VF20100C_15 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;型号: | VF20100C_15 |
厂家: | VISHAY |
描述: | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
文件: | 总4页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VF20100C
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
VF20100C
TYPICAL APPLICATIONS
PIN 1
PIN 3
PIN 2
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 10 A
100 V
VRRM
Base P/N-M3
commercial grade
- halogen-free, RoHS-compliant, and
IFSM
150 A
VF at IF = 10 A
TJ max.
Package
0.58 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
150 °C
ITO-220AB
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF20100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Voltage rating of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 17-Aug-15
Document Number: 89323
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF20100C
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.55
0.65
0.50
0.58
17
-
0.79
-
TA = 25 °C
IF = 10 A
IF = 5 A
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
IF = 10 A
0.68
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 70 V
5.3
-
-
(2)
Reverse current per diode
IR
800
25
VR = 100 V
12
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF20100C
UNIT
Typical thermal resistance per diode
RJC
5.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
1.75
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VF20100C-M3/4W
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
20
16
12
8
20
18
16
14
12
10
8
D = 0.8
D = 0.5
Resistive or Inductive Load
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
6
4
4
2
D = tp/T
tp
0
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
0
Average Forward Current (A)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 17-Aug-15
Document Number: 89323
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF20100C
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 25 °C
10
0.1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
1
0.01
10
20
30
40
50
60
70
80
90 100
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 17-Aug-15
Document Number: 89323
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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