VBT3080S-M3 [VISHAY]

High efficiency operation;


型号：	VBT3080S-M3
厂家：	VISHAY
描述：	High efficiency operation 二极管
文件：	总4页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VBT3080S-M3

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.39 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-263AB

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VBT3080S

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

MECHANICAL DATA

Case: TO-263AB

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Package

TO-263AB

30 A

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_F(AV)

commercial grade

V_RRM

80 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

200 A

V_Fat I_F= 30 A

T_Jmax.

0.73 V

150 °C

Single die

Polarity: As marked

Diode variation

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

VBT3080S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

200

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 5 A

0.47

0.61

0.82

0.39

0.57

0.73

I_F= 15 A

I_F= 30 A

I_F= 5 A

T_A= 25 °C

0.95

Instantaneous forward voltage ⁽¹⁾

V_F

I_F= 15 A

I_F= 30 A

T_A= 125 °C

0.82

1000

T_A= 25 °C

μA

Reverse current ⁽²⁾

V_R= 80 V

I_R

T_A= 125 °C

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 14-May-13

Document Number: 87979

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBT3080S-M3

Vishay General Semiconductor

www.vishay.com

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT3080S

UNIT

Typical thermal resistance

R_JC

1.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

ITO-220AB

TO-263AB

PREFERRED P/N

VFT3080S-M3/4W

VBT3080S-M3/4W

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

1.75

1.37

Tube

50/tube

RATINGS AND CHARACTERISTICS CURVES 

(T_A= 25 °C unless otherwise noted)

100

Resistive or Inductive Load

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

Mounted on Specific Heatsink

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Instantaneous Forward Voltage (V)

100

125

150

175

Case Temperature (°C)

Fig. 1 - Forward Current Derating Curve

Fig. 3 - Typical Instantaneous Forward Characteristics

100

D = 0.8

D = 0.5

D = 0.3

T_A= 150 °C

T_A= 125 °C

D = 0.2

D = 0.1

T_A= 100 °C

D = 1.0

0.1

T_A= 25 °C

0.01

D = t_p/T

t_p

0.001

90 100

Percent of Rated Peak Reverse Voltage (%)

Average Forward Current (A)

Fig. 2 - Forward Power Loss Characteristics

Fig. 4 - Typical Reverse Characteristics

Revision: 14-May-13

Document Number: 87979

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBT3080S-M3

Vishay General Semiconductor

www.vishay.com

10 000

1000

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

Junction to Case

0.1

0.01

0.1

100

0.1

100

Reverse Voltage (V)

t - Pulse Duration (s)

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-263AB

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

0.160 (4.06)

Mounting Pad Layout

0.055 (1.40)

0.045 (1.14)

0.42 (10.66) MIN.

0.055 (1.40)

0.047 (1.19)

0.33 (8.38) MIN.

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591 (15.00)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.037 (0.940)

0.027 (0.686)

0.15 (3.81) MIN.

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.140 (3.56)

0.110 (2.79)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

0.095 (2.41)

Revision: 14-May-13

Document Number: 87979

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

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

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Revision: 13-Jun-16

Document Number: 91000

相关型号：

VBT3080S-M3/4W

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 80V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2