VLMY33R2U2-GS08 [VISHAY]

Power SMD LED PLCC-2; 功率SMD LED PLCC- 2
VLMY33R2U2-GS08
型号: VLMY33R2U2-GS08
厂家: VISHAY    VISHAY
描述:

Power SMD LED PLCC-2
功率SMD LED PLCC- 2

可见光LED 光电
文件: 总13页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VLM.33..  
Vishay Semiconductors  
Power SMD LED PLCC-2  
FEATURES  
• Utilizing (AS) AlInGaP technology  
• Available in 8 mm tape  
• Luminous intensity and color categorized  
per packing unit  
e3  
• Luminous intensity ratio per packing unit  
I
/I  
1.6  
Vmax Vmin  
• Thermal resistance R = 400 K/W  
19225  
• ESD-withstand voltage:  
up to 2 kV according to JESD22-A114-B  
• Lead (Pb)-free device  
• Preconditioning: acc. to JEDEC Level 2a  
DESCRIPTION  
• Compatible with Reflow, vapor phase and wave  
solder processes according to CECC 00802 and  
J-STD-020C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
The VLM.33.. series is an advanced modification of the  
Vishay VLM.33.. series. It is designed to incorporate  
larger chips, therefore, capable of withstanding a  
50 mA drive current.  
The package of the VLM.33.. is the PLCC-2.  
• Automotive qualified AEC-Q101  
It consists of a lead frame which is embedded in a  
white thermoplast. The reflector inside this package is  
filled up with clear epoxy.  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
APPLICATIONS  
• Traffic signals and signs  
• Interior and exterior lighting  
• Dashboard illumination  
• Product series: SMD Power  
• Package: PLCC-2  
• Angle of half intensity: 60°  
• Indicator and backlighting purposes for audio,  
video, LCDs switches, symbols, illuminated  
advertising etc  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
Amber, IV = (280 to 710) mcd  
TECHNOLOGY  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
VLMR33T1U2-GS08  
VLMR33T1U2-GS18  
VLMR33R2U2-GS08  
VLMR33R2U2-GS18  
VLMS33S1T2-GS08  
VLMS33S1T2-GS18  
VLMS33S1U1-GS08  
VLMS33S1U1-GS18  
VLMO33S1T2-GS08  
VLMO33S1T2-GS18  
VLMO33T1U2-GS08  
VLMO33T1U2-GS18  
VLMO33R2U2-GS08  
Amber, IV = (280 to 710) mcd  
Amber, IV = (140 to 710) mcd  
Amber, IV = (140 to 710) mcd  
Super red, IV = (180 to 450) mcd  
Super red, IV = (180 to 450) mcd  
Super red, IV = (180 to 560) mcd  
Super red, IV = (180 to 560) mcd  
Soft orange, IV = (180 to 450) mcd  
Soft orange, IV = (180 to 450) mcd  
Soft orange, IV = (280 to 710) mcd  
Soft orange, IV = (280 to 710) mcd  
Soft orange, IV = (140 to 710) mcd  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
1
VLM.33..  
Vishay Semiconductors  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
TECHNOLOGY  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
Soft orange, IV = (140 to 710) mcd  
VLMO33R2U2-GS18  
VLMY33T1U2-GS08  
VLMY33T1U2-GS18  
VLMY33R2U2-GS08  
VLMY33R2U2-GS18  
Yellow, IV = (280 to 710) mcd  
Yellow, IV = (280 to 710) mcd  
Yellow, IV = (140 to 710) mcd  
Yellow, IV = (140 to 710) mcd  
1)  
ABSOLUTE MAXIMUM RATINGS VLM.33..  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
Reverse voltage2)  
VR  
5
50  
Tamb 73 °C (400 K/W)  
IF  
PV  
DC Forward current  
Power dissipation  
mA  
mW  
°C  
130  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
125  
Tamb  
Tstg  
- 40 to + 100  
- 40 to + 100  
°C  
°C  
Thermal resistance junction/  
ambient  
mounted on PC board  
(pad size > 16 mm2)  
RthJA  
400  
K/W  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) Driving the LED in reverse direction is suitable for a short term application  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMR33.., AMBER  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
280  
140  
TYP.  
