VEMT4700-GS18 [VISHAY]

Silicon NPN Phototransistor, RoHS Compliant; 硅NPN光电晶体管,符合RoHS
VEMT4700-GS18
型号: VEMT4700-GS18
厂家: VISHAY    VISHAY
描述:

Silicon NPN Phototransistor, RoHS Compliant
硅NPN光电晶体管,符合RoHS

晶体 光电 晶体管 光电晶体管
文件: 总7页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VEMT4700  
Vishay Semiconductors  
Silicon NPN Phototransistor, RoHS Compliant  
FEATURES  
• Package type: surface mount  
• Package form: PLCC-3  
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75  
• High photo sensitivity  
• High radiant sensitivity  
• Suitable for visible and near infrared radiation  
• Fast response times  
94 8554  
• Angle of half sensitivity: ϕ = 60°  
• Base terminal connected  
• Package notch indicates collector  
• Package matched with IR emitter series VSML3710  
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020  
• Lead (Pb)-free reflow soldering  
DESCRIPTION  
VEMT4700 is a high speed silicon NPN epitaxial planar  
phototransistor in a miniature PLCC-3 package for surface  
mounting on printed boards. The device is sensitive to visible  
and near infrared radiation.  
• Lead (Pb)-free component in accordance with  
RoHS 2002/95/EC and WEEE 2002/96/EC  
APPLICATIONS  
• Photo interrupters  
• Miniature switches  
• Counters  
• Encoders  
• Position sensors  
• Light sensors  
PRODUCT SUMMARY  
COMPONENT  
Ica (mA)  
ϕ (deg)  
λ0.1 (nm)  
VEMT4700  
0.5  
60  
450 to 1080  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
VEMT4700-GS08  
VEMT4700-GS18  
PACKAGING  
Tape and reel  
Tape and reel  
REMARKS  
PACKAGE FORM  
PLCC-3  
MOQ: 7500 pcs, 1500 pcs/reel  
MOQ: 8000 pcs, 8000 pcs/reel  
PLCC-3  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
70  
UNIT  
Collector emitter voltage  
Emitter collector voltage  
Collector current  
VCEO  
VECO  
IC  
V
V
5
50  
mA  
mA  
mW  
Collector peak current  
Power dissipation  
tp/T 0.1, tp 10 µs  
ICM  
100  
100  
PV  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
531  
VEMT4700  
Silicon NPN Phototransistor, RoHS Compliant  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
Tj  
VALUE  
100  
UNIT  
°C  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
- 40 to + 100  
- 40 to + 100  
260  
°C  
°C  
Acc. reflow solder profile fig. 10  
Tsd  
°C  
Thermal resistance junction/ambient  
Soldered on PCB with pad dimensions: 4 mm x 4 mm  
RthJA  
400  
K/W  
Note  
Tamb = 25 °C, unless otherwise specified  
125  
R thJA = 400 K/W  
100  
75  
50  
25  
0
0
10 20 30 40 50 60 70 80 90 100  
Tamb - Ambient Temperature (°C)  
20376  
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature  
BASIC CHARACTERISTICS  
PARAMETER  
TEST CONDITION  
C = 1 mA  
CE = 20 V, E = 0  
CE = 5 V, f = 1 MHz, E = 0  
Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V  
SYMBOL  
V(BR)CEO  
ICEO  
CCEO  
Ica  
MIN.  
TYP.  
MAX.  
UNIT  
V
Collector emitter breakdown voltage  
Collector emitter dark current  
Collector emitter capacitance  
Collector light current  
I
70  
V
1
3
200  
nA  
V
pF  
0.25  
0.5  
mA  
deg  
nm  
nm  
Angle of half sensitivity  
ϕ
60  
850  
Wavelength of peak sensitivity  
Range of spectral bandwidth  
λp  
λ0.1  
450 to 1080  
Ee = 1 mW/cm2, λ = 950 nm,  
C = 0.1 mA  
Collector emitter saturation voltage  
VCEsat  
tr/tf  
0.15  
0.3  
V
I
V
V
S = 5 V, IC = 1 mA, λ = 950 nm,  
RL = 1 kΩ  
6
µs  
Rise time, fall time  
Cut-off frequency  
S = 5 V, IC = 1 mA, λ = 950 nm,  
RL = 100 Ω  
tr/tf  
fc  
2
µs  
VS = 5 V, IC = 2 mA, RL = 100 Ω  
180  
kHz  
Note  
Tamb = 25 °C, unless otherwise specified  
www.vishay.com  
532  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
VEMT4700  
Silicon NPN Phototransistor, RoHS Compliant  
Vishay Semiconductors  
BASIC CHARACTERISTICS  
Tamb = 25 °C, unless otherwise specified  
104  
103  
10  
= 950 nm  
λ
VCE = 20 V  
102  
1
Ee = 1 mW/cm²  
0.5 mW/cm²  
0.2 mW/cm²  
101  
10  
0.1  
20  
40  
60  
80  
100  
100  
0.1  
1
10  
94 8304  
Tamb - Ambient Temperature (°C)  
VCE - Collector Emitter Voltage (V)  
94 8317  
Fig. 2 - Collector Dark Current vs. Ambient Temperature  
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage  
2.0  
10  
1.8  
f = 1 MHz  
8
VCE = 5 V  
E = 1 mW/cm2  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
λe  
= 950 nm  
6
4
2
0
0
20  
40  
60  
80  
100  
0.1  
1
10  
100  
94 8239  
Tamb - Ambient Temperature (°C)  
94 8294  
VCE - Collector Emitter Voltage (V)  
Fig. 3 - Relative Collector Current vs. Ambient Temperature  
