概述
数据手册VIT3080C 概述
Dual Trench MOS Barrier Schottky Rectifier 双Trench MOS势垒肖特基整流器
VIT3080C 数据手册
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VT3080C, VIT3080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
3
2
2
1
1
VT3080C
VIT3080C
• Halogen-free according to IEC 61249-2-21 definition
PIN 1
PIN 1
PIN 2
K
PIN 2
CASE
PIN 3
PIN 3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reserve battery protection.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 15 A
80 V
VRRM
IFSM
150 A
0.65 V
150 °C
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
VF at IF = 15 A
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080C
VIT3080C
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
30
15
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Document Number: 89241
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080C, VIT3080C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.52
0.58
0.75
0.46
0.52
0.65
30
MAX.
UNIT
IF = 5 A
-
-
IF = 7.5 A
IF = 15 A
IF = 5 A
TA = 25 °C
0.82
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 7.5 A
IF = 15 A
TA = 125 °C
-
0.70
700
35
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 80 V
IR
TA = 125 °C
20
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080C
VIT3080C
UNIT
per diode
per device
2.5
2.0
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
PREFERRED P/N
VT3080C-M3/4W
VIT3080C-M3/4W
VT3080CHM3/4W
VIT3080CHM3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.89
1.46
1.89
1.46
4W
4W
4W
4W
Tube
Tube
Tube
Tube
50/tube
TO-220AB (1)
TO-262AA (1)
50/tube
50/tube
Note
(1)
AEC-Q101 qualified
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89241
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080C, VIT3080C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
100
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
Resistive or Inductive Load
30
25
20
15
10
5
1
0.1
0.01
TA = 25 °C
0
0.001
0
25
50
75
100
125
150
175
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
14
10
D = 0.8
D = 0.5
D = 0.3
Junction to Case
12
10
8
D = 0.2
D = 0.1
D = 1.0
1
6
T
4
2
D = tp/T
tp
0
0.1
0.01
0
2
4
6
8
10 12 14 16 18
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
10
1
TA = 100 °C
TA = 25 °C
0.6
0.1
10
0.1
0
0.2
0.4
0.8
1.0
1.2
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Document Number: 89241
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080C, VIT3080C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
0.330 (8.38)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89241
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
VIT3080C 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| VIT3080C-E3/4W | VISHAY | Dual Trench MOS Barrier Schottky Rectifier | 获取价格 |
|
| VIT3080C-M3-4W | VISHAY | Dual Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT3080CHM3-4W | VISHAY | Dual Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT3080S | VISHAY | Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT3080S-E3/4W | VISHAY | Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT3080S-M3-4W | VISHAY | Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT3080SHM3-4W | VISHAY | Trench MOS Barrier Schottky Rectifier | 获取价格 |
|
| VIT3080SHM3/4W | VISHAY | DIODE 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
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| VIT30L60C | VISHAY | Dual Trench MOS Barrier Schottky Rectifier | 获取价格 |
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| VIT30L60C-E3 | VISHAY | Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A | 获取价格 |
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