MAX  
UNIT  
mcd  
mcd  
IV  
VLMR33T1U2  
VLMR33R2U2  
710  
710  
IF = 30 mA  
Luminous intensity  
IV  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 30 mA  
IF = 30 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
611  
617  
624  
622  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 30 mA  
Δλ  
18  
nm  
IF = 30 mA  
IF = 30 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
VF  
IR  
60  
2.0  
deg  
V
1.7  
2.5  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
www.vishay.com  
2
Document Number 81336  
Rev. 1.0, 04-May-07  
VLM.33..  
Vishay Semiconductors  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMS33.., SUPER RED  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
180  
180  
TYP.  
MAX  
450  
UNIT  
mcd  
mcd  
IV  
VLMS33S1T2  
VLMS33S1U1  
IF = 30 mA  
Luminous intensity  
IV  
560  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 30 mA  
IF = 30 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
626  
630  
641  
638  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 30 mA  
Δλ  
17  
nm  
IF = 30 mA  
IF = 30 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
VF  
IR  
60  
2.0  
deg  
V
1.7  
2.5  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMO33.., SOFT ORANGE  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
180  
280  
140  
TYP.  
MAX  
450  
710  
710  
UNIT  
mcd  
mcd  
mcd  
IV  
VLMO33S1T2  
VLMO33T1U2  
VLMO33R2U2  
IF = 30 mA  
IV  
IV  
Luminous intensity  
Luminous flux/Luminous  
intensity  
φV/IV  
3
mlm/mcd  
IF = 30 mA  
IF = 30 mA  
λd  
λp  
Dominant wavelength  
Peak wavelength  
600  
605  
611  
611  
nm  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 30 mA  
Δλ  
17  
nm  
IF = 30 mA  
IF = 30 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
VF  
IR  
60  
2.0  
deg  
V
1.7  
2.5  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS VLMY33.., YELLOW  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN  
280  
140  
TYP.  
MAX  
710  
UNIT  
mcd  
IV  
VLMY33T1U2  
VLMY33R2U2  
IF = 30 mA  
Luminous intensity  
IV  
φV/IV  
λd  
710  
mcd  
Luminous flux/Luminous intensity  
Dominant wavelength  
3
mlm/mcd  
nm  
IF = 30 mA  
IF = 30 mA  
583  
1.7  
588  
590  
594  
λp  
Peak wavelength  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 30 mA  
Δλ  
18  
nm  
IF = 30 mA  
IF = 30 mA  
VR = 5 V  
Angle of half intensity  
Forward voltage  
ϕ
VF  
IR  
60  
2.0  
deg  
V
2.5  
10  
Reverse current  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
3
VLM.33..  
Vishay Semiconductors  
COLOR CLASSIFICATION  
DOMINANT WAVELENGTH (NM)  
SOFT ORANGE  
GROUP  
AMBER  
YELLOW  
MIN  
611  
614  
MAX  
618  
MIN  
598  
600  
602  
604  
606  
608  
MAX  
601  
603  
605  
607  
609  
611  
MIN  
581  
583  
585  
587  
589  
591  
MAX  
584  
586  
588  
590  
592  
594  
1
2
3
4
5
6
622  
Note:  
Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nm.  
LUMINOUS INTENSITY CLASSIFICATION  
CROSSING TABLE  
VISHAY  
GROUP  
LUMINOUS INTENSITY (MCD)  
OSRAM  
STANDARD  
OPTIONAL  
MIN  
45  
MAX  
VLMS33S1T2  
LST67B-S1T2  
LST67B-T1U1  
1
2
1
2
1
2
1
2
1
2
1
2
56  
VLMS33S1U1  
P
Q
R
S
T
56  
71  
71  
90  
90  
112  
140  
180  
224  
280  
355  
450  
560  
710  
112  
140  
180  
224  
280  
355  
450  
560  
U
Note:  
Luminous intensity is tested at a current pulse duration of 25 ms and  
an accuracy of 11 %.  
The above type Numbers represent the order groups which include  
only a few brightness groups. Only one group will be shipped on  
each reel (there will be no mixing of two groups on each reel).  
In order to ensure availability, single brightness groups will not be  
orderable.  
In a similar manner for colors where wavelength groups are  
measured and binned, single wavelength groups will be shipped on  
any one reel.  
In order to ensure availability, single wavelength groups will not be  
orderable.  
www.vishay.com  
4
Document Number 81336  
Rev. 1.0, 04-May-07  
VLM.33..  
