VI20100C-M3/4W [VISHAY]

DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
VI20100C-M3/4W
型号: VI20100C-M3/4W
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

功效 二极管
文件: 总5页 (文件大小:140K)
下载:  下载PDF数据表文档文件

VI20100S

High-Voltage Trench MOS Barrier Schottky Rectifier

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10 VISHAY

VI20100S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

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10 VISHAY

VI20100S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

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15 VISHAY

VI20100S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

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10 VISHAY

VI20100SG

High-Voltage Trench MOS Barrier Schottky Rectifier

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5 VISHAY

VI20100SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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9 VISHAY

VI20100SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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4 VISHAY

VI20100SG

Vishay General Semiconductor

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13 VISHAY

VI20100SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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13 VISHAY

VI20100SG-E3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

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7 VISHAY

VI20100SHM3/4W

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

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0 VISHAY

VI-201-2

VI-201-DP

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30 VARITRONIX

VI20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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14 VISHAY

VI20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

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5 VISHAY

VI20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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12 VISHAY