VLIN1626-02G [VISHAY]
Low Capacitance, Single-Line ESD-Protection Diode in SOD-323;
| 型号： | VLIN1626-02G |
| 厂家： | 
VISHAY |
| 描述： | Low Capacitance, Single-Line ESD-Protection Diode in SOD-323 |
| 文件： | 总6页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VLIN1626-02G
Vishay Semiconductors
www.vishay.com
Low Capacitance, Single-Line ESD-Protection Diode in SOD-323
FEATURES
• For LIN-Bus applications
• Small SOD-323 package
2
1
• Working range: -16 V; +26.5 V
• Low leakage current IR < 0.05 μA
• Low load capacitance CD < 18 pF
20503
22756
SOD-323
• ESD-protection acc. IEC 61000-4-2
30 kV contact discharge
MARKING (example only)
30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
1
XYZ
• e3 - pins plated with tin (Sn)
• 1-line ESD-protection
XYZ = type code (see table below)
• AEC-Q101 qualified available
bar = pin 1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PACKAGING CODE
PART
NUMBER
(EXAMPLE)
Ro
HS-COMPLIANT + LEAD
ORDERING CODE
(EXAMPLE)
3K PER 7" REEL 10K PER 13" REEL
(8 mm TAPE) (8 mm TAPE)
15K/BOX = MOQ 10K/BOX = MOQ
AEC-Q101
QUALIFIED
TIN
(P
b)-FREE TERMINATIONS
PLATED
STANDARD
GREEN
VLIN1626-02G
VLIN1626-02G
VLIN1626-02G
VLIN1626-02G
-
H
-
E
E
E
E
-
-
-
-
3
3
3
3
-08
-08
-
-
VLIN1626-02G-E3-08
VLIN1626-02GHE3-08
VLIN1626-02G-E3-18
VLIN1626-02GHE3-18
-
-18
-18
H
-
PACKAGE DATA
PACKAGE
NAME
TYPE
CODE
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
DEVICE NAME
WEIGHT
4.30 mg
MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
VLIN1626-02G
SOD-323
6A1
UL 94 V-0
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
A
Pin 1 to pin 2; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single
Pin 2 to pin 1; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single
TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C
Air discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C
Junction temperature
6
Peak pulse current
Peak pulse power
ESD immunity
IPPM
PPP
4
200
W
30
VESD
kV
30
Operating temperature
Storage temperature
TJ
-55 to +150
-55 to +150
°C
TSTG
Rev. 1.2, 23-Feb-16
Document Number: 85902
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLIN1626-02G
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS / REMARKS
Number of lines which can be protected
Pin 1 to pin 2; max. reverse working voltage
Pin 2 to pin 1; max. reverse working voltage
Pin 1 to pin 2; at IR = 0.05 μA
SYMBOL
MIN.
TYP.
MAX.
1
UNIT
Protection paths
Nchannel
-
-
-
lines
-
16
Reverse stand-off voltage
Reverse voltage
VRWM
VR
V
V
-
-
26.5
-
16
-
Pin 2 to pin 1; at IR = 0.05 μA
26.5
-
-
Pin 1 to pin 2; at VRWM = 16 V
-
-
0.05
0.05
20.3
32
Reverse current
IR
μA
V
Pin 2 to pin 1; at VRWM = 26.5 V
Pin 1 to pin 2; at IR = 1 mA
-
-
17.1
18.7
30
22
29
32
39
15.5
Reverse breakdown voltage
VBR
Pin 2 to pin 1; at IR = 1 mA
28
-
Pin 1 to pin 2; at IPP = 1 A; tp = 8/20 μs
Pin 1 to pin 2; at IPP = 6 A; tp = 8/20 μs
Pin 2 to pin 1; at IPP = 1 A; tp = 8/20 μs
Pin 2 to pin 1; at IPP = 4 A; tp = 8/20 μs
At VR = 0 V, f = 1 MHz
25
-
33
Reverse clamping voltage
Capacitance
VC
CD
V
-
40
-
50
-
18
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
18
120
100
80
10000
1000
100
f = 1 MHz
Pin 2 -1
16
14
12
10
8
Rise time = 0.7 ns to 1 ns
60
53
6
40
4
27
20
0
2
0
10
-20
-10
0
10
20
30
-10
0
10 20 30 40 50 60 70 80 90 100
20557
t (ns)
2nd line
22767
VR (V)
Fig. 1 - ESD Discharge Current Wave Form
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
acc. IEC 61000-4-2 (330 / 150 pF)
Axis Title
Axis Title
10000
1000
100
35
30
25
20
15
10
5
10000
1000
100
Pin 2-1
100
80
60
40
20
0
8 µs to 100 %
TJ = 150 °C
100 °C
75 °C
25 °C
-40 °C
20 µs to 50 %
10
0
0.01
10
0
10
20
30
40
0.1
1
10
100
1000 10 000
20548
t (µs)
2nd line
IR (µA)
2nd line
22811
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 1.2, 23-Feb-16
Document Number: 85902
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLIN1626-02G
Vishay Semiconductors
www.vishay.com
25
20
15
10
5
Pin 1-2
TJ = 150 °C
100 °C
75 °C
25 °C
-40 °C
0
0.01
0.1
1
10
100
1000 10 000
IR (µA)
2nd line
22812
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
45
40
Pin 2-1
35
30
25
Pin 1-2
20
15
10
Measured according IEC 61000-4-5
(8/20 µs - wave form)
5
0
0
1
2
3
4
5
6
7
IPP (A)
2nd line
22813
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
60
Transmission Line Pulse
TLP: tp = 100 ns
Pin 2-1
Pin 1-2
50
40
30
20
10
0
0
10
20
30
40
50
60
22770
ITLP (A)
Fig. 7 - Typical Clamping Voltage VC-TLP vs. Pulse Current ITLP
Rev. 1.2, 23-Feb-16
Document Number: 85902
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLIN1626-02G
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches) SOD-323
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
1.60 [0.063]
Cathode bar
Foot print recommendation:
0.6 [0.024]
2.85 [0.112]
2.50 [0.098]
0.6 [0.024]
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
22771
Rev. 1.2, 23-Feb-16
Document Number: 85902
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLIN1626-02G
Vishay Semiconductors
www.vishay.com
CARRIER TAPE SOD-323
A-A Section
0.254 0.013
4
0.1
2
0.05
A
+0.1
0.0
Ø 1.5
+0.25
0.00
Ø 1
B
B
A
1.35 0.1
4
0.1
B-B Section
1.52 0.1
Document no.: S8-V-3717.07-002 (4)
Created - Date: 09. Feb. 2010
22824
ORIENTATION IN CARRIER TAPE SOD-323
Unreeling direction
Cathode
Document no.: S8-V-3717.07-003 (4)
Created - Date: 09. Feb. 2010
22772
Top view
Rev. 1.2, 23-Feb-16
Document Number: 85902
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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