Vishay Semiconductors  
TYPICAL CHARACTERISTICS  
T
= 25 °C, unless otherwise specified  
amb  
100  
90  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
yellow  
80  
soft orange  
amber  
super red  
70  
RthJA = 400 K/W  
60  
50  
40  
30  
20  
10  
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5  
10  
25  
50  
75  
100  
125  
20144  
VF - Forward Voltage (V)  
16784  
Tamb - Ambient Temperature (°C)  
Figure 1. Forward Current vs. Ambient Temperature  
Figure 4. Forward Current vs. Forward Voltage  
0.12  
0.10  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
amber  
0.08  
tP/T = 0.005  
0.05  
0.5  
0.06  
0.04  
0.02  
0.00  
10-5 10-4 10-3 10-2 10-1 100 101 102  
570 580 590 600 610 620 630 640 650 660 670  
λ - Wavelength (nm)  
17044  
tP - Pulse Length (s)  
20196  
Figure 2. Forward Current vs. Pulse Length  
Figure 5. Relative Intensity vs. Wavelength  
0°  
10°  
20°  
10  
30°  
40°  
super red  
amber  
yellow  
soft orange  
1
1.0  
0.9  
50°  
60°  
0.8  
0.1  
70°  
0.7  
80°  
0.01  
1
10  
100  
0.6  
0.6  
0.4  
0.2  
0
0.2  
0.4  
95 10319  
20143  
IF - Forward Current (mA)  
Figure 3. Rel. Luminous Intensity vs. Angular Displacement  
Figure 6. Relative Luminous Intensity vs. Forward Current  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
5
VLM.33..  
Vishay Semiconductors  
2.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
super red  
amber  
2.0  
1.5  
1.0  
0.5  
0.0  
600 610 620 630 640 650 660 670 680 690 700  
- 50 - 25  
0
25  
50  
75  
100  
20197  
Tamb - Ambient Temperature (°C)  
20198  
λ - Wavelength (nm)  
Figure 7. Relative Luminous Intensity vs. Amb. Temperature  
Figure 10. Relative Intensity vs. Wavelength  
2.5  
6
amber  
super red  
4
2.0  
2
0
1.5  
1.0  
0.5  
0.0  
- 2  
- 4  
- 6  
- 50 - 25  
0
25  
50  
75  
100  
- 50 - 25  
0
25  
50  
75  
100  
20201  
Tamb - Ambient Temperature (°C)  
Tamb - Ambient Temperature (°C)  
20199  
Figure 8. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 11. Relative Luminous Intensity vs. Amb. Temperature  
250  
200  
1.5  
super red  
1.0  
50 mA  
amber  
150  
100  
50  
0.5  
0.0  
30 mA  
0
10 mA  
- 50  
- 100  
- 150  
- 200  
- 0.5  
- 1.0  
- 1.5  
10 20 30 40 50 60 70 80 90 100  
- 50 - 25  
0
25  
50  
75  
100  
IF - Forward Current (mA)  
20200  
Tamb - Ambient Temperature (°C)  
20202  
Figure 9. Change of Forward Voltage vs. Ambient Temperature  
Figure 12. Change of Dominant Wavelength vs. Forward Current  
www.vishay.com  
6
Document Number 81336  
Rev. 1.0, 04-May-07  
VLM.33..  
Vishay Semiconductors  
3
2
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
super red  
soft orange  
1
0
- 1  
- 2  
- 3  
- 4  
- 5  
- 50 - 25  
0
25  
50  
75  
100  
- 50 - 25  
0
25  
50  
75  
100  
Tamb - Ambient Temperature (°C)  
17021  
Tamb - Ambient Temperature (°C)  
20203  
Figure 13. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 16. Relative Luminous Intensity vs. Amb. Temperature  
6
250  
200  
soft orange  
4
30 mA  
red  
150  
100  
50  
2
0
50 mA  
10 mA  
0
- 2  
- 4  
- 6  
- 50  
- 100  
- 150  
- 200  
- 50 - 25  
0
25  
50  
75  
100  
- 50 - 25  
0
25  
50  
75  
100  
17022  
T
amb  
- Ambient Temperature (°C)  
Tamb - Ambient Temperature (°C)  
17039  
Figure 14. Change of Forward Voltage vs. Ambient Temperature  
Figure 17. Change of Dominant Wavelength vs.  
