VCUT0714A-HD1_10 [VISHAY]
Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection Diode in LLP1006-2L; 双向非对称（ BIAS ）单线路ESD保护二极管LLP1006-2L
| 型号： | VCUT0714A-HD1_10 |
| 厂家： | 
VISHAY |
| 描述： | Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection Diode in LLP1006-2L |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCUT0714A-HD1
Vishay Semiconductors
Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection
Diode in LLP1006-2L
FEATURES
• Ultra compact LLP1006-2L
• Low package height < 0.4 mm
1
2
• 1-line ESD-protection
• Working range - 7 V up to + 14 V or - 14 V up to
+ 7 V
209ꢀ0
208ꢀꢀ
• Low leakage current < 0.1 µA
• Low load capacitance typical CD = 8 pF
MARKING (example only)
• ESD-protection acc. IEC 61000-4-2
2ꢀ kV contact discharge
30 kV air discharge
XY
21121
• Soldering can be checked by standard vision inspection.
No X-ray necessary
Bar = pin 1 marking
Y = type code (see table below)
X = date code
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Compliant to RoHS Directive 2002/9ꢀ/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
(8 mm TAPE ON 7" REEL)
ORDERING CODE
VCUT0714A-HD1
VCUT0714A-HD1-GS08
8000
8000
PACKAGE DATA
PACKAGE
NAME
TYPE
CODE
MOLDING COMPOUND
FLAMMABILITY RATING SENSITIVITY LEVEL
MOISTURE
SOLDERING
CONDITIONS
DEVICE NAME
WEIGHT
MSL level 1
UL 94 V-0
VCUT0714A-HD1 LLP1006-2L
B
0.72 mg
260 °C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS VCUT0714A-02Z
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to pin 2
acc. IEC 61000-4-ꢀ, 8/20 µs/single shot
ꢀ
2
A
Peak pulse current
IPPM
Pin 2 to pin 1
acc. IEC 61000-4-ꢀ, 8/20 µs/single shot
A
Pin 1 to pin 2
acc. IEC 61000-4-ꢀ, 8/20 µs/single shot
63
ꢀ4
W
W
Peak pulse power
ESD immunity
PPP
Pin 2 to pin 1
acc. IEC 61000-4-ꢀ, 8/20 µs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
2ꢀ
kV
kV
°C
°C
VESD
30
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
TSTG
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81801
Rev. 1.6, 26-Oct-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
1
VCUT0714A-HD1
Bidirectional Asymmetrical (BiAs) Single
Line ESD-Protection Diode in LLP1006-2L
Vishay Semiconductors
CUT THE SPIKES WITH VCUT0714A-HD1
The VCUT0714A-HD1 is a bidirectional but asymmetrical (BiAs) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0714A-HD1 offers a high
isolation (low leakage current, small capacitance) within the specified working range of - 7 V to + 14 V or - 14 V and + 7 V. Due
to the short leads and small package size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients
like an ESD-strike can be clamped with minimal over- or undershoots.
- 7 V ≤ VRW ≤ + 14 V
- 14 V ≤ VRW ≤ + 7 V
Ground
Ground
22286
ELECTRICAL CHARACTERISTICS VCUT0714A-HD1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I = 0.1 µA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
MAX.
UNIT
lines
V
Protection paths
-
-
-
1
-
Reverse working voltage
Reverse current
14
at V = 14 V
-
-
0.1
-
µA
V
Reverse breakdown voltage
at I = 1 mA
VBR
14.ꢀ
-
at IPP = 1 A
-
-
-
-
-
27
30
8.ꢀ
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 2 A
-
V
at V = 0 V; f = 1 MHz
at V = 7 V; f = 1 MHz
8
4
pF
pF
Note
•
Ratings at 2ꢀ °C, ambient temperature unless otherwise specified. Measured from pin 2 to pin 1.
ELECTRICAL CHARACTERISTICS VCUT0714A-HD1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I = 0.1 µA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
MAX.
