VIT1060C-E3/4W [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
元器件型号: VIT1060C-E3/4W
生产厂家: VISHAY TELEFUNKEN
描述和应用:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
双高压Trench MOS势垒肖特基整流器

整流二极管瞄准线高压功效
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相关参数: VIT1060C-E3/4W详细参数
生命周期Active
零件包装代码TO-262AA
包装说明R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
HTS代码8541.10.00.80
风险等级5.72
Is SamacsysN
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.6 V
JEDEC-95代码TO-262AA
JESD-30 代码R-PSIP-T3
最大非重复峰值正向电流100 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压60 V
子类别Rectifier Diodes
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
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MAX34334CSE前5页PDF页面详情预览
New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 2.5 A
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
2
VT1060C
PIN 1
PIN 3
PIN 2
CASE
3
1
VFT1060C
PIN 1
PIN 3
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
TO-263AB
K
K
TO-262AA
2
1
1
VBT1060C
PIN 1
PIN 2
K
HEATSINK
2
3
VIT1060C
PIN 1
PIN 3
PIN 2
K
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A
T
J
max.
2x5A
60 V
100 A
0.50 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT1060C
VFT1060C
VBT1060C
60
10
5
100
65
1.0
1500
- 55 to + 150
VIT1060C
UNIT
V
A
A
mJ
A
V
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at t
p
= 2 µs, 1 kHz, T
J
= 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Document Number: 89131
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 2.5 A
I
F
= 5.0 A
I
F
= 2.5 A
I
F
= 5.0 A
Reverse current per diode
(2)
V
R
= 60 V
T
A
= 25 °C
T
A
= 25 °C
V
F
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
SYMBOL
V
BR
TYP.
60 (minimum)
0.49
0.58
0.39
0.50
-
6.9
MAX.
-
-
0.70
V
-
0.60
700
25
µA
mA
UNIT
V
Instantaneous forward voltage per diode
(1)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
per diode
per device
SYMBOL
R
θJC
VT1060C
3.5
2.5
VFT1060C
6.5
5.0
VBT1060C
3.5
2.5
VIT1060C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT1060C-E3/4W
VFT1060C-E3/4W
VBT1060C-E3/4W
VBT1060C-E3/8W
VIT1060C-E3/4W
UNIT WEIGHT (g)
1.87
1.75
1.39
1.39
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
4.0
V(B,I)T1060C
10
Average Forward Rectified Current (A)
Average Power Disspation (W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.1
D = 0.5
D = 0.3
D = 0.2
D = 0.8
8
VFT1060C
6
D = 1.0
T
4
2
Mounted on Specific Heatsink
D = t
p
/T
t
p
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Dissipation Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89131
Revision: 08-Sep-09
New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
0.1
Junction to Case
VFT1060C
V(B,I)T1060C
0.01
T
A
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Transient Thermal Impedance Per Diode
100
10 000
Instantaneous Reverse Current (mA)
10
T
A
= 125 °C
1
T
A
= 100 °C
Junction Capacitance (pF)
T
A
= 150 °C
1000
0.1
100
0.01
T
A
= 25 °C
0.001
20
30
40
50
60
70
80
90
100
10
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89131
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-262AA
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
30° (TYP.)
(REF.)
0.950 (24.13)
0.920 (23.37)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.510 (12.95)
0.470 (11.94)
3
0.350 (8.89)
0.330 (8.38)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 3
PIN 2
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89131
Revision: 08-Sep-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000