operation;型号: | VBT2080S-M3 |
厂家: | VISHAY |
描述: | High efficiency operation |
文件: | 总4页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VBT2080S-M3
Vishay General Semiconductor
www.vishay.com
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
NC
VBT2080S
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
NC
A
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Package
TO-263AB
20 A
IF(AV)
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
80 V
commercial grade
IFSM
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 20 A
TJ max.
0.70 V
150 °C
Single die
Diode variation
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VBT2080S
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
80
20
V
A
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.52
0.61
0.80
0.46
0.54
0.70
30
-
-
IF = 10 A
IF = 20 A
IF = 5 A
TA = 25 °C
0.92
-
Instantaneous forward voltage (1)
VF
V
IF = 10 A
IF = 20 A
TA = 125 °C
-
0.78
700
35
TA = 25 °C
μA
Reverse current (2)
VR = 80 V
IR
TA = 125 °C
20
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 14-May-13
Document Number: 87977
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2080S-M3
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2080S
UNIT
Typical thermal resistance
RJC
1.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VBT2080S-M3/4W
VBT2080S-M3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.38
1.38
4W
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
24
Resistive or Inductive Load
20
TA = 150 °C
10
1
TA = 125 °C
16
12
8
TA = 100 °C
TA = 25 °C
4
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
20
100
D = 0.5 D = 0.8
TA = 150 °C
D = 0.3
D = 0.2
D = 0.1
18
16
14
12
10
8
10
TA = 125 °C
D = 1.0
1
TA = 100 °C
0.1
T
6
TA = 25 °C
4
0.01
2
D = tp/T
16
tp
20
0
0.001
0
4
8
12
24
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 14-May-13
Document Number: 87977
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT2080S-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
1
10
0.1
0.1
0.01
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.624 (15.85)
0.320 (8.13)
NC
K
A
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 14-May-13
Document Number: 87977
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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