UNIT
lines
V
Protection paths
-
7
-
-
-
1
-
Reverse working voltage
Reverse current
at V = 7 V
-
0.1
-
µA
V
Reverse breakdown voltage
at I = 1 mA
VBR
7.3
-
-
at IP2 = 1 A
-
13
17
8.ꢀ
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = ꢀ A
-
-
V
at V = 0 V; f = 1 MHz
at V = 3.ꢀ V; f = 1 MHz
-
8
6.4
pF
pF
-
Note
Ratings at 2ꢀ °C, ambient temperature unless otherwise specified. Measured from pin 1 to pin 2.
•
www.vishay.com
2
For technical questions, contact: ESDprotection@vishay.com
Document Number: 81801
Rev. 1.6, 26-Oct-10
VCUT0714A-HD1
Bidirectional Asymmetrical (BiAs) Single
Line ESD-Protection Diode in LLP1006-2L
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 2ꢀ °C, unless otherwise specified)
120 %
100 %
80 %
2ꢀ
20
1ꢀ
10
ꢀ
Rise time = 0.7 ns to 1 ns
Pin 2 to 1
60 %
ꢀ3 %
Pin 1 to 2
40 %
27 %
20 %
0 %
0
- 10 0 10 20 30 40 ꢀ0 60 70 80 90 100
0.01 0.1
1
10
100 1000 10 000
IR (µA)
20ꢀꢀ7
Time (ns)
20ꢀ77
Fig. 1 - ESD Discharge Current Wave Form
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
acc. IEC 61000-4-2 (330 Ω/1ꢀ0 pF)
3ꢀ
8 µs to 100 %
100 %
80 %
60 %
40 %
20 %
0 %
Pin 2 to 1
30
2ꢀ
VC
20
20 µs to ꢀ0 %
1ꢀ
Pin 1 to 2
10
Measured acc. IEC 61000-4-ꢀ
ꢀ
(8/20 µs - wave form)
0
0
10
20
30
40
0
1
2
3
4
ꢀ
6
7
20ꢀ48
20ꢀ78
Time (µs)
IPP (A)
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-ꢀ
Fig. ꢀ - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
80
9
Acc. IEC 61000-4-2
f = 1 MHz
70
60
ꢀ0
40
30
20
10
0
8
+ 8 kV
contact discharge
7
6
ꢀ
4
3
2
1
0
Pin 1 to 2
Pin 2 to 1
Pin 1 to 2
- 10
0
2
4
6
8
10 12 14 16
- 10
0
10 20 30 40 ꢀ0 60 70 80 90
VR (V)
20ꢀ76
20ꢀ79
t (ns)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 6 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Document Number: 81801
Rev. 1.6, 26-Oct-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
3
VCUT0714A-HD1
Bidirectional Asymmetrical (BiAs) Single
Line ESD-Protection Diode in LLP1006-2L
Vishay Semiconductors
10
180
Acc. IEC 61000-4-2
Pin 2 to 1
Pin 1 to 2
Acc. IEC 61000-4-2
contact discharge
0
- 10
- 20
- 30
- 40
- ꢀ0
- 60
- 70
- 80
160
140
120
100
80
- 8 kV
contact discharge
Pin 1 to 2
60
VC-ESD
40
20
0
- 10
0
10 20 30 40 ꢀ0 60 70 80 90
0
ꢀ
10
1ꢀ
20
2ꢀ
30
20ꢀ80
20ꢀ7ꢀ
VESD (kV)
t (ns)
Fig. 7 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L
0.3 (0.012)
0.2 (0.008)
0.4ꢀ (0.018)
0.6ꢀ (0.026)
0.ꢀꢀ (0.022)
0.3ꢀ (0.014)
Orientation identification
1.0ꢀ (0.041)
0.9ꢀ (0.037)
Solder
resist mask
Foot print recommendation:
1 (0.039)
Solder pad
0.0ꢀ (0.002)
0.ꢀ (0.020)
Created - Date: 13. July. 2007
Rev. 4 - Date: 12. Sept. 2008
Document no.:S8-V-3906.04-00ꢀ (4)
20812
0.2ꢀ (0.010)
Soldermask opening 0.03
measured middle of the package
www.vishay.com
4
For technical questions, contact: ESDprotection@vishay.com
Document Number: 81801
Rev. 1.6, 26-Oct-10
Legal Disclaimer Notice
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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