VBT4045C-E3_15 [VISHAY]

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier;


型号：	VBT4045C-E3_15
厂家：	VISHAY
描述：	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
文件：	总4页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VBT4045C-E3

Vishay General Semiconductor

www.vishay.com

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.28 V at I_F= 5.0 A

FEATURES

TMBS^®

TO-263AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VBT4045C

TYPICAL APPLICATIONS

PIN 1

PIN 2

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

HEATSINK

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

45 V

V_RRM

I_FSM

240 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Package

0.41 V

150 °C

TO-263AB

Polarity: As marked

Diode variations

Common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT4045C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 09-Sep-13

Document Number: 89361

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBT4045C-E3

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 5 A

0.41

0.44

0.50

0.28

0.33

0.41

I_F= 10 A

I_F= 20 A

I_F= 5 A

T_A= 25 °C

0.58

(1)

Instantaneous forward voltage per diode

V_F

I_F= 10 A

I_F= 20 A

T_A= 125 °C

0.50

3000

T_A= 25 °C

μA

(2)

Reverse current per diode

V_R= 45 V

I_R

T_A= 125 °C

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT4045C

1.5

UNIT

per diode

per device

Typical thermal resistance

R_JC

°C/W

0.8

ORDERING INFORMATION (Example)

PACKAGE

TO-263AB

PREFERRED P/N

VBT4045C-E3/4W

VBT4045C-E3/8W

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

1.38

800/reel

Tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

D = 0.8

D = 0.5

D = 0.3

D = 0.2

D = 0.1

D = 1.0

D = t_p/T

t_p

100

110

120

130

140

150

Case Temperature (°C)

Average Forward Current (A)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Revision: 09-Sep-13

Document Number: 89361

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBT4045C-E3

Vishay General Semiconductor

www.vishay.com

100

100 000

10 000

1000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 150 °C

T_A= 100 °C

T_A= 125 °C

T_A= 25 °C

0.1

100

0.1

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

T_A= 150 °C

Junction to Case

T_A= 125 °C

T_A= 100 °C

0.1

T_A= 25 °C

0.01

0.001

0.1

0.01

0.1

100

t - Pulse Duration (s)

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-263AB

Mounting Pad Layout

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

0.160 (4.06)

0.42 (10.66) MIN.

0.055 (1.40)

0.045 (1.14)

0.33 (8.38) MIN.

0.055 (1.40)

0.047 (1.19)

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15 (3.81) MIN.

0.037 (0.940)

0.027 (0.686)

0.08 (2.032) MIN.

0.105 (2.67)

0.095 (2.41)

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

Revision: 09-Sep-13

Document Number: 89361

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 02-Oct-12

Document Number: 91000

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