VESDXX-02V [VISHAY]
Single ESD-Protection Diode in SOD-523;
| 型号： | VESDXX-02V |
| 厂家： | 
VISHAY |
| 描述： | Single ESD-Protection Diode in SOD-523 |
| 文件： | 总5页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VESDxx-02V
Vishay Semiconductors
www.vishay.com
Single ESD-Protection Diode in SOD-523
FEATURES
• Single-line ESD-protection
• Low leakage current
1
2
• ESD-immunity acc. IEC 61000-4-2
8 kV contact discharge
20278
1ꢀ kV air discharge
19344
• e3 - Sn
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MARKING (example only)
XY
20279
Bar = cathode marking
X = date code
Y = type code (see table below)
ORDERING INFORMATION
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
DEVICE NAME
ORDERING CODE
MINIMUM ORDER QUANTITY
VESD01-02V
VESD03-02V
VESD05-02V
VESD08-02V
VESD12-02V
VESD01-02V-G-08
VESD03-02V-G-08
VESD0ꢀ-02V-G-08
VESD08-02V-G-08
VESD12-02V-G-08
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
PACKAGE DATA
PACKAGE
TYPE
MOLDING COMPOUND
MOISTURE
SOLDERING
CONDITIONS
DEVICE NAME
WEIGHT
1.4 mg
1.4 mg
1.4 mg
1.4 mg
1.4 mg
NAME
CODE
FLAMMABILITY RATING SENSITIVITY LEVEL
A
MSL level 1
UL 94 V-0
VESD01-02V
VESD03-02V
VESD05-02V
VESD08-02V
VESD12-02V
SOD-ꢀ23
SOD-ꢀ23
SOD-ꢀ23
SOD-ꢀ23
SOD-ꢀ23
.
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
(according J-STD-020)
B
MSL level 1
UL 94 V-0
.
(according J-STD-020)
C
MSL level 1
UL 94 V-0
.
(according J-STD-020)
D
MSL level 1
UL 94 V-0
.
(according J-STD-020)
E
MSL level 1
UL 94 V-0
.
(according J-STD-020)
Rev. 1.1, 20-Jun-12
Document Number: 83367
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESDxx-02V
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS VESD01-02V
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
A
Peak pulse current
Peak pulse power
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
7
PPP
63
W
8
kV
kV
°C
°C
ESD immunity
VESD
1ꢀ
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
Tstg
ABSOLUTE MAXIMUM RATINGS VESD03-02V
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
A
Peak pulse current
Peak pulse power
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
9
PPP
108
W
8
kV
kV
°C
°C
ESD immunity
VESD
1ꢀ
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
Tstg
ABSOLUTE MAXIMUM RATINGS VESD0ꢀ-02V
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
A
Peak pulse current
Peak pulse power
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
6
PPP
120
W
8
kV
kV
°C
°C
ESD immunity
VESD
1ꢀ
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
Tstg
ABSOLUTE MAXIMUM RATINGS VESD08-02V
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
A
Peak pulse current
Peak pulse power
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
4
PPP
120
W
8
kV
kV
°C
°C
ESD immunity
VESD
1ꢀ
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
Tstg
ABSOLUTE MAXIMUM RATINGS VESD12-02V
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
A
Peak pulse current
Peak pulse power
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Acc. IEC 61000-4-ꢀ, 8/20 μs/single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
2
PPP
2ꢀ
W
8
kV
kV
°C
°C
ESD immunity
VESD
1ꢀ
Operating temperature
Storage temperature
TJ
- 40 to + 12ꢀ
- ꢀꢀ to + 1ꢀ0
Tstg
Rev. 1.1, 20-Jun-12
Document Number: 83367
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESDxx-02V
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS VESD01-02V
(Tamb = 2ꢀ °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
MAX.
UNIT
lines
V
Protection paths
Reverse stand-off voltage
Reverse voltage
-
-
1
-
-
-
1
1
-
V
Reverse current
at VR = 1 V
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
IR
VBR
VC
CD
-
1.ꢀ
-
-
-
100
μA
V
V
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
-
-
-
9
180
-
pF
ELECTRICAL CHARACTERISTICS VESD03-02V
(Tamb = 2ꢀ °C, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
-
-
3
-
4
-
TYP.
-
-
-
-
MAX.
UNIT
lines
V
V
μA
V
1
3
-
20
-
at VR = 3 V
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
IR
VBR
VC
CD
-
12
110
-
-
V
pF
-
ELECTRICAL CHARACTERISTICS VESD0ꢀ-02V
(Tamb = 2ꢀ °C, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
-
-
TYP.
-
-
MAX.
1
ꢀ
UNIT
lines
V
ꢀ
-
-
V
Reverse current
at VR = ꢀ V
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
IR
VBR
VC
CD
-
6.ꢀ
-
-
-
20
ꢀꢀ
0.1
-
-
μA
V
V
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
-
-
pF
ELECTRICAL CHARACTERISTICS VESD08-02V
(Tamb = 2ꢀ °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
MAX.
UNIT
lines
V
V
μA
V
Protection paths
Reverse stand-off voltage
Reverse voltage
-
-
8
-
9
-
-
-
-
-
-
-
1
8
-
0.1
-
-
Reverse current
at VR = 8 V
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
IR
VBR
VC
CD
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
30
3ꢀ
V
pF
-
ELECTRICAL CHARACTERISTICS VESD12-02V
(Tamb = 2ꢀ °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 0.1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
MAX.
UNIT
lines
V
V
μA
V
Protection paths
Reverse stand-off voltage
Reverse voltage
-
-
12
-
14
-
-
-
-
-
-
-
1
12
-
0.1
-
Reverse current
at VR = 12 V
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
IR
VBR
VC
CD
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
2ꢀ
30
-
-
V
pF
Rev. 1.1, 20-Jun-12
Document Number: 83367
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESDxx-02V
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (Inches): SOD-523
0.9 (0.03ꢀ)
0.7 (0.028)
1.7 (0.067)
1.ꢀ (0.0ꢀ9)
foot print recommendation:
1.4ꢀ (0.0ꢀ7)
1.3 (0.0ꢀ1)
1.1 (0.043)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
16864
0.3ꢀ (0.014)
Rev. 1.1, 20-Jun-12
Document Number: 83367
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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