VFT3045BP_15 [VISHAY]
Trench MOS Barrier Schottky Rectifier;
| 型号： | VFT3045BP_15 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VFT3045BP
Vishay General Semiconductor
www.vishay.com
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5 A
FEATURES
TMBS®
ITO-220AC
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
VFT3045BP
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 1
PIN 2
MECHANICAL DATA
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(DC)
30 A
45 V
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IFSM
200 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 30 A
0.51 V
T
OP max. (AC mode)
150 °C
200 °C
ITO-220AC
Single die
TJ max. (DC forward current)
Package
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Diode variation
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT3045BP
UNIT
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
VRRM
45
30
V
A
(1)
IF(DC)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Operating junction temperature range (AC mode)
Isolation voltage from termal to heatsink t = 1 min
TOP
VAC
-40 to +150
1500
°C
V
Junction temperature in DC forward current
without reverse bias, t 1 h
(2)
TJ
200
°C
Notes
(1)
With heatsink
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
(2)
Revision: 23-Feb-12
Document Number: 89455
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT3045BP
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.42
0.49
0.58
0.30
0.40
0.51
-
-
-
IF = 15 A
IF = 30 A
IF = 5 A
TA = 25 °C
0.70
-
(1)
Instantaneous forward voltage
VF
V
IF = 15 A
IF = 30 A
TA = 125 °C
-
0.60
2000
60
TA = 25 °C
μA
(2)
Reverse current
VR = 45 V
IR
TA = 125 °C
19
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT3045BP
UNIT
Typical thermal resistance
RJC
4.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
ITO-220AC
VFT3045BP-M3/4W
1.75
4W
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
100
10
1
30
25
20
15
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
DC Forward Current at
Thermal Equilibrium
5
0
TA = 25 °C
0.5
0.1
0
25
50
75
100 125 150 175 200
0
0.1
0.2
0.3
0.4
0.6
0.7
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-12
Document Number: 89455
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT3045BP
Vishay General Semiconductor
www.vishay.com
10
100
10
Junction to Case
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
1
0.1
0.01
0.001
TA = 25 °C
40
0.1
20
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 3 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
Revision: 23-Feb-12
Document Number: 89455
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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