VIT1060CHM3-4W [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
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MAX34334CSE前5页PDF页面详情预览
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 2.5 A
TMBS
TO-220AB
K
®
FEATURES
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
2
VT1060C
PIN 1
PIN 3
PIN 2
CASE
3
1
VIT1060C
PIN 1
PIN 3
2
3
1
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PIN 2
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A
T
J
max.
2 x 5.0 A
60 V
100 A
0.50 V
150 °C
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
VT1060C
60
10
A
5
100
10 000
- 55 to + 150
A
V/μs
°C
VIT1060C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number: 89232
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 2.5 A
Instantaneous forward voltage per diode
I
F
= 5.0 A
I
F
= 2.5 A
I
F
= 5.0 A
Reverse current per diode
V
R
= 60 V
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
TYP.
0.49
0.58
0.39
0.50
I
R (2)
-
6.6
MAX.
-
0.70
V
-
0.60
700
25
μA
mA
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
per diode
Typical thermal resistance
per device
R
θJC
SYMBOL
VT1060C
3.5
°C/W
2.5
VIT1060C
UNIT
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
TO-262AA
TO-220AB
TO-262AA
Note
(1)
AEC-Q101 qualified
PREFERRED P/N
VT1060C-M3/4W
VIT1060C-M3/4W
VT1060CHM3/4W
(1)
VIT1060CHM3/4W
(1)
UNIT WEIGHT (g)
1.87
1.45
1.87
1.45
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
4.0
Average Forward Rectified Current (A)
10
Average Power Disspation (W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.1
D = 0.5
D = 0.3
D = 0.2
D = 0.8
8
6
D = 1.0
T
4
2
Mounted on Specific Heatsink
D = t
p
/T
t
p
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
For technical questions within your region, please contact one of the following:
Document Number: 89232
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
2
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
0.1
Junction to Case
0.01
T
A
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
Instantaneous Reverse Current (mA)
10
T
A
= 125 °C
1
T
A
= 100 °C
Junction Capacitance (pF)
T
A
= 150 °C
1000
0.1
100
0.01
T
A
= 25 °C
0.001
20
30
40
50
60
70
80
90
100
10
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
Document Number: 89232
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
TO-262AA
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
30° (TYP.)
(REF.)
0.950 (24.13)
0.920 (23.37)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.510 (12.95)
0.470 (11.94)
3
0.350 (8.89)
0.330 (8.38)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
For technical questions within your region, please contact one of the following:
Document Number: 89232
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
    VIT1060CHM3-4W
    应用领域和描述
    高压

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier
    双高压Trench MOS势垒肖特基整流器

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