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VIT1060C-E3/4W

更新时间：2025-07-03 09:30:26
品牌：VISHAY
描述：Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

免费 PCB/SMT

VIT1060C-E3/4W 概述

Dual High-Voltage Trench MOS Barrier Schottky Rectifier 双高压Trench MOS势垒肖特基整流器 整流二极管

VIT1060C-E3/4W 规格参数

生命周期：Active零件包装代码：TO-262AA
包装说明：R-PSIP-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.72
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.6 V
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
最大非重复峰值正向电流：100 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：60 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VIT1060C-E3/4W 数据手册

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New Product  
VT1060C, VFT1060C, VBT1060C & VIT1060C  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.39 V at I = 2.5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 245 °C (for TO-263AB package)  
3
3
2
2
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106 (for TO-220AB, ITO-220AB and  
TO-262AA package)  
1
1
VT1060C  
VFT1060C  
PIN 1  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
PIN 3  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TO-263AB  
TO-262AA  
K
TYPICAL APPLICATIONS  
K
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
2
3
1
2
1
MECHANICAL DATA  
VBT1060C  
VIT1060C  
Case: TO-220AB, ITO-220AB, TO-263AB and  
TO-262AA  
PIN 1  
PIN 2  
K
PIN 1  
PIN 2  
K
HEATSINK  
PIN 3  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5 A  
VRRM  
60 V  
100 A  
0.50 V  
150 °C  
IFSM  
VF at IF = 5.0 A  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL VT1060C  
VFT1060C VBT1060C VIT1060C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
60  
V
Maximum average forward rectified current  
(fig. 1)  
per device  
per diode  
10  
5
IF(AV)  
IFSM  
EAS  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
100  
65  
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH per diode  
mJ  
A
Peak repetitive reverse current  
at tp = 2 µs, 1 kHz, TJ = 38 °C 2 °C per diode  
IRRM  
1.0  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 89131  
Revision: 08-Sep-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
VT1060C, VFT1060C, VBT1060C & VIT1060C  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
Breakdown voltage  
IR = 1.0 mA TA = 25 °C  
VBR  
60 (minimum)  
-
V
IF = 2.5 A  
IF = 5.0 A  
0.49  
0.58  
-
T
A = 25 °C  
0.70  
Instantaneous forward voltage per diode (1)  
Reverse current per diode (2)  
VF  
V
IF = 2.5 A  
IF = 5.0 A  
0.39  
0.50  
-
TA = 125 °C  
0.60  
TA = 25 °C  
-
700  
25  
µA  
mA  
VR = 60 V  
IR  
TA =125°C  
6.9  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width ≤ 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VT1060C  
VFT1060C  
VBT1060C  
VIT1060C  
UNIT  
per diode  
per device  
3.5  
2.5  
6.5  
5.0  
3.5  
2.5  
3.5  
2.5  
Typical thermal resistance  
RθJC  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-262AA  
PREFERRED P/N  
VT1060C-E3/4W  
VFT1060C-E3/4W  
VBT1060C-E3/4W  
VBT1060C-E3/8W  
VIT1060C-E3/4W  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
Tube  
1.87  
1.75  
1.39  
1.39  
1.45  
4W  
4W  
4W  
8W  
4W  
50/tube  
50/tube  
50/tube  
800/reel  
50/tube  
Tube  
Tube  
Tape and reel  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
12  
4.0  
3.5  
3.0  
2.5  
D = 0.8  
V(B,I)T1060C  
D = 0.5  
D = 0.3  
D = 0.2  
10  
8
D = 1.0  
T
D = 0.1  
2.0  
VFT1060C  
6
1.5  
1.0  
0.5  
0
4
2
Mounted on Specific Heatsink  
D = tp/T  
tp  
5
0
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
6
Case Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Average Forward Current (A)  
