VESD01A2-03G-G3 [VISHAY]
Dual-Line ESD-Protection Diode Array in SOT-323;型号: | VESD01A2-03G-G3 |
厂家: | VISHAY |
描述: | Dual-Line ESD-Protection Diode Array in SOT-323 |
文件: | 总10页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
Dual-Line ESD-Protection Diode Array in SOT-323
FEATURES
• Compact SOT-323 package
1
2
• 2-line unidirectional ESD-protection
• AEC-Q101 qualified available
• Working range 1 V to 33 V
3
• ESD immunity acc. IEC 61000-4-2
20456
15 kV to 30 kV contact discharge
15 kV to 30 kV air discharge
22743
SOT-323
• Lead plating: Sn (e3)
MARKING (example only)
- soldering can be checked by standard vision
inspection
- AOI = Automated Optical Inspection
WW
VY
ABC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
22744
ABC = type code (see table below)
WW = date code working week
VY = date code year
DESIGN SUPPORT TOOLS AVAILABLE
3
D
3D Models
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
RoHS COMPLIANT +
LEAD (Pb)-FREE
TERMINATIONS
PART NUMBER
(EXAMPLE)
AEC-Q101
QUALIFIED
8K PER 7" REEL
(8 mm TAPE)
ORDERING CODE
(EXAMPLE)
TIN PLATED
GREEN
MOQ = 8K/BOX
VESD05A2-03G
VESD05A2-03G
-
G
G
3
3
-08
-08
VESD05A2-03G-G3-08
VESD05A2-03GHG3-08
H
PACKAGE DATA
PACKAGE TYPE
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
DEVICE NAME
WEIGHT
SOLDERING CONDITIONS
NAME
CODE
D01
D03
D05
D08
D12
D16
D26
D33
SENSITIVITY LEVEL
VESD01A2-03G-G3
VESD03A2-03G-G3
VESD05A2-03G-G3
VESD08A2-03G-G3
VESD12A2-03G-G3
VESD16A2-03G-G3
VESD26A2-03G-G3
VESD33A2-03G-G3
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
MSL level 1
(according J-STD-020)
5.2 mg
UL 94 V-0
Peak temperature max. 260 °C
Rev. 1.1, 13-Feb-2020
Document Number: 86150
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS VESD01A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
14.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD03A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
11.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD05A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
8.7
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD08A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
6.60
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
Rev. 1.1, 13-Feb-2020
Document Number: 86150
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS VESD12A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
4.4
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD16A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
3.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
30
kV
kV
°C
°C
ESD immunity
VESD
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD26A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
2.1
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
20
kV
kV
°C
°C
ESD immunity
VESD
20
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
ABSOLUTE MAXIMUM RATINGS VESD33A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Acc. IEC 61000-4-5, 8/20 μs/single shot
Acc. IEC 61000-4-5, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
IPPM
VALUE
1.6
UNIT
A
Peak pulse current
Peak pulse power
PPP
100
W
15
kV
kV
°C
°C
ESD immunity
VESD
15
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
Tstg
Rev. 1.1, 13-Feb-2020
Document Number: 86150
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD01A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
1
1
1.2
20
-
V
Reverse current
at VR = 1 V
IR
-
100
2.8
6.9
1.2
3.92
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 20 mA
VBR
VC
2.5
-
2.65
6.2
1.1
3
at IPP = IPPM = 14.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 14.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
0.13
192
Ω
Capacitance
CD
153
230
pF
ELECTRICAL CHARACTERISTICS VESD03A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
3
3
-
-
V
Reverse current
at VR = 3 V
IR
-
8
20
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
4.4
-
4.65
7.8
1.1
2.6
0.19
112
4.9
8.70
1.2
3.32
-
at IPP = IPPM = 11.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 11.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
89
135
pF
ELECTRICAL CHARACTERISTICS VESD05A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
Reverse stand off voltage
Reverse voltage
-
5
-
5
-
-
V
Reverse current
at VR = 5 V
IR
-
0.01
7.26
10.3
1.1
2.2
0.2
67
0.1
7.65
11.5
1.2
2.74
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
6.85
-
at IPP = IPPM = 8.7 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 8.7 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
53
81
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD08A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
8
8
-
-
V
Reverse current
at VR = 8 V
IR
-
0.01
10
0.1
10.5
15.3
1.2
2.32
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
9.5
-
at IPP = IPPM = 6.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