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage  
10  
1
8
VCE = 5 V  
RL = 100 Ω  
6
4
= 950 nm  
λ
0.1  
VCE = 5 V  
toff  
ton  
0.01  
= 950 nm  
λ
2
0
0.001  
0
2
4
6
8
10  
12  
14  
10  
0.01  
0.1  
1
Ee - Irradiance (mW/cm²)  
94 8316  
94 8293  
IC - Collector Current (mA)  
Fig. 4 - Collector Light Current vs. Irradiance  
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
533  
VEMT4700  
Silicon NPN Phototransistor, RoHS Compliant  
Vishay Semiconductors  
0°  
10°  
20°  
30°  
40°  
1.0  
0.8  
1.0  
0.9  
0.6  
0.4  
0.2  
0
50°  
60°  
0.8  
70°  
0.7  
80°  
0.6 0.4 0.2  
0
400  
600  
800  
1000  
94 8318  
94 8348  
λ - Wavelength (nm)  
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength  
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement  
PACKAGE DIMENSIONS in millimeters  
Mounting Pad Layout  
area covered with  
solder resist  
1.2  
4
1.6 (1.9)  
Dimensions: IR and vaporphase  
(wave soldering)  
21439  
www.vishay.com  
534  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
VEMT4700  
Silicon NPN Phototransistor, RoHS Compliant  
Vishay Semiconductors  
SOLDER PROFILE  
3.5  
3.1  
2.2  
2.0  
300  
max. 260 °C  
245 °C  
255 °C  
250  
240 °C  
5.75  
5.25  
217 °C  
200  
4.0  
3.6  
max. 30 s  
8.3  
7.7  
3.6  
3.4  
150  
max. 100 s  
max. 120 s  
1.85  
1.65  
100  
50  
0
0.25  
1.6  
1.4  
4.1  
3.9  
4.1  
3.9  
max. ramp down 6 °C/s  
max. ramp up 3 °C/s  
2.05  
1.95  
94 8668  
0
50  
100  
150  
200  
250  
300  
19841  
Time (s)  
Fig. 12 - Tape Dimensions in mm for PLCC-3  
Fig. 10 - Lead (Pb)-free Reflow Solder Profile  
acc. J-STD-020D  
MISSING DEVICES  
A maximum of 0.5 % of the total number of components per  
reel may be missing, exclusively missing components at the  
beginning and at the end of the reel. A maximum of three  
consecutive components may be missing, provided this gap  
is followed by six consecutive components.  
DRYPACK  
Devices are packed in moisture barrier bags (MBB) to  
prevent the products from moisture absorption during  
transportation and storage. Each bag contains a desiccant.  
FLOOR LIFE  
De-reeling direction  
94 8158  
Floor life (time between soldering and removing from MBB)  
must not exceed the time indicated on MBB label:  
Floor life: 4 weeks  
Conditions: Tamb < 30 °C, RH < 60 %  
Moisture sensitivity level 2a, acc. to J-STD-020.  
> 160 mm  
DRYING  
40 empty  
compartments  
min. 75 empty  
compartments  
In case of moisture absorption devices should be baked  
before soldering. Conditions see J-STD-020 or label.  
Devices taped on reel dry using recommended conditions  
192 h at 40 °C (+ 5 °C), RH < 5 %.  
Tape leader  
Carrier leader  
Carrier trailer  
Fig. 13 - Beginning and End of Reel  
The tape leader is at least 160 mm and is followed by a  
carrier tape leader with at least 40 empty compartments. The  
tape leader may include the carrier tape as long as the cover  
tape is not connected to the carrier tape. The least  
component is followed by a carrier tape trailer with a least 75  
empty compartments and sealed with cover tape.  
TAPE AND REEL  
PLCC-3 components are packed in antistatic blister tape  
(DIN IEC (CO) 564) for automatic component insertion.  
Cavities of blister tape are covered with adhesive tape.  
Adhesive tape  
Blister tape  
Component cavity  
94 8670  
Fig. 11 - Blister Tape  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
535  
VEMT4700  
Silicon NPN Phototransistor, RoHS Compliant  
Vishay Semiconductors  
COVER TAPE REMOVAL FORCE  
The removal force lies between 0.1 N and 1.0 N at a removal  
10.0  
9.0  
120°  
speed of 5 mm/s. In order to prevent components from  
popping out of the blisters, the cover tape must be pulled off  
at an angle of 180° with regard to the feed direction.  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
63.5  
60.5  
Identification  
Label:  
Vishay  
type  
group  
tape code  
production  
code  
14.4 max.  
180  
178  
quantity  
94 8665  
Fig. 14 - Dimensions of Reel-GS08  
10.4  
8.4  
120°  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
62.5  
60.0  
Identification  
Label:  
Vishay  
type  
group  
tape code  
production  
code  
14.4 max.  
321  
329  
quantity  
18857  
Fig. 15 - Dimensions of Reel-GS18  
www.vishay.com  
536  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 81501  
Rev. 1.3, 04-Sep-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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