Figure 2. Forward Power Dissipation Characteristics Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 89131  
Revision: 08-Sep-09  
New Product  
VT1060C, VFT1060C, VBT1060C & VIT1060C  
Vishay General Semiconductor  
100  
10  
10  
Junction to Case  
TA = 150 °C  
VFT1060C  
TA = 125 °C  
1
TA = 100 °C  
V(B,I)T1060C  
0.1  
TA = 25 °C  
0.01  
0.001  
1
0.01  
0.1  
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 5. Typical Transient Thermal Impedance Per Diode  
100  
10 000  
TA = 150 °C  
TA = 125 °C  
10  
1000  
100  
10  
1
TA = 100 °C  
0.1  
0.01  
TA = 25 °C  
0.001  
0.1  
1
10  
100  
20  
30  
40  
50  
60  
70  
80  
90  
100  
Reverse Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics Per Diode  
Figure 6. Typical Junction Capacitance Per Diode  
Document Number: 89131  
Revision: 08-Sep-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
New Product  
VT1060C, VFT1060C, VBT1060C & VIT1060C  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.384 (9.75)  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
7° REF.  
0.113 (2.87)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.103 (2.62)  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.135 (3.43)  
0.580 (14.73)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.191 (4.85)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.025 (0.64)  
0.104 (2.65)  
0.096 (2.45)  
0.020 (0.51)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-262AA  
0.185 (4.70)  
0.411 (10.45) MAX.  
0.250 (6.35) MIN.  
K
0.175 (4.44)  
0.055 (1.40)  
0.047 (1.19)  
30° (TYP.)  
(REF.)  
0.055 (1.40)  
0.045 (1.14)  
0.401 (10.19)  
0.350 (8.89)  
0.330 (8.38)  
0.381 (9.68)  
0.950 (24.13)  
0.510 (12.95)  
0.470 (11.94)  
PIN  
0.920 (23.37)  
1
2
3
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.560 (14.22)  
0.530 (13.46)  
PIN 1  
PIN 3  
PIN 2  
0.045 (1.14)  
HEATSINK  
0.035 (0.90)  
0.028 (0.70)  
0.022 (0.56)  
0.014 (0.35)  
0.104 (2.65)  
0.096 (2.45)  
0.205 (5.20)  
0.195 (4.95)  
TO-263AB  
0.41 (10.45)  
0.380 (9.65)  
0.190 (4.83)  
0.160 (4.06)  
Mounting Pad Layout  
0.055 (1.40)  
0.045 (1.14)  
0.42  
MIN.  
0.245 (6.22)  
MIN  
(10.66)  
K
0.33  
(8.38)  
0.055 (1.40)  
0.047 (1.19)  
MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
0.591(15.00)  
2
0.670 (17.02)  
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15  
(3.81)  
0.037 (0.940)  
0.027 (0.686)  
MIN.  
0.08  
MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
(2.032)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
(0.095) (2.41)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 89131  
Revision: 08-Sep-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1

VIT1060C-E3/4W 替代型号

型号 制造商 描述 替代类型 文档
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VIT1060C-E3/4W 相关器件

型号 制造商 描述 价格 文档
VIT1060C-M3 VISHAY Trench MOS Schottky technology 获取价格
VIT1060C-M3-4W VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier 获取价格
VIT1060C-M3/4W VISHAY DIODE 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 获取价格
VIT1060CHM3 VISHAY Trench MOS Schottky technology 获取价格
VIT1060CHM3-4W VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier 获取价格
VIT1060CHM3/4W VISHAY DIODE 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 获取价格
VIT1080C VISHAY Dual Trench MOS Barrier Schottky Rectifier 获取价格
VIT1080C-E3/4W VISHAY Dual Trench MOS Barrier Schottky Rectifier 获取价格
VIT1080C-M3-4W VISHAY Dual Trench MOS Barrier Schottky Rectifier 获取价格
VIT1080CHM3-4W VISHAY Dual Trench MOS Barrier Schottky Rectifier 获取价格

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