Ambient Temperature  
1.2  
250  
50 mA  
200  
1.1  
soft orange  
1.0  
30 mA  
150  
0.9  
0.8  
100  
soft orange  
0.7  
50  
0.6  
10 mA  
0
0.5  
0.4  
- 50  
- 100  
- 150  
- 200  
0.3  
0.2  
0.1  
0.0  
560 570 580 590 600 610 620 630 640 650 660  
- 50 - 25  
0
25  
50  
75  
100  
16314  
17020  
T
amb - Ambient Temperature (°C)  
λ - Wavelength (nm)  
Figure 15. Relative Intensity vs. Wavelength  
Figure 18. Change of Forward Voltage vs. Ambient Temperature  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
7
VLM.33..  
Vishay Semiconductors  
1.2  
6
4
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
yellow  
yellow  
2
0
- 2  
- 4  
- 6  
540 550 560 570 580 590 600 610 620 630 640  
λ - Wavelength (nm)  
- 50 - 25  
0
25  
50  
75  
100  
16008  
Tamb - Ambient Temperature (°C)  
17017  
Figure 19. Relative Intensity vs. Wavelength  
Figure 21. Change of Dominant Wavelength vs.  
Ambient Temperature  
2.5  
250  
30 mA  
yellow  
200  
50 mA  
yellow  
2.0  
150  
100  
50  
1.5  
1.0  
0.5  
0.0  
10 mA  
0
- 50  
- 100  
- 150  
- 200  
- 50 - 25  
0
25  
50  
75  
100  
- 50 - 25  
0
25  
50  
75  
100  
Tamb - Ambient Temperature (°C)  
17015  
Tamb - Ambient Temperature (°C)  
17016  
Figure 20. Relative Luminous Intensity vs. Amb. Temperature  
Figure 22. Change of Forward Voltage vs. Ambient Temperature  
PACKAGE DIMENSIONS in millimeters  
Mounting Pad Layout  
1.2  
area covered with  
solder resist  
4
1.6 (1.9)  
20541_1  
www.vishay.com  
8
Document Number 81336  
Rev. 1.0, 04-May-07  
VLM.33..  
Vishay Semiconductors  
METHOD OF TAPING/POLARITY AND TAPE AND REEL  
SMD LED (VLM3 - SERIES)  
REEL PACKAGE DIMENSION IN MM FOR  
SMD LEDS, TAPE OPTION GS08  
(= 1500 PCS.)  
Vishay’s LEDs in SMD packages are available in an  
antistatic 8 mm blister tape (in accordance with  
DIN IEC 40 (CO) 564) for automatic component  
insertion. The blister tape is a plastic strip with  
impressed component cavities, covered by a top tape.  
10.0  
9.0  
120°  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
63.5  
60.5  
Adhesive Tape  
Identification  
Label:  
Vishay  
Type  
Group  
Blister Tape  
Tape Code  
Production  
Code  
14.4 max.  
180  
178  
Quantity  
94 8665  
Figure 24. Reel dimensions - GS08  
94 8670  
Component Cavity  
REEL PACKAGE DIMENSION IN MM FOR  
SMD LEDS, TAPE OPTION GS18  
(= 8000 PCS.) PREFERRED  
TAPING OF VLM.3..  
10.4  
8.4  
120°  
3.5  
3.1  
2.2  
2.0  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
5.75  
5.25  
62.5  
60.0  
4.0  
3.6  
Identification  
8.3  
7.7  
Label:  
Vishay  
3.6  
3.4  
Type  
Group  
1.85  
1.65  
Tape Code  
Production  
Code  
14.4 max.  
0.25  
1.6  
1.4  
4.1  
3.9  
4.1  
3.9  
321  
329  
Quantity  
18857  
2.05  
1.95  
94 8668  
Figure 25. Reel dimensions - GS18  
Figure 23. Tape dimensions in mm for PLCC-2  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
9
VLM.33..  
