VLMB3140-GS18 [VISHAY]
Standard SMD LED PLCC-2; 标准的SMD LED PLCC- 2
| 型号： | VLMB3140-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Standard SMD LED PLCC-2 |
| 文件： | 总10页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VLMB/BG/TG31..
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
e3
• EIA and ICE standard package
• Compatible with IR reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020B
• Available in 8 mm tape
• Low profile package
19225
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
/I
≤ 1.6
Vmax Vmin
• Lead (Pb)-free device
• Preconditioning: acc. to JEDEC level 2a
•
ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D,
Method 3015.7
DESCRIPTION
APPLICATIONS
This device has been designed to meet the increasing
demand for InGaN technology.
• Automotive: backlighting in dashboards and
switches
The package of the VLMB/BG/TG31.. is the PLCC-2.
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
Blue, IV > 45 mcd
TECHNOLOGY
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
InGaN on SiC
VLMB3140-GS08
VLMB3140-GS18
VLMBG3100-GS08
VLMBG3100-GS18
VLMTG3100-GS08
VLMTG3100-GS18
Blue, IV > 45 mcd
Blue green, IV > 140 mcd
Blue green, IV > 140 mcd
True green, IV > 180 mcd
True green, IV > 180 mcd
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
1
VLMB/BG/TG31..
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS VLMB3140, VLMBG3100, VLMTG3100
PARAMETER
Reverse voltage2)
TEST CONDITION
SYMBOL
VALUE
UNIT
V
VR
5
Tamb ≤ 80 °C
tp ≤ 10 µs
IF
IFSM
PV
DC Forward current
Surge forward current
Power dissipation
20
0.2
mA
A
84
mW
°C
Tj
Junction temperature
Operating temperature range
Storage temperature range
110
Tamb
Tstg
- 40 to + 100
- 40 to + 100
°C
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
RthJA
350
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) Driving LED in reverse direction is suitable for short term application
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMB3140, BLUE
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
100
470
464
60
MAX
UNIT
Luminous intensity2)
Dominant wavelength
Peak wavelength
IF = 20 mA
IV
45
mcd
nm
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IR = 10 µA
IF = 20 mA
IF = 20 mA
λd
λp
462
476
nm
Angle of half intensity
Forward voltage
ϕ
deg
V
VF
3
4.2
VR
Reverse voltage
5
V
Temperature coefficient of VF
Temperature coefficient of IV
TCV
TCI
- 4
mV/K
%/K
- 0.4
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one Packing Unit IVmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMBG3100, BLUE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN
140
496
TYP
220
505
502
60
MAX
UNIT
mcd
nm
Luminous intensity2)
Dominant wavelength
Peak wavelength
IF = 20 mA
IV
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IR = 10 µA
IF = 20 mA
IF = 20 mA
λd
λp
514
nm
Angle of half intensity
Forward voltage
ϕ
deg
V
VF
3
4.2
VR
Reverse voltage
5
V
Temperature coefficient of VF
Temperature coefficient of IV
TCV
TCI
- 4
mV/K
%/K
- 0.2
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one Packing Unit IVmax/IVmin ≤ 1.6
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2
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMTG3100, TRUE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN
180
515
TYP
300
528
522
60
MAX
UNIT
mcd
nm
Luminous intensity2)
Dominant wavelength
Peak wavelength
IF = 20 mA
IV
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IR = 10 µA
IF = 20 mA
IF = 20 mA
λd
λp
541
nm
Angle of half intensity
Forward voltage
ϕ
deg
V
VF
3
4.2
VR
Reverse voltage
5
V
Temperature coefficient of VF
Temperature coefficient of IV
TCV
TCI
- 3.5
- 0.3
mV/K
%/K
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) In one Packing Unit IVmax/IVmin ≤ 1.6
Note:
LUMINOUS INTENSITY CLASSIFICATION
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of 11 %.
GROUP
LIGHT INTENSITY (MCD)
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
STANDARD
OPTIONAL
MIN
45
MAX
56
1
2
1
2
1
2
1
2
1
2
1
2
P
Q
R
S
T
56
71
71
90
90
112
140
180
224
280
355
450
560
710
112
140
180
224
280
355
450
560
In order to ensure availability, single wavelength groups will not be
orderable.
U
CROSSING TABLE
VISHAY
OSRAM
LBT673
LVT673
LTT673
VLMB3140
VLMBG3100
VLMTG3100
COLOR CLASSIFICATION
BLUE
BLUE GREEN
TRUE GREEN
MAX.
GROUP
MIN.
DOM. WAVELENGTH (NM)
MAX.
MIN.
MAX.
MIN.