13.7
1.1
1.9
0.23
47
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 6.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
37
57
pF
ELECTRICAL CHARACTERISTICS VESD12A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
12
12
-
-
-
V
Reverse current
at VR = 12 V
IR
0.01
14.7
20.5
1.1
1.6
0.4
33
0.1
15.5
22.7
1.2
1.88
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
13.9
-
at IPP = IPPM = 4.4 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
V
Forward clamping voltage
at IPP = IPPM = 4.4 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
26
40
pF
ELECTRICAL CHARACTERISTICS VESD16A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
16
16
-
-
-
V
Reverse current
at VR = 16 V
IR
0.01
17.9
25.3
1.1
1.5
0.53
27
0.1
18.8
28
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
17
-
at IPP = IPPM = 3.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.2
1.72
-
V
Forward clamping voltage
at IPP = IPPM = 3.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
21
33
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD26A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
26
26
-
-
-
V
Reverse current
at VR = 26 V
IR
< 0.01
29.1
43
0.1
30.6
48
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
27.6
-
at IPP = IPPM = 2.1 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.3
1.9
17.5
1.2
1.42
-
V
Forward clamping voltage
at IPP = IPPM = 2.1 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
14
21
pF
ELECTRICAL CHARACTERISTICS VESD33A2-03G
(Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
-
-
Reverse stand off voltage
Reverse voltage
-
33
33
-
-
-
V
Reverse current
at VR = 33 V
IR
< 0.01
37.4
56
0.1
39.3
62.5
1.2
1.32
-
μA
V
Reverse breakdown voltage
Reverse clamping voltage
at IR = 1 mA
VBR
VC
35.5
-
at IPP = IPPM = 1.6 A, tp = 8/20 μs
at IPP = 1 A, tp = 300 μs
V
VF
0.9
-
1.1
1.22
3.6
15
V
Forward clamping voltage
at IPP = IPPM = 1.6 A, tp = 8/20 μs
tp = 100 ns (TLP; reverse direction)
at VR = 0 V; f = 1 MHz
VF
V
Dynamic resistance
rdyn
-
Ω
Capacitance
CD
12
18
pF
Rev. 1.1, 13-Feb-2020
Document Number: 86150
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
Axis Title
120
100
80
10000
1000
100
Rise time = 0.7 ns to 1 ns
VESD01...
100
VESD03...
VESD05...
VESD08...
60
53
VESD12...
10
VESD16...
40
27
VESD26...
VESD33...
20
f = 1 MHz
1
0.01
0
10
0.1
1
10
100
-10
0
10 20 30 40 50 60 70 80 90 100
VR (V)
2nd line
20557
t (ns)
2nd line
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2
Fig. 4 - Typical Capacitance vs. Reverse Voltage
(330 Ω / 150 pF)
Axis Title
10000
40
VESD33...
VESD26...
100
80
60
40
20
0
8 µs to 100 %
35
30
25
20
15
10
5
1000
100
10
20 µs to 50 %
VESD16...
VESD12...
VESD08...
VESD05...
0
0.001 0.01 0.1
1
10
IR (µA)
2nd line
100 1000 10 000
0
10
20
30
40
20548
t (µs)
2nd line
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Fig. 5 - Typical Reverse Voltage vs. Reverse Current
65
60
VESD33...
VESD33...
100
VESD26...
55
50
45
40
35
30
25
20
15
10
5
Measured according IEC 61000-4-5
(8/20 µs - wave form)
VESD16...
VESD12...
VESD08...
VESD05...
VESD03...
VESD26...
VESD01...
10
VESD16...
VESD12...
VESD08...
VESD05...
Transmission line pulse (TLP):
VESD03...
t
p = 100 ns
VESD01...
1
0
1
10
ITLP (A)
2nd line
100
0
5
10
15
20
IPP (A)
2nd line
Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
Rev. 1.1, 13-Feb-2020
Document Number: 86150
7
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VESD03...
to
VESD33...
VESD01...
1.0
Measured according IEC 61000-4-5
(8/20 µs - wave form)
0.5
0
1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01
0
10
20
30
IF (A)
2nd line
IF (A)
2nd line
Fig. 7 - Typical Forward Voltage vs. Forward Current
Fig. 8 - Typical Forward Voltage vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): SOT-323
2.2 (0.087)
2.0 (0.079)
0.46 (0.018)
0.26 (0.010)
0.525 (0.021) ref.
0.4 (0.016)
0.2 (0.008)
2.45 (0.096)
2.15 (0.085)
foot print recommendation:
0.6 (0.024)
0.65 (0.026) typ
1.4 (0.055)
1.2 (0.047)
Document no.: 6.541-5040.02-4
Rev. 1 - Date: 06. April 2010
21113
0.65 (0.026)
1.3 (0.051)
Rev. 1.1, 13-Feb-2020
Document Number: 86150
8
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD01A2-03G to VESD33A2-03G
www.vishay.com
Vishay Semiconductors
CARRIER TAPE SOT-323
A-A Section
0.254 0.013
2
0.05
4
0.1
A
+0.1
0.0
Ø 1.55
+0.25
0.00
Ø 1
B
B
A
1.19 0.1
4
0.1
B-B Section
2.4 0.1
Document no.: S8-V-3717.08-002 (4)
Created - Date: 09. Feb. 2010
22762
ORIENTATION IN CARRIER TAPE SOT-323
Unreeling direction
Document no.: S8-V-3717.08-002 (4)
Created - Date: 09. Feb. 2010
22761
Top view
Rev. 1.1, 13-Feb-2020
Document Number: 86150
9
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2021
Document Number: 91000
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