VFT2060C-M3-4W [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
| 型号： | VFT2060C-M3-4W |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VFT2060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
2
• Halogen-free according to IEC 61249-2-21 definition
1
VFT2060C
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
60 V
Base P/N-M3
- halogen-free, RoHS compliant, and
VRRM
commercial grade
IFSM
150 A
0.52 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT2060C
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
20
10
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Voltage rate of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 89254
Revision: 18-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VFT2060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.49
0.57
0.40
0.52
-
MAX.
-
UNIT
IF = 5.0 A
TA = 25 °C
IF = 10 A
IF = 5.0 A
IF = 10 A
0.65
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
0.59
850
40
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 60 V
IR
TA = 125 °C
14
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT2060C
6.0
UNIT
per diode
per device
Typical thermal resistance
RθJC
°C/W
4.8
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
ITO-220AB
VFT2060C-M3/4W
1.76
4W
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16
12
8
10
9
D = 0.8
D = 0.5
D = 0.3
8
D = 0.2
7
6
D = 1.0
T
D = 0.1
5
4
3
2
1
0
4
D = tp/T
8
tp
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
0
2
4
6
10
12
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89254
Revision: 18-Nov-10
New Product
VFT2060C
Vishay General Semiconductor
100
10
1
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
1000
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
10
0.1
1
10
100
20
30
40
50
60
70
80
90
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Document Number: 89254
Revision: 18-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
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1
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