2
3
4
5
6
458
462
466
470
474
464
468
472
476
480
496
500
504
508
502
506
510
514
515
521
527
533
523
529
535
541
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
3
VLMB/BG/TG31..
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
25
20
15
10
5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
blue
0
400 420 440 460 480 500 520 540 560
λ - Wavelength (nm)
0
10 20 30 40 50 60 70 80 90 100 110
Tamb - Ambient Temperature (°C)
16806
16069
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Relative Intensity vs. Wavelength
100
90
80
70
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
blue green
2.0
2.5
3.0
3.5
4.0
4.5
5.0
420 440 460 480 500 520 540 560 580 600
19918
16070
VF - Forward Voltage (V)
λ - Wavelength (nm)
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Relative Intensity vs. Wavelength
1.2
10
1
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
true green
0.1
0.01
1
10
100
460 480 500 520 540 560 580 600 620
λ - Wavelength (nm)
16194
I
- Forward Current (mA)
F
16068
Figure 3. Specific Luminous Flux vs. Forward Current
Figure 6. Relative Intensity vs. Wavelength
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4
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
476
474
472
470
468
538
536
534
532
530
528
526
524
blue
true green
0
10
20
30
40
50
0
10
20
I - Forward Current (mA)
F
30
40
50
IF - Forward Current (mA)
16814
16812
Figure 7. Dominant Wavelength vs. Forward Current
Figure 9. Dominant Wavelength vs. Forward Current
0°
10°
20°
30°
40°
515
blue green
513
511
509
507
505
503
501
1.0
0.9
50°
60°
0.8
70°
0.7
80°
0
10
20
30
40
50
0.6
0.6 0.4 0.2
0
0.2 0.4
95 10319
16813
I
- Forward Current (mA)
F
Figure 10. Relative Luminous Intensity
Figure 8. Dominant Wavelength vs. Forward Current
PACKAGE DIMENSIONS in millimeters
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
?
2.4
+ 0.15
3
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
5
VLMB/BG/TG31..
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL
SMD LED (VLM3 - SERIES)
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
10.0
9.0
120°
4.5
3.5
13.00
12.75
2.5
1.5
Adhesive Tape
63.5
60.5
Identification
Label:
Vishay
Blister Tape
Type
Group
Tape Code
Production
Code
14.4 max.
180
178
Quantity
94 8665
Figure 12. Reel Dimensions - GS08
94 8670
Component Cavity
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
TAPING OF VLM.3..
3.5
3.1
2.2
2.0
10.4
8.4
120°
4.5
3.5
5.75
5.25
4.0
3.6
13.00
12.75
2.5
1.5
8.3
7.7
3.6
3.4
62.5
60.0
Identification
Label:
Vishay
Type
Group
1.85
1.65
0.25
1.6
1.4
4.1
3.9
4.1
3.9
Tape Code
Production
Code
2.05
1.95
14.4 max.
321
329
94 8668
Quantity
18857
Figure 13. Reel Dimensions - GS18
Figure 11. Tape Dimensions in mm for PLCC-2
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6
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
SOLDERING PROFILE
BARCODE PRODUCT LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
250
200
150
100
50
106
max. 260 °C
245 °C
255 °C
240 °C
217 °C
A
H
VISHAY
max. 30 s
max. 100 s
37
max. 120 s
19919
B
C
D
E
F
G
max. ramp down 6 °C/s
max. ramp up 3 °C/s
0
0
50
100
150
200
250
300
A) Type of component
Time (s)
max. 2 cycles allowed
19885
B) Manufacturing plant
C) SEL - selection code (bin):
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020B)
e.g.: R2 = code for luminous intensity group
= code for color group
3
D) Date code year/week
E) Day code (e. g. 3: Wednesday)
F) Batch no.
948626-1
Lead Temperature
TTW Soldering (acc. to CECC00802)
G) Total quantity
300
250
5 s
H) Company code
second
235 °C...260 °C
full line: typical
dotted line: process limits
wave
DRY PACKING
first wave
200
150
100
ca. 2 K/s
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
ca. 200 K/s
100 °C...130 °C
ca. 5 K/s
2 K/s
forced cooling
50
0
Aluminum bag
0
100
Time (s)
250
50
150
200
Label
Figure 15. Double Wave Soldering of Opto Devices (all Packages)
Reel
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
7
VLMB/BG/TG31..
Vishay Semiconductors
RECOMMENDED METHOD OF STORAGE
ESD PRECAUTION
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/
nitrogen) or
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel
or tubes.
An EIA JEDEC Standard JESD22-A112 level 2a label
is included on all dry bags.
L
E V E L
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
3. Devices require baking before mounting if:
a)
b)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
or
96 hours at 60 5oCand <5%RH
24 hours at 100 5°C
For all device containers
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label
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8
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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