Vishay Semiconductors  
SOLDERING PROFILE  
BARCODE-PRODUCT-LABEL  
EXAMPLE:  
IR Reflow Soldering Profile for lead (Pb)-free soldering  
Preconditioning acc. to JEDEC Level 2a  
300  
250  
200  
150  
100  
50  
max. 260 °C  
245 °C  
255 °C  
240 °C  
217 °C  
106  
A
H
max. 30 s  
max. 100 s  
VISHAY  
max. 120 s  
37  
max. Ramp Down 6 °C/s  
max. Ramp Up 3 °C/s  
20195  
B
C
D
E
F
G
0
0
50  
100  
150  
200  
250  
300  
Time (s)  
max. 2 cycles allowed  
19885  
A) Type of component  
B) Manufacturing Plant  
C) SEL - Selection Code (Bin):  
Figure 26. Vishay Lead (Pb)-free Reflow Soldering Profile  
(acc. to J-STD-020C)  
e.g.: R2 = Code for Luminous Intensity Group  
= Code for Color Group  
3
948626-1  
Lead Temperature  
TTW Soldering (acc. to CECC00802)  
D Date Code year/week  
E) Day Code (e.g. 1: Monday)  
F) Batch No.  
300  
250  
5 s  
second  
235 °C...260 °C  
first wave  
full line: typical  
dotted line: process limits  
wave  
G) Total quantity  
H) Company Code  
200  
150  
100  
ca. 2 K/s  
ca. 200 K/s  
100 °C...130 °C  
ca. 5 K/s  
2 K/s  
forced cooling  
50  
0
0
100  
Time (s)  
250  
50  
150  
200  
Figure 27. Double wave soldering of opto devices (all packages)  
www.vishay.com  
10  
Document Number 81336  
Rev. 1.0, 04-May-07  
VLM.33..  
Vishay Semiconductors  
DRY PACKING  
L
E V E L  
The reel is packed in an anti-humidity bag to protect  
the devices from absorbing moisture during  
transportation and storage.  
CAUTION  
This bag contains  
MOISTURE SENSITIVE DEVICES  
2a  
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)  
2. After this bag is opened devices that will be subjected to infrared reflow,  
vapor-phase reflow, or equivalent processing (peak package body temp.  
260°C) must be:  
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or  
b) Stored at <10% RH.  
Aluminum bag  
3. Devices require baking before mounting if:  
a)  
b)  
Humidity Indicator Card is >10% when read at 23°C + 5°C or  
2a or 2b is not met.  
Label  
4. If baking is required, devices may be baked for:  
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)  
or  
or  
96 hours at 60 5oCand <5%RH  
24 hours at 100 5°C  
For all device containers  
Not suitable for reels or tubes  
Bag Seal Date: ______________________________  
(If blank, see bar code label)  
Reel  
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113  
19786  
15973  
Example of JESD22-A112 Level 2a label  
ESD PRECAUTION  
Proper storage and handling procedures should be  
followed to prevent ESD damage to the devices  
especially when they are removed from the Antistatic  
Shielding Bag. Electro-Static Sensitive Devices  
warning labels are on the packaging.  
FINAL PACKING  
The sealed reel is packed into a cardboard box. A  
secondary cardboard box is used for shipping  
purposes.  
VISHAY SEMICONDUCTORS STANDARD  
BAR-CODE LABELS  
RECOMMENDED METHOD OF STORAGE  
Dry box storage is recommended as soon as the  
aluminum bag has been opened to prevent moisture  
absorption. The following conditions should be  
observed, if dry boxes are not available:  
The Vishay Semiconductors standard bar-code labels  
are printed at final packing areas. The labels are on  
each packing unit and contain Vishay Semiconductors  
specific data.  
• Storage temperature 10 °C to 30 °C  
• Storage humidity 60 % RH max.  
After more than 672 hours under these conditions  
moisture content will be too high for reflow soldering.  
In case of moisture absorption, the devices will recover  
to the former condition by drying under the following  
condition:  
192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH  
(dry air/nitrogen) or  
96 hours at 60 °C + 5 °C and < 5 % RH for all device  
containers or  
24 hours at 100 °C + 5 °C not suitable for reel or tubes.  
An EIA JEDEC Standard JESD22-A112 Level 2a label  
is included on all dry bags.  
Document Number 81336  
Rev. 1.0, 04-May-07  
www.vishay.com  
11  
VLM.33..  
Vishay Semiconductors  
OZONE DEPLETING SUBSTANCES POLICY STATEMENT  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or  
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and  
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such  
unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
12  
Document Number 81336  
Rev. 1.0, 04-May-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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