VFT6045CBP [VISHAY]
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection; Trench MOS势垒肖特基整流器用于光伏太阳能电池旁路保护型号: | VFT6045CBP |
厂家: | VISHAY |
描述: | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |
文件: | 总4页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
VFT6045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
2
• Halogen-free according to IEC 61249-2-21 definition
1
VFT6045CBP
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 30 A
45 V
VRRM
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
IFSM
320 A
0.47 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 30 A
TOP max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT6045CBP
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
60
30
V
per device
per diode
(1)
Maximum average forward rectified current (fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
320
Isolation voltage from termal to heatsink, t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TOP, TSTG
- 40 to + 150
°C
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
(2)
TJ
≤ 200
°C
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Document Number: 89370
Revision: 03-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VFT6045CBP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.44
0.47
0.54
0.33
0.37
0.47
-
MAX.
UNIT
IF = 10 A
-
-
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
TA = 25 °C
TA = 125 °C
0.64
-
(1)
Instantaneous forward voltage per diode
VF
V
-
0.56
3000
50
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 45 V
IR
TA = 125 °C
18
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT6045CBP
UNIT
per diode
per device
5.0
3.5
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT6045CBP-M3/4W
1.76
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
60
50
40
30
20
10
0
20
18
16
14
12
10
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 1.0
D = 0.1
8
6
4
2
0
T
D = tp/T
tp
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89370
Revision: 03-Nov-10
New Product
VFT6045CBP
Vishay General Semiconductor
100
10
1
100 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
10 000
1000
100
TA = 100 °C
TA = 125 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TA = 150 °C
Junction to Case
TA = 125 °C
TA = 100 °C
10
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.076 (1.93) REF.
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.580 (14.73)
PIN
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Document Number: 89370
Revision: 03-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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1
相关型号:
VFT6045CBP-M3/4W
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
